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There are 43241 results for: content related to: Wireless Chemical Sensor for Combustion Species at High Temperatures Using 4H-SIC

  1. Mass Depopulation as an Effective Measure for Disease Control Purposes

    Avian Influenza

    Elizabeth A. Krushinskie, Martin Smeltzer, Patrice Klein, Harm Kiezenbrink, Pages: 309–332, 2009

    Published Online : 27 MAR 2009, DOI: 10.1002/9780813818634.ch14

  2. Shear stress-mediated F1/FO ATP synthase-dependent CO2 gas excretion from human pulmonary arteriolar endothelial cells

    Journal of Cellular Physiology

    Volume 227, Issue 5, May 2012, Pages: 2059–2068, Yoshiko Kawai, Kazuo Yoshida, Maki Kaidoh, Yumiko Yokoyama and Toshio Ohhashi

    Version of Record online : 23 JAN 2012, DOI: 10.1002/jcp.22937

  3. Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Tsunenobu Kimoto, Katsunori Danno, Jun Suda, Pages: 267–286, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch10

  4. CO2 Capture Using Monoethanolamine in a Bubble-Column Scrubber

    Chemical Engineering & Technology

    Volume 38, Issue 2, February, 2015, Pages: 274–282, Pao-Chi Chen, Yi Xin Luo and Pao Wein Cai

    Version of Record online : 12 DEC 2014, DOI: 10.1002/ceat.201400240

  5. Investigation of graphene–SiC interface by nanoscale electrical characterization

    physica status solidi (b)

    Volume 247, Issue 4, April 2010, Pages: 912–915, Sushant Sonde, Filippo Giannazzo, Vito Raineri and Emanuele Rimini

    Version of Record online : 28 DEC 2009, DOI: 10.1002/pssb.200982969

  6. 4H-SiC: a new nonlinear material for midinfrared lasers

    Laser & Photonics Reviews

    Volume 7, Issue 5, September 2013, Pages: 831–838, Shunchong Wang, Minjie Zhan, Gang Wang, Hongwen Xuan, Wei Zhang, Chunjun Liu, Chunhua Xu, Yu Liu, Zhiyi Wei and Xiaolong Chen

    Version of Record online : 19 JUL 2013, DOI: 10.1002/lpor.201300068

  7. 4H-SiC MISFETs with Nitrogen-Containing Insulators

    Silicon Carbide: Power Devices and Sensors, Volume 2

    Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto, Pages: 235–265, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629077.ch10

  8. Identification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Michel Bockstedte, Adam Gali, Alexander Mattausch, Oleg Pankratov, John W. Steeds, Pages: 115–145, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch5

  9. Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1327–1336, Tsunenobu Kimoto, Katsunori Danno and Jun Suda

    Version of Record online : 2 JUN 2008, DOI: 10.1002/pssb.200844076

  10. The length of discontinuous gas exchange cycles in lepidopteran pupae may serve as a mechanism for natural selection

    Physiological Entomology

    Volume 39, Issue 4, December 2014, Pages: 322–330, Katrin Jõgar, Aare Kuusik, Luule Metspalu, Ingrid H. Williams, Angela Ploomi, Külli Hiiesaar, Anne Luik, Irja Kivimägi and Marika Mänd

    Version of Record online : 8 OCT 2014, DOI: 10.1111/phen.12078

  11. Regional-scale advective, diffusive, and eruptive dynamics of CO2 and brine leakage through faults and wellbores

    Journal of Geophysical Research: Solid Earth

    Volume 120, Issue 5, May 2015, Pages: 3003–3025, Na-Hyun Jung, Weon Shik Han, Kyungdoe Han and Eungyu Park

    Version of Record online : 12 MAY 2015, DOI: 10.1002/2014JB011722

  12. Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl, Pages: 341–362, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch13

  13. Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems

    physica status solidi (b)

    Volume 246, Issue 7, July 2009, Pages: 1569–1579, Ulrich Starke

    Version of Record online : 17 JUN 2009, DOI: 10.1002/pssb.200945170

  14. Progress of semiconductor silicon carbide (SiC)

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 81, Issue 7, July 1998, Pages: 38–44, Hiroyuki Matsunami

    Version of Record online : 7 DEC 1998, DOI: 10.1002/(SICI)1520-6432(199807)81:7<38::AID-ECJB5>3.0.CO;2-Z

  15. CVD Growth of 3C-SiC on 4H/6H Mesas

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 531–540, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang and M. Dudley

    Version of Record online : 21 AUG 2006, DOI: 10.1002/cvde.200506460

  16. Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 389–408, A. Itoh and H. Matsunami

    Version of Record online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<389::AID-PSSA389>3.0.CO;2-X

  17. Effect of H2O2 in passivation of n- and p-type 4H-SiC surfaces

    physica status solidi (a)

    Volume 209, Issue 4, April 2012, Pages: 675–678, Rodrigo Palmieri, Cláudio Radtke, Henri Boudinov and Eronides F. da Silva Jr

    Version of Record online : 15 FEB 2012, DOI: 10.1002/pssa.201100589

  18. Formation of Extended Defects in 4H-SiC Epitaxial Growth and Development of a Fast Growth Technique

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano, Pages: 63–94, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch3

  19. Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique

    physica status solidi (b)

    Volume 246, Issue 7, July 2009, Pages: 1553–1568, Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata and Masahiro Nagano

    Version of Record online : 16 JUN 2009, DOI: 10.1002/pssb.200945056

  20. Molecular-beam epitaxy of AlN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2643–2646, N. Onojima, J. Kaido, J. Suda and T. Kimoto

    Version of Record online : 15 MAR 2005, DOI: 10.1002/pssc.200461526