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There are 14633 results for: content related to: CMOS Device and Process Technology

  1. Gate Dielectrics by Plasma Enhanced Chemical Vapor Deposition (PECVD)

    Organic Thin Film Transistor Integration: A Hybrid Approach

    Flora M. Li, Arokia Nathan, Yiliang Wu, Beng S. Ong, Pages: 101–145, 2011

    Published Online : 12 APR 2011, DOI: 10.1002/9783527634446.ch4

  2. High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 10, October 2014, Pages: 866–870, Chuan Yu Han, Wing Man Tang, Cheung Hoi Leung, Chi Ming Che and Pui To Lai

    Version of Record online : 28 JUL 2014, DOI: 10.1002/pssr.201409261

  3. Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications

    High-k Gate Dielectrics for CMOS Technology

    Fu-Chien Chiu, Somnath Mondal, Tung-Ming Pan, Pages: 111–184, 2012

    Published Online : 23 AUG 2012, DOI: 10.1002/9783527646340.ch5

  4. Transistor Application of Phenacene Molecules and Their Characteristics

    European Journal of Inorganic Chemistry

    Volume 2014, Issue 24, August 2014, Pages: 3806–3819, Yoshihiro Kubozono, Xuexia He, Shino Hamao, Kazuya Teranishi, Hidenori Goto, Ritsuko Eguchi, Takashi Kambe, Shin Gohda and Yasushi Nishihara

    Version of Record online : 22 JUL 2014, DOI: 10.1002/ejic.201402168

  5. High Tg Cyclic Olefin Copolymer Gate Dielectrics for N,N′-Ditridecyl Perylene Diimide Based Field-Effect Transistors: Improving Performance and Stability with Thermal Treatment

    Advanced Functional Materials

    Volume 20, Issue 16, August 23, 2010, Pages: 2611–2618, Jaeyoung Jang, Sooji Nam, Dae Sung Chung, Se Hyun Kim, Won Min Yun and Chan Eon Park

    Version of Record online : 1 JUL 2010, DOI: 10.1002/adfm.201000383

  6. Electric Field Effects in Functional Metal Oxides

    Functional Metal Oxides: New Science and Novel Applications

    Lily Mandal, Weinan Lin, James Lourembam, Satishchandra Ogale, Tom Wu, Pages: 419–442, 2013

    Published Online : 31 JUL 2013, DOI: 10.1002/9783527654864.ch15

  7. Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula

    Advanced Functional Materials

    Volume 23, Issue 6, February 11, 2013, Pages: 690–696, Hyun Ho Choi, Moon Sung Kang, Min Kim, Haena Kim, Jeong Ho Cho and Kilwon Cho

    Version of Record online : 14 SEP 2012, DOI: 10.1002/adfm.201201545

  8. High-mobility solution-processed zinc oxide thin films on silicon nitride

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 10, October 2014, Pages: 871–875, Mourad Benlamri, Kyle M. Bothe, Alex M. Ma, Gem Shoute, Amir Afshar, Himani Sharma, Arash Mohammadpour, Manisha Gupta, Kenneth C. Cadien, Ying Y. Tsui, Karthik Shankar and Douglas W. Barlage

    Version of Record online : 13 JUN 2014, DOI: 10.1002/pssr.201409155

  9. Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator

    Advanced Materials

    Volume 24, Issue 1, January 3, 2012, Pages: 88–93, Jinhua Li, Zhenhua Sun and Feng Yan

    Version of Record online : 24 NOV 2011, DOI: 10.1002/adma.201103542

  10. Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    T.W. Pi, T.D. Lin, W.H. Chang, Y.C. Chang, M. Hong and J. Kwo

    Published Online : 25 APR 2014, DOI: 10.1002/047134608X.W3226.pub2

  11. Control current stress technique for the investigation of gate dielectrics of MIS devices

    physica status solidi (c)

    Volume 12, Issue 3, March 2015, Pages: 299–303, Vladimir V. Andreev, Gennady G. Bondarenko, Vladimir M. Maslovsky, Alexander A. Stolyarov and Dmitry V. Andreev

    Version of Record online : 9 FEB 2015, DOI: 10.1002/pssc.201400119

  12. Flexible Low-Voltage Organic Complementary Circuits: Finding the Optimum Combination of Semiconductors and Monolayer Gate Dielectrics

    Advanced Materials

    Volume 27, Issue 2, January 14, 2015, Pages: 207–214, Ulrike Kraft, Mirsada Sejfić, Myeong Jin Kang, Kazuo Takimiya, Tarek Zaki, Florian Letzkus, Joachim N. Burghartz, Edwin Weber and Hagen Klauk

    Version of Record online : 20 OCT 2014, DOI: 10.1002/adma.201403481

  13. Gate Dielectrics and Surface Passivation Layers for Organic Field Effect Transistors

    Organic Electronics: Structural and Electronic Properties of OFETs

    T. Diekmann, U. Hilleringmann, Pages: 373–400, 2009

    Published Online : 7 JUL 2009, DOI: 10.1002/9783527627387.ch18

  14. Functional Organic Field-Effect Transistors

    Advanced Materials

    Volume 22, Issue 40, October 25, 2010, Pages: 4427–4447, Yunlong Guo, Gui Yu and Yunqi Liu

    Version of Record online : 17 SEP 2010, DOI: 10.1002/adma.201000740

  15. Beyond microelectronics: materials and technology for nano-scale CMOS devices

    physica status solidi (c)

    Volume 1, Issue S2, August 2004, Pages: S155–S162, D. A. Buchanan

    Version of Record online : 10 SEP 2004, DOI: 10.1002/pssc.200405135

  16. Organic Field-Effect Transistor Memory Devices Using Discrete Ferritin Nanoparticle-Based Gate Dielectrics

    Small

    Volume 9, Issue 22, November 25, 2013, Pages: 3784–3791, Beom Joon Kim, Yongmin Ko, Jeong Ho Cho and Jinhan Cho

    Version of Record online : 10 MAY 2013, DOI: 10.1002/smll.201300522

  17. Gate leakage currents model for FinFETs implemented in Verilog-A for electronic circuits design

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    Volume 27, Issue 5-6, September-December 2014, Pages: 846–862, Salvador I. Garduño, Joaquín Alvarado, Antonio Cerdeira, Magali Estrada, Valeriya Kilchytska and Denis Flandre

    Version of Record online : 7 MAR 2014, DOI: 10.1002/jnm.1988

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    Organic transistors in the new decade: Toward n-channel, printed, and stabilized devices

    Journal of Polymer Science Part B: Polymer Physics

    Volume 50, Issue 15, 1 August 2012, Pages: 1090–1120, Srinivas Kola, Jasmine Sinha and Howard E. Katz

    Version of Record online : 23 FEB 2012, DOI: 10.1002/polb.23054

  19. Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal–Oxide Dielectrics and Semiconductors

    Advanced Materials

    Volume 27, Issue 7, February 18, 2015, Pages: 1182–1188, Jeong-Wan Jo, Jaekyun Kim, Kyung-Tae Kim, Jin-Gu Kang, Myung-Gil Kim, Kwang-Ho Kim, Hyungduk Ko, Yong-Hoon Kim and Sung Kyu Park

    Version of Record online : 7 JAN 2015, DOI: 10.1002/adma.201404296

  20. Surface-Modified High-k Oxide Gate Dielectrics for Low-Voltage High-Performance Pentacene Thin-Film Transistors

    Advanced Functional Materials

    Volume 17, Issue 6, April, 2007, Pages: 958–962, C. S. Kim, S. J. Jo, S. W. Lee, W. J. Kim, H. K. Baik and S. J. Lee

    Version of Record online : 24 JAN 2007, DOI: 10.1002/adfm.200600747