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There are 35885 results for: content related to: MOVPE of III–V Compounds

  1. Metalorganic Precursors for Chemical Beam Epitaxy

    CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

    Anthony C. Jones, Paul O'Brien, Pages: 229–272, 2008

    Published Online : 7 OCT 2008, DOI: 10.1002/9783527614639.ch5

  2. The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiy Films

    Chemical Vapor Deposition

    Volume 21, Issue 7-8-9, September 2015, Pages: 166–175, Kamran Forghani, Yingxin Guan, Adam Wood, Susan Babock, Luke Mawst and Thomas F. Kuech

    Version of Record online : 27 APR 2015, DOI: 10.1002/cvde.201507160

  3. Growth of GaAs and Al GaAs by chemical beam epitaxy—precursor requirements and recent developments

    Advanced Materials

    Volume 5, Issue 2, February 1993, Pages: 81–87, Dr. Anthony C. Jones

    Version of Record online : 29 OCT 2004, DOI: 10.1002/adma.19930050203

  4. Precursor Chemistry

    CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

    Anthony C. Jones, Paul O'Brien, Pages: 43–98, 2008

    Published Online : 7 OCT 2008, DOI: 10.1002/9783527614639.ch2

  5. Epitaxial Growth

    Handbook of Semiconductor Technology Set

    Thomas E Kuech, Michael A. Tischler, Pages: 111–176, 2008

    Published Online : 4 JUN 2008, DOI: 10.1002/9783527619290.ch3a

  6. Epitaxial Growth

    Handbook of Semiconductor Technology: Processing of Semiconductors, Volume 2

    Thomas E Kuech, Michael A. Tischler, Pages: 111–176, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621828.ch3

  7. Atomic Layer Epitaxy

    CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

    Anthony C. Jones, Paul O'Brien, Pages: 273–286, 2008

    Published Online : 7 OCT 2008, DOI: 10.1002/9783527614639.ch6

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    Index

    CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

    Anthony C. Jones, Paul O'Brien, Pages: 329–338, 2008

    Published Online : 7 OCT 2008, DOI: 10.1002/9783527614639.index

  9. Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods

    Wide Band Gap Semiconductor Nanowires 1

    Vincent Consonni, Guy Feuillet, Pages: 245–264, 2014

    Published Online : 8 AUG 2014, DOI: 10.1002/9781118984321.ch10

  10. X-Ray Investigations of the intrinsic Carbon-Incorporation during the MOVPE Growth of AlxGa1-xAs

    Zeitschrift für anorganische und allgemeine Chemie

    Volume 630, Issue 10, August 2004, Pages: 1419–1422, Volker Gottschalch, G. Leibiger and D. Spemann

    Version of Record online : 17 AUG 2004, DOI: 10.1002/zaac.200400129

  11. Control of Embryo-borne Pathogens

    Bovine Reproduction

    Richard M. Hopper, Pages: 749–757, 2014

    Published Online : 22 AUG 2014, DOI: 10.1002/9781118833971.ch80

  12. Organometallic molecular precursors for low-temperature MOCVD of III–V semiconductors

    Advanced Materials

    Volume 3, Issue 11, November 1991, Pages: 542–548, Dr. Francis Maury

    Version of Record online : 15 SEP 2004, DOI: 10.1002/adma.19910031104

  13. III–V and Related Semiconductor Materials

    The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities

    Mohammad Azad Malik, Paul O'Brien, Pages: 612–653, 2011

    Published Online : 30 MAR 2011, DOI: 10.1002/9780470976548.ch10

  14. MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

    Crystal Research and Technology

    Volume 32, Issue 1, 1997, Pages: 69–82, Dr. V. Gottschalch, Dr. R. Franzheld, Dipl. Krist. I. Pietzonka, Dr. R. Schwabe, Dipl. Phys. G. Benndorf and Dr. G. Wagner

    Version of Record online : 19 FEB 2006, DOI: 10.1002/crat.2170320107

  15. Basic Concepts

    CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

    Anthony C. Jones, Paul O'Brien, Pages: 1–42, 2008

    Published Online : 7 OCT 2008, DOI: 10.1002/9783527614639.ch1

  16. Epitaxial Lateral Overgrowth of GaN

    physica status solidi (b)

    Volume 227, Issue 1, September 2001, Pages: 1–43, B. Beaumont, Ph. Vennéguès and P. Gibart

    Version of Record online : 5 SEP 2001, DOI: 10.1002/1521-3951(200109)227:1<1::AID-PSSB1>3.0.CO;2-Q

  17. MOVPE of InP Using Trimethylindium – Trimethylamine Adduct

    Crystal Research and Technology

    Volume 26, Issue 3, 1991, Pages: 253–261, B. P. Keller, G. Oelgart, R. Pickenhain, G. Grummt and Dozent Dr. sc. W. Seifert

    Version of Record online : 19 FEB 2006, DOI: 10.1002/crat.2170260302

  18. Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 6, June 2013, Pages: 443–446, Róbert Kúdela, Ján Šoltýs, Andrej Vincze and Jozef Novák

    Version of Record online : 24 APR 2013, DOI: 10.1002/pssr.201307116

  19. MOVPE of II–VI Compounds

    CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

    Anthony C. Jones, Paul O'Brien, Pages: 187–228, 2008

    Published Online : 7 OCT 2008, DOI: 10.1002/9783527614639.ch4

  20. Metal organic chemical vapor deposition (MOCVD) perspectives and prospects

    Advanced Materials

    Volume 1, Issue 8-9, 1989, Pages: 282–292, Prof. John O. Williams

    Version of Record online : 15 SEP 2004, DOI: 10.1002/adma.19890010807