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There are 11884 results for: content related to: Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials’ Physical Properties

  1. Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures

    Advanced Materials

    Volume 23, Issue 24, June 24, 2011, Pages: 2706–2710, Rinaldo Trotta, Antonio Polimeni, Faustino Martelli, Giorgio Pettinari, Mario Capizzi, Laura Felisari, Silvia Rubini, Marco Francardi, Annamaria Gerardino, Peter C. M. Christianen and Jan C. Maan

    Version of Record online : 21 APR 2011, DOI: 10.1002/adma.201004703

  2. Hydrogen-mediated nanostructuring of dilute nitride semiconductors

    physica status solidi (b)

    Volume 248, Issue 5, May 2011, Pages: 1195–1202, Rinaldo Trotta, Antonio Polimeni and Mario Capizzi

    Version of Record online : 5 APR 2011, DOI: 10.1002/pssb.201000797

  3. The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiy Films

    Chemical Vapor Deposition

    Volume 21, Issue 7-8-9, September 2015, Pages: 166–175, Kamran Forghani, Yingxin Guan, Adam Wood, Susan Babock, Luke Mawst and Thomas F. Kuech

    Version of Record online : 27 APR 2015, DOI: 10.1002/cvde.201507160

  4. Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states

    physica status solidi (b)

    Volume 250, Issue 4, April 2013, Pages: 779–786, Giorgio Pettinari, Antonio Polimeni, Mario Capizzi, Hans Engelkamp, Peter C. M. Christianen, Jan C. Maan, Amalia Patanè and Thomas Tiedje

    Version of Record online : 11 FEB 2013, DOI: 10.1002/pssb.201200463

  5. Localization effects and band gap of GaAsBi alloys

    physica status solidi (b)

    Volume 251, Issue 6, June 2014, Pages: 1276–1281, A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David and B. Y. Majlis

    Version of Record online : 6 MAY 2014, DOI: 10.1002/pssb.201350311

  6. Antimony Induced {112}A Faceted Triangular GaAs1−xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality

    Advanced Functional Materials

    Volume 25, Issue 33, September 2, 2015, Pages: 5300–5308, Xiaoming Yuan, Philippe Caroff, Fan Wang, Yanan Guo, Yuda Wang, Howard E. Jackson, Leigh M. Smith, Hark Hoe Tan and Chennupati Jagadish

    Version of Record online : 27 JUL 2015, DOI: 10.1002/adfm.201501467

  7. III–V Semiconductors

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    Christopher M. Snowden

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme441

  8. Modulation Doped FETs

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    Lianghong Liu and Hadis Morkoç

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme269

  9. Tunable Polarity in a III–V Nanowire by Droplet Wetting and Surface Energy Engineering

    Advanced Materials

    Volume 27, Issue 40, October 28, 2015, Pages: 6096–6103, Xiaoming Yuan, Philippe Caroff, Jennifer Wong-Leung, Lan Fu, Hark Hoe Tan and Chennupati Jagadish

    Version of Record online : 17 SEP 2015, DOI: 10.1002/adma.201503540

  10. Diodes, Light-emitting

    Standard Article

    Encyclopedia of Applied Physics

    Nathan F. Gardner, M. George Craford and Frank M. Steranka

    Published Online : 15 OCT 2004, DOI: 10.1002/3527600434.eap200.pub2

  11. The Effects of Accounting Standard Precision, Auditor Task Expertise, and Judgment Frameworks on Audit Firm Litigation Exposure

    Contemporary Accounting Research

    Volume 32, Issue 1, Spring 2015, Pages: 336–357, Jonathan H. Grenier, Bradley Pomeroy and Matthew T. Stern

    Version of Record online : 21 OCT 2014, DOI: 10.1111/1911-3846.12092

  12. Gunn or Transferred-Electron Devices and Circuits

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    Heribert Eisele

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme154

  13. Monolithic Microwave Integrated Circuits (MMICs)

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    Inder J. Bahl

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme271

  14. Heterojunction Bipolar Transistor

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    Jayasimha Prasad

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme161

  15. Semiconductors

    Standard Article

    Ullmann's Encyclopedia of Industrial Chemistry

    Masamichi Mizutori and Rokuro Yamada

    Published Online : 15 JUN 2000, DOI: 10.1002/14356007.a23_537

  16. Noise, Hot Carrier Effects

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    Arvydas Matulionis

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme292

  17. Packaging RF Devices and Modules

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    Y. C. Lee, Wenge Zhang, Bingzhi Su, Zhiping Feng and K. C. Gupta

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme302

  18. Gallium Arsenide Technology and Applications

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    G. F. Manes

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme143

  19. Diodes, Light-emitting

    Standard Article

    The Optics Encyclopedia

    Nathan F. Gardner, M. George Craford and Frank M. Steranka

    Published Online : 15 SEP 2007, DOI: 10.1002/9783527600441.oe012

  20. You have full text access to this OnlineOpen article
    Spin–orbit interaction in the magnetization of two-dimensional electron systems

    physica status solidi (b)

    Volume 251, Issue 9, September 2014, Pages: 1710–1724, M. A. Wilde, B. Rupprecht, F. Herzog, A. Ibrahim and D. Grundler

    Version of Record online : 16 MAY 2014, DOI: 10.1002/pssb.201350203