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  1. Growth of Planar and Reduced-defect Density Nonpolar GaN Films by Hydride Vapor Phase Epitaxy

    Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

    Benjamin A. Haskell, Paul T. Fini, Shuji Nakamura, Pages: 31–51, 2008

    Published Online : 16 SEP 2008, DOI: 10.1002/9783527623150.ch2

  2. X-ray characterization of thick GaN layers grown by HVPE

    Crystal Research and Technology

    Volume 40, Issue 4-5, April 2005, Pages: 503–508, R. Korbutowicz, J. Kozłowski, E. Dumiszewska and J. Serafińczuk

    Article first published online : 15 MAR 2005, DOI: 10.1002/crat.200410375

  3. Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE

    physica status solidi (a)

    Volume 176, Issue 1, November 1999, Pages: 429–433, V. Wagner, O. Parillaud, H. J. Bühlmann and M. Ilegems

    Article first published online : 22 NOV 1999, DOI: 10.1002/(SICI)1521-396X(199911)176:1<429::AID-PSSA429>3.0.CO;2-A

  4. Nucleation of GaN on sapphire substrates at intermediate temperatures by Hydride Vapor Phase Epitaxy

    Crystal Research and Technology

    Volume 47, Issue 2, February 2012, Pages: 121–130, G. Lukin, C. Röder, E. Niederschlag, Y. Shashev, U. Mühle, O. Pätzold, J. Kortus, D. Rafaja and M. Stelter

    Article first published online : 31 JAN 2012, DOI: 10.1002/crat.201100461

  5. Epitaxial Lateral Overgrowth of GaN

    Nitride Semiconductors: Handbook on Materials and Devices

    Pierre Gibart, Bernard Beaumont, Philippe Vennéguès, Pages: 45–106, 2006

    Published Online : 7 JUN 2006, DOI: 10.1002/3527607641.ch2

  6. HVPE growth of GaN in the semipolar direction on planar Si(210)

    physica status solidi (c)

    Volume 10, Issue 3, March 2013, Pages: 433–436, Vasily Bessolov, Elena Konenkova, Mikhail Shcheglov, Shukrillo Sharofidinov, Sergey Kukushkin, Andrey Osipov and Vladimir Nikolaev

    Article first published online : 22 JAN 2013, DOI: 10.1002/pssc.201200566

  7. HVPE Growth of GaN on Porous SiC Substrates

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    M. Mynbaeva, D. Tsvetkov, K. Mynbaev, Pages: 171–211, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch7

  8. Crystallization of free standing bulk GaN by HVPE

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1453–1456, B. Łucznik, B. Pastuszka, I. Grzegory, M. Boćkowski, G. Kamler, J. Domagała, G. Nowak, P. Prystawko, S. Krukowski and S. Porowski

    Article first published online : 9 MAY 2006, DOI: 10.1002/pssc.200565126

  9. Influence of the GaN Seed Layer and Growth Parameters on Selective Epitaxy of GaN by HVPE

    physica status solidi (a)

    Volume 176, Issue 1, November 1999, Pages: 655–659, O. Parillaud, V. Wagner, H. J. Bühlmann and M. Ilegems

    Article first published online : 22 NOV 1999, DOI: 10.1002/(SICI)1521-396X(199911)176:1<655::AID-PSSA655>3.0.CO;2-6

  10. Bulk growth of gallium nitride: challenges and difficulties

    Crystal Research and Technology

    Volume 42, Issue 12, December 2007, Pages: 1162–1175, M. Bockowski

    Article first published online : 9 NOV 2007, DOI: 10.1002/crat.200711002

  11. Molybdenum as local growth inhibitor in ammonia based epitaxy processes

    physica status solidi (c)

    Volume 10, Issue 3, March 2013, Pages: 396–399, M. Klein and F. Scholz

    Article first published online : 11 JAN 2013, DOI: 10.1002/pssc.201200690

  12. Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy

    physica status solidi (b)

    Volume 241, Issue 12, October 2004, Pages: 2802–2805, Hwa-Mok Kim, Hosang Lee, Suk Il Kim, Sung Ryong Ryu, Tae Won Kang and Kwan Soo Chung

    Article first published online : 10 SEP 2004, DOI: 10.1002/pssb.200405043

  13. GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    J. Xie, Y. Fu, Ü. Özgür, H. Morkoç, Pages: 121–170, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch6

  14. Self-separated freestanding GaN grown on patterned substrate by Hydride Vapor Phase Epitaxy

    physica status solidi (c)

    Volume 4, Issue 7, June 2007, Pages: 2231–2235, Chih-Ming Lai, Wen Yu Liu, Jenq-Dar Tsay, Po Chun Liu, Yih-Der Guo, Hsin-Hsiung Huang, Yu Hsiang Chang and Jul Chin Yeh

    Article first published online : 1 JUN 2007, DOI: 10.1002/pssc.200674733

  15. Progress Toward Making Gallium Nitride Seed Crystals Using Hydride Vapor-Phase Epitaxy

    Journal of the American Ceramic Society

    Volume 85, Issue 1, January 2002, Pages: 49–54, Philip R. Tavernier and David R. Clarke

    Article first published online : 20 DEC 2004, DOI: 10.1111/j.1151-2916.2002.tb00037.x

  16. Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy

    physica status solidi (a)

    Volume 201, Issue 2, January 2004, Pages: 199–202, S. Juršėnas, S. Miasojedovas, G. Kurilčik, A. Žukauskas and P. R. Hageman

    Article first published online : 22 DEC 2003, DOI: 10.1002/pssa.200303909

  17. Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2110–2112, Takehiro Yoshida, Yuichi Oshima, Kazutoshi Watanabe, Tadayoshi Tsuchiya and Tomoyoshi Mishima

    Article first published online : 21 APR 2011, DOI: 10.1002/pssc.201000953

  18. Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy

    physica status solidi (c)

    Volume 4, Issue 1, January 2007, Pages: 133–136, K. S. Jang, K. H. Kim, S. L. Hwang, H. S. Jeon, H. S. Ahn, M. Yang, W. J. Choi, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee and M. Koike

    Article first published online : 8 JAN 2007, DOI: 10.1002/pssc.200673506

  19. Light Microscopy

    Polymorphism: in the Pharmaceutical Industry

    Rolf Hilfiker, Pages: 167–209, 2006

    Published Online : 22 MAY 2006, DOI: 10.1002/3527607889.ch7

  20. Fabrication of Freestanding GaN Wafers by Hydride Vapor-Phase Epitaxy with Void-Assisted Separation

    physica status solidi (a)

    Volume 194, Issue 2, December 2002, Pages: 554–558, Y. Oshima, T. Eri, M. Shibata, H. Sunakawa and A. Usui

    Article first published online : 10 DEC 2002, DOI: 10.1002/1521-396X(200212)194:2<554::AID-PSSA554>3.0.CO;2-B

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