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There are 77078 results for: content related to: The Single Source Approach to the Deposition of Compound Semiconducting Materials by MOCVD and Related Methods

  1. The single-molecule approach to the deposition of compound semiconducting materials by MOCVD and related methods

    Advanced Materials for Optics and Electronics

    Volume 5, Issue 2, March/April 1995, Pages: 117–134, Paul O'Brient and Stephen Haggata

    Version of Record online : 14 SEP 2004, DOI: 10.1002/amo.860050208

  2. Supramolecular Self-Assembly by Dative Bonding (Electron-Pair Donor-Acceptor or Lewis Acid-Base Interactions)

    Supramolecular Organometallic Chemistry

    Ionel Haiduc, Frank T. Edelmann, Pages: 95–194, 2007

    Published Online : 18 DEC 2007, DOI: 10.1002/9783527613540.ch03

  3. MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

    Chemical Vapor Deposition

    Volume 6, Issue 4, August, 2000, Pages: 155–173, A. N. Gleizes

    Version of Record online : 28 JUL 2000, DOI: 10.1002/1521-3862(200008)6:4<155::AID-CVDE155>3.0.CO;2-Y

  4. Metal Chalcogenide Materials: Chalcogenolato complexes as “single-source” precursors

    Chemical Vapor Deposition

    Volume 2, Issue 3, May 1996, Pages: 85–96, Prof. Manfred Bochmann

    Version of Record online : 4 OCT 2004, DOI: 10.1002/cvde.19960020302

  5. Synthesis and characterization of polyether adducts of group 2 metal thioacetates: Single-source precursors to binary metal sulfide films, MS, where M [DOUBLE BOND] Ca, Sr, Ba

    Chemical Vapor Deposition

    Volume 2, Issue 3, May 1996, Pages: 105–108, Dr. Klaus Kunze, Dr. Laurent Bihry, Dr. Paolina Atanasova, Prof. Mark J. Hampden-Smith and Dr. Eileen N. Duesler

    Version of Record online : 4 OCT 2004, DOI: 10.1002/cvde.19960020304

  6. MOVPE of III–V Compounds

    CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications

    Anthony C. Jones, Paul O'Brien, Pages: 99–186, 2008

    Published Online : 7 OCT 2008, DOI: 10.1002/9783527614639.ch3

  7. Single-Source III/V Precursors: A New Approach to Gallium Arsenide and Related Semiconductors

    Angewandte Chemie International Edition in English

    Volume 28, Issue 9, September 1989, Pages: 1208–1215, Prof. Alan H. Cowley and Prof. Richard A. Jones

    Version of Record online : 30 DEC 2003, DOI: 10.1002/anie.198912081

  8. Alternative precursor systems for the MOCVD of aluminium nitride and gallium nitride

    Advanced Materials for Optics and Electronics

    Volume 6, Issue 3, May 1996, Pages: 119–126, Simon A. Rushworth, Juliette R. Brown, David J. Houlton, Anthony C. Jones, Victoria Roberts, John S. Roberts and Gary W. Critchlow

    Version of Record online : 4 DEC 1998, DOI: 10.1002/(SICI)1099-0712(199605)6:3<119::AID-AMO229>3.0.CO;2-7

  9. Niedermolekulare III/V-Komplexe, ein möglicher neuer Weg zu Galliumarsenid und verwandten Halbleitern

    Angewandte Chemie

    Volume 101, Issue 9, September 1989, Pages: 1235–1243, Prof. Alan H. Cowley and Prof. Richard A. Jones

    Version of Record online : 13 JAN 2006, DOI: 10.1002/ange.19891010908

  10. Phosphinochalcogenoic amidato complexes of zinc and cadmium as novel single-source precursors for the deposition of metal selenide and telluride films

    Chemical Vapor Deposition

    Volume 1, Issue 3, November 1995, Pages: 78–80, Gabriel C. Bwembya, Dr. Xuejing Song and Prof. Manfred Bochmann

    Version of Record online : 14 SEP 2004, DOI: 10.1002/cvde.19950010304

  11. The Chemistry of Metal Complexes with Selenolate and Tellurolate Ligands

    Progress in Inorganic Chemistry, Volume 43

    Kenneth D. Karlin, Pages: 353–417, 2007

    Published Online : 9 MAR 2007, DOI: 10.1002/9780470166444.ch4

  12. Arsenic: Organoarsenic Chemistry

    Standard Article

    Encyclopedia of Inorganic and Bioinorganic Chemistry

    Larry K. Krannich and Charles L. Watkins

    Published Online : 15 DEC 2011, DOI: 10.1002/9781119951438.eibc0014

  13. Low temperature, aerosol-assisted chemical vapor deposition (AACVD) of CdS, ZnS, and Cd1-xZnxS using monomeric single-source precursors: M(SOCCH3)2 TMEDA

    Chemical Vapor Deposition

    Volume 2, Issue 5, September 1996, Pages: 171–174, Dr. May Nyman, Prof. Mark J. Hampden-Smith and Dr. Eileen N. Duesler

    Version of Record online : 4 OCT 2004, DOI: 10.1002/cvde.19960020503

  14. Investigation of the state of strain and of the electrical properties of A1N layers on monocrystalline Si

    physica status solidi (a)

    Volume 90, Issue 1, 16 July 1985, Pages: 135–141, U. Rensch and G. Eichhorn

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210900111

  15. By Reaction with Selenium or Tellurium Compounds in Metal-Organic Chemical Vapor Deposition (Mocvd) and Related Reactions

    Inorganic Reactions and Methods: Formation of Bonds to O, S, Se, Te, Po (Part 2), Volume 6

    J. J. Zuckerman, A. D. Norman, Pages: 50–53, 2007

    Published Online : 29 MAY 2007, DOI: 10.1002/9780470145203.ch47

  16. Development of Mo metallization process of AIN ceramic surfaces

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 72, Issue 9, 1989, Pages: 86–95, Masaaki Takahashi, Kazuji Yamada, Takahiko Oukouchi, Kiyoshi Kanai and Koichiro Kurihara

    Version of Record online : 21 MAR 2007, DOI: 10.1002/ecjb.4420720910

  17. Phase Equilibria and Phase Transformation in the Aluminum Nitride-Aluminum Oxycarbide Pseudobinary System

    Journal of the American Ceramic Society

    Volume 72, Issue 4, April 1989, Pages: 540–550, Shih-Yee Kuo and Anil V. Virkar

    Version of Record online : 8 MAR 2005, DOI: 10.1111/j.1151-2916.1989.tb06173.x

  18. Lead(II) dithiocarbamato complexes as precursors for the LP-MOCVD of lead sulfide

    Chemical Vapor Deposition

    Volume 3, Issue 2, March 1997, Pages: 75–77, Dr. Tito Trindade and Prof. Paul O' Brien

    Version of Record online : 2 NOV 2004, DOI: 10.1002/cvde.19970030203

  19. Preparation of AIN Whiskers and Applications to Composite Materials

    High Temperature Ceramic Matrix Composites

    N. Hotta, T. Watanabe, T. Sasamoto, C. Zhang, T. Meguro, K. Komeya, Pages: 375–380, 2006

    Published Online : 13 JAN 2006, DOI: 10.1002/3527605622.ch60

  20. Preparation of Liquid-Phase Sintered Multilayer Composites of SiC and AlN

    High Temperature Ceramic Matrix Composites

    S. Wildhack, G. Rixecker, F. Aldinger, Pages: 401–406, 2006

    Published Online : 13 JAN 2006, DOI: 10.1002/3527605622.ch64