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There are 8436 results for: content related to: Compound Semiconductor Device Structures

  1. Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits

    Advanced Materials

    Volume 22, Issue 47, December 14, 2010, Pages: 5332–5349, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern, Michael Lorenz, Friedrich Schein, Zhipeng Zhang and Marius Grundmann

    Version of Record online : 27 SEP 2010, DOI: 10.1002/adma.201001375

  2. Zum Einfluß des Oberflächenpotentials auf die Frequenzdispersion der Admittanz von GaAs-MIS-Teststrukturen sowie der Gatekapazität und Steilheit von MESFETs II. Untersuchungen an MESFETs

    physica status solidi (a)

    Volume 121, Issue 1, 16 September 1990, Pages: 315–325, G. Kaden

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211210138

  3. Metal–GaAs interaction and contact degradation in microwave MESFETs

    Quality and Reliability Engineering International

    Volume 6, Issue 1, January/March 1990, Pages: 29–46, Enrico Zanoni, Alessandro Callegari, Claudio Canali, Fausto Fantini, Hans L. Hartnagel, Fabrizio Magistrali, Alessandro Paccagnella and Massimo Vanzi

    Version of Record online : 20 MAR 2007, DOI: 10.1002/qre.4680060108

  4. Active Devices

    Microwave Circuit Design Using Linear and Nonlinear Techniques, Second Edition

    George D. Vendelin, Anthony M. Pavio, Ulrich L. Rohde, Pages: 51–191, 2005

    Published Online : 27 JAN 2005, DOI: 10.1002/0471715832.ch3

  5. Development of high-frequency SiC-MESFETs

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 86, Issue 11, November 2003, Pages: 1–10, Manabu Arai, Hirotake Honda, Shuichi Ono, Hiroshi Sawazaki and Makoto Ogata

    Version of Record online : 14 OCT 2003, DOI: 10.1002/ecjb.10160

  6. Light interaction with GaAs mesfet and its applications— a review (invited paper)

    Microwave and Optical Technology Letters

    Volume 6, Issue 1, January 1993, Pages: 22–27, A. Madjar, A. Paollela and P. R. Herczfeld

    Version of Record online : 22 JAN 2007, DOI: 10.1002/mop.4650060107

  7. MESFET models for microwave CAD applications

    International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering

    Volume 1, Issue 2, 1991, Pages: 143–158, R. J. Trew

    Version of Record online : 8 MAR 2007, DOI: 10.1002/mmce.4570010204

  8. RF Devices: Characteristics and Modelling

    Microwave Devices, Circuits and Subsystems for Communications Engineering

    A. Suarez, T. Fernandez, Pages: 9–89, 2006

    Published Online : 5 MAY 2006, DOI: 10.1002/0470012757.ch2

  9. JFETs, MESFETs, and MODFETs

    Physics of Semiconductor Devices

    S.M. Sze, Kwok K. Ng, Pages: 374–413, 2006

    Published Online : 10 APR 2006, DOI: 10.1002/9780470068328.ch7

  10. Optimum Design and Circuit Technique

    RF and Microwave Transistor Oscillator Design

    Andrei Grebennikov, Pages: 127–185, 2007

    Published Online : 11 MAY 2007, DOI: 10.1002/9780470512098.ch4

  11. A new dual-material (DM) gate design to improve the subthreshold behavior of deep submicron GaN-MESFETs

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 1109–1113, Nacereddine Lakhdar, Fayçal Djeffal and Zohir Dibi

    Version of Record online : 14 FEB 2012, DOI: 10.1002/pssc.201100071

  12. Comparing the MESFET and HEMT models for efficient circuit design

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    Volume 20, Issue 3, May/June 2007, Pages: 149–161, R. Touhami, M. C. E. Yagoub and H. Baudrand

    Version of Record online : 12 MAR 2007, DOI: 10.1002/jnm.641

  13. Power Amplifier Fundamentals

    High Efficiency RF and Microwave Solid State Power Amplifiers

    Paolo Colantonio, Franco Giannini, Ernesto Limiti, Pages: 1–47, 2009

    Published Online : 3 SEP 2009, DOI: 10.1002/9780470746547.ch1

  14. Experimental and Simulated Results of SiC Microwave Power MESFETs

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 409–419, R. J. Trew

    Version of Record online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<409::AID-PSSA409>3.0.CO;2-O

  15. Accurate large-signal GaAs MESFET and HEMT modeling for power MMIC amplifier design

    International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering

    Volume 5, Issue 3, May 1995, Pages: 195–209, Jean-Marc Dortu, Jan-Erik Müller, Marco Pirola and Giovanni Ghione

    Version of Record online : 9 MAR 2007, DOI: 10.1002/mmce.4570050307

  16. Compound Semiconductor Device Structures

    Handbook of Semiconductor Technology: Processing of Semiconductors, Volume 2

    William E. Stanchina, Juan E Lam, Pages: 391–406, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621828.ch8

  17. Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    Volume 14, Issue 1, January/February 2001, Pages: 1–14, Agostino Giorgio and Anna Gina Perri

    Version of Record online : 15 JAN 2001, DOI: 10.1002/1099-1204(200101/02)14:1<1::AID-JNM392>3.0.CO;2-2

  18. On the analysis of microwave MESFET mixers

    Microwave and Optical Technology Letters

    Volume 4, Issue 8, July 1991, Pages: 307–311, Cam Nguyen and Chistos Christodoulou

    Version of Record online : 22 JAN 2007, DOI: 10.1002/mop.4650040809

  19. Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector

    Microwave and Optical Technology Letters

    Volume 26, Issue 4, 20 August 2000, Pages: 247–254, M. Madheswaran, V. Rajamani and P. Chakrabarti

    Version of Record online : 27 JUN 2000, DOI: 10.1002/1098-2760(20000820)26:4<247::AID-MOP13>3.0.CO;2-6

  20. Nonlinear Models

    Nonlinear Microwave Circuit Design

    F. Giannini, G. Leuzzi, Pages: 83–157, 2005

    Published Online : 28 JAN 2005, DOI: 10.1002/0470020709.ch3