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There are 9429 results for: content related to: Resistive Switching in Bulk Silver Nanowire–Polystyrene Composites

  1. Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1–δFeO3 Interfaces

    Advanced Functional Materials

    Volume 22, Issue 5, March 7, 2012, Pages: 1040–1047, Atsushi Tsurumaki, Hiroyuki Yamada and Akihito Sawa

    Version of Record online : 18 JAN 2012, DOI: 10.1002/adfm.201102883

  2. Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

    Advanced Materials

    Volume 21, Issue 25-26, July 13, 2009, Pages: 2632–2663, Rainer Waser, Regina Dittmann, Georgi Staikov and Kristof Szot

    Version of Record online : 6 JUL 2009, DOI: 10.1002/adma.200900375

  3. Resistive Switching in Mott Insulators and Correlated Systems

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6287–6305, Etienne Janod, Julien Tranchant, Benoit Corraze, Madec Querré, Pablo Stoliar, Marcelo Rozenberg, Tristan Cren, Dimitri Roditchev, Vinh Ta Phuoc, Marie-Paule Besland and Laurent Cario

    Version of Record online : 14 JUL 2015, DOI: 10.1002/adfm.201500823

  4. Improvement of resistive switching fluctuations by using one step lift-off process

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 10, October 2015, Pages: 594–596, Yingtao Li, Xiaoping Gao, Liping Fu, Peng Yuan, Hong Wang and Chunlan Tao

    Version of Record online : 24 SEP 2015, DOI: 10.1002/pssr.201510286

  5. How Does Moisture Affect the Physical Property of Memristance for Anionic–Electronic Resistive Switching Memories?

    Advanced Functional Materials

    Volume 25, Issue 32, August 26, 2015, Pages: 5117–5125, Felix Messerschmitt, Markus Kubicek and Jennifer L. M. Rupp

    Version of Record online : 14 JUL 2015, DOI: 10.1002/adfm.201501517

  6. Physics of the Switching Kinetics in Resistive Memories

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6306–6325, Stephan Menzel, Ulrich Böttger, Martin Wimmer and Martin Salinga

    Version of Record online : 18 JUN 2015, DOI: 10.1002/adfm.201500825

  7. Resistive switching characteristics of TiN/MnO2/Pt memory devices

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 8-9, September 2010, Pages: 233–235, Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko and Jeon-kook Lee

    Version of Record online : 21 JUL 2010, DOI: 10.1002/pssr.201004213

  8. Aging Effect of the Resistive Switching in ZnO Thin Film

    physica status solidi (b)

    N. Kambhala and S. Angappane

    Version of Record online : 21 AUG 2017, DOI: 10.1002/pssb.201700208

  9. Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 7, July 2013, Pages: 493–496, Soyun Park, Jae Hyuk Lee, Hee-Dong Kim, Seok Man Hong, Ho-Myoung An and Tae Geun Kim

    Version of Record online : 14 JUN 2013, DOI: 10.1002/pssr.201307187

  10. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

    Advanced Materials

    Volume 29, Issue 24, June 27, 2017, Weiming Lü, Changjian Li, Limei Zheng, Juanxiu Xiao, Weinan Lin, Qiang Li, Xiao Renshaw Wang, Zhen Huang, Shengwei Zeng, Kun Han, Wenxiong Zhou, Kaiyang Zeng, Jingsheng Chen, Ariando, Wenwu Cao and Thirumalai Venkatesan

    Version of Record online : 25 APR 2017, DOI: 10.1002/adma.201606165

  11. Nanoionics-Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

    Advanced Electronic Materials

    Volume 3, Issue 7, July 2017, Zhiyong Wang, Laiyuan Wang, Masaru Nagai, Linghai Xie, Mingdong Yi and Wei Huang

    Version of Record online : 12 MAY 2017, DOI: 10.1002/aelm.201600510

  12. Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

    Advanced Materials

    Volume 28, Issue 31, August 17, 2016, Pages: 6562–6567, Jaeho Choi, Sunghak Park, Joohee Lee, Kootak Hong, Do-Hong Kim, Cheon Woo Moon, Gyeong Do Park, Junmin Suh, Jinyeon Hwang, Soo Young Kim, Hyun Suk Jung, Nam-Gyu Park, Seungwu Han, Ki Tae Nam and Ho Won Jang

    Version of Record online : 18 MAY 2016, DOI: 10.1002/adma.201600859

  13. Resistive Switching Memory Devices Based on Proteins

    Advanced Materials

    Volume 27, Issue 46, December 9, 2015, Pages: 7670–7676, Hong Wang, Fanben Meng, Bowen Zhu, Wan Ru Leow, Yaqing Liu and Xiaodong Chen

    Version of Record online : 5 MAR 2015, DOI: 10.1002/adma.201405728

  14. Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

    Advanced Functional Materials

    Volume 22, Issue 4, February 22, 2012, Pages: 709–716, Yoon Cheol Bae, Ah Rahm Lee, Ja Bin Lee, Ja Hyun Koo, Kyung Cheol Kwon, Jea Gun Park, Hyun Sik Im and Jin Pyo Hong

    Version of Record online : 21 DEC 2011, DOI: 10.1002/adfm.201102362

  15. Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories

    Small

    Volume 8, Issue 8, April 23, 2012, Pages: 1279–1284, Zhong-tang Xu, Kui-juan Jin, Lin Gu, Yu-ling Jin, Chen Ge, Can Wang, Hai-zhong Guo, Hui-bin Lu, Rui-qiang Zhao and Guo-zhen Yang

    Version of Record online : 20 FEB 2012, DOI: 10.1002/smll.201101796

  16. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

    Advanced Functional Materials

    Volume 21, Issue 15, August 9, 2011, Pages: 2806–2829, Byungjin Cho, Sunghun Song, Yongsung Ji, Tae-Wook Kim and Takhee Lee

    Version of Record online : 8 JUL 2011, DOI: 10.1002/adfm.201100686

    Corrected by:

    Correction: Correction: Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

    Vol. 21, Issue 18, 3406, Version of Record online: 20 SEP 2011

  17. A Versatile Light-Switchable Nanorod Memory: Wurtzite ZnO on Perovskite SrTiO3

    Advanced Functional Materials

    Volume 23, Issue 39, October 18, 2013, Pages: 4977–4984, Ashok Bera, Haiyang Peng, James Lourembam, Youde Shen, Xiao Wei Sun and T. Wu

    Version of Record online : 25 APR 2013, DOI: 10.1002/adfm.201300509

  18. Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes

    Advanced Functional Materials

    Volume 25, Issue 35, September 16, 2015, Pages: 5586–5592, Niloufar Raeis Hosseini and Jang-Sik Lee

    Version of Record online : 14 AUG 2015, DOI: 10.1002/adfm.201502592

  19. Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

    Advanced Materials

    Volume 22, Issue 43, November 16, 2010, Pages: 4819–4822, Ruth Muenstermann, Tobias Menke, Regina Dittmann and Rainer Waser

    Version of Record online : 27 AUG 2010, DOI: 10.1002/adma.201001872

  20. Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6414–6423, Anne Siemon, Thomas Breuer, Nabeel Aslam, Sebastian Ferch, Wonjoo Kim, Jan van den Hurk, Vikas Rana, Susanne Hoffmann-Eifert, Rainer Waser, Stephan Menzel and Eike Linn

    Version of Record online : 18 JUN 2015, DOI: 10.1002/adfm.201500865