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There are 6387 results for: content related to: The Impact of Carrier Transport Confinement on the Energy Transfer Between InGaN/GaN Quantum-Well Nanorods and Colloidal Nanocrystals

  1. Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride-based LEDs

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 2162–2164, Y. K. Su, J. J. Chen, C. L. Lin, C. C. Kao and C. T. Lin

    Version of Record online : 26 APR 2010, DOI: 10.1002/pssc.200983503

  2. 2-µm Wavelength Lasers Employing InP-based Strained-Layer Quantum Wells

    Long-Wavelength Infrared Semiconductor Lasers

    Manabu Mitsuhara, Mamoru Oishi, Pages: 19–68, 2005

    Published Online : 28 JAN 2005, DOI: 10.1002/0471649813.ch2

  3. High-speed InGaAs/InAlAs multiple-quantum-well optical modulator

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 75, Issue 6, 1992, Pages: 24–32, Isamu Kotaka, Osamu Mitomi, Koichi Wakita, Yuichi Kawamura and Hiromitsu Asai

    Version of Record online : 22 MAR 2007, DOI: 10.1002/ecjb.4420750603

  4. Multiple-quantum-well optical modulators and their monolithic integration with DFB lasers for optical-fiber communications (invited paper)

    Microwave and Optical Technology Letters

    Volume 7, Issue 3, 20 February 1994, Pages: 120–128, Koichi Wakita and Isamu Kotaka

    Version of Record online : 22 JAN 2007, DOI: 10.1002/mop.4650070310

  5. Effect of III-nitride polarization on VOC in p–i–n and MQW solar cells

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 2, February 2011, Pages: 86–88, Gon Namkoong, Patrick Boland, Si-Young Bae, Jae-Phil Shim, Dong-Seon Lee, Seong-Ran Jeon, Kurniawan Foe, Kevin Latimer and W. Alan Doolittle

    Version of Record online : 12 JAN 2011, DOI: 10.1002/pssr.201004512

  6. Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 917–922, Hisashi Yoshida, Toshiki Hikosaka, Hajime Nago and Shinya Nunoue

    Version of Record online : 25 MAR 2015, DOI: 10.1002/pssb.201451585

  7. On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer

    physica status solidi (a)

    Volume 208, Issue 12, December 2011, Pages: 2907–2912, X. Li, F. Zhang, S. Okur, V. Avrutin, S. J. Liu, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. S. Hsu and A. Matulionis

    Version of Record online : 9 AUG 2011, DOI: 10.1002/pssa.201127250

  8. 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells

    Progress in Photovoltaics: Research and Applications

    Volume 22, Issue 7, July 2014, Pages: 784–795, Hiromasa Fujii, Kasidit Toprasertpong, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama and Yoshiaki Nakano

    Version of Record online : 23 DEC 2013, DOI: 10.1002/pip.2454

  9. Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 2161–2163, Te-Chung Wang, Tsung-Shine Ko, Tien-Chang Lu, Hao-Chung Kuo, Run-Ci Gao, Jenq-Dar Tsay and Sing-Chung Wang

    Version of Record online : 16 APR 2008, DOI: 10.1002/pssc.200778503

  10. Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells

    Advanced Optical Materials

    Volume 2, Issue 5, May 2014, Pages: 451–458, Jun Yin, Yang Li, Shengchang Chen, Jing Li, Junyong Kang, Wei Li, Peng Jin, Yonghai Chen, Zhihao Wu, Jiangnan Dai, Yanyan Fang and Changqing Chen

    Version of Record online : 4 MAR 2014, DOI: 10.1002/adom.201300463

  11. Correlative High-Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer

    Advanced Materials Interfaces

    Volume 2, Issue 1, January 7, 2015, Kyung Song, Christoph T. Koch, Ja Kyung Lee, Dong Yeong Kim, Jong Kyu Kim, Amin Parvizi, Woo Young Jung, Chan Gyung Park, Hyeok Jae Jeong, Hyoung Seop Kim, Ye Cao, Tiannan Yang, Long-Qing Chen and Sang Ho Oh

    Version of Record online : 15 OCT 2014, DOI: 10.1002/admi.201400281

  12. New photonic device integration by selective-area MOVPE and its application to optical modulator/laser integration (invited paper)

    Microwave and Optical Technology Letters

    Volume 7, Issue 3, 20 February 1994, Pages: 132–139, M. Aoki, M. Suzuki, T. Taniwatari, H. Sano and T. Kawano

    Version of Record online : 22 JAN 2007, DOI: 10.1002/mop.4650070312

  13. A comparative study of the internal quantum efficiency for the green MQWs grown on sapphire and FS-GaN substrates

    physica status solidi (c)

    Volume 4, Issue 1, January 2007, Pages: 187–191, Yong-Hee Jeong, Hae-Yong Lee, Jae-Young Park, Jong-Pil Jeong, Chang-Hee Hong and Eun-Kyung Suh

    Version of Record online : 8 JAN 2007, DOI: 10.1002/pssc.200673528

  14. Ultrafast Electrically Tunable Polaritonic Metasurfaces

    Advanced Optical Materials

    Volume 2, Issue 11, November 2014, Pages: 1057–1063, Jongwon Lee, Seungyong Jung, Pai-Yen Chen, Feng Lu, Frederic Demmerle, Gerhard Boehm, Markus-Christian Amann, Andrea Alù and Mikhail A. Belkin

    Version of Record online : 30 JUL 2014, DOI: 10.1002/adom.201400185

  15. Monolitically grown dual wavelength InGaN LEDs for improved CRI

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2396–2398, P. Stauss, M. Mandl, P. Rode, A. Laubsch, A. Biebersdorf, R. Windisch, B. Galler, P. Drechsel and U. Steegmüller

    Version of Record online : 15 JUN 2011, DOI: 10.1002/pssc.201001073

  16. You have free access to this content
    Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

    Progress in Photovoltaics: Research and Applications

    Volume 24, Issue 4, April 2016, Pages: 533–542, Kasidit Toprasertpong, Hiromasa Fujii, Tomos Thomas, Markus Führer, Diego Alonso-Álvarez, Daniel J. Farrell, Kentaroh Watanabe, Yoshitaka Okada, Nicholas J. Ekins-Daukes, Masakazu Sugiyama and Yoshiaki Nakano

    Version of Record online : 20 JAN 2015, DOI: 10.1002/pip.2585

  17. Magnetic-Mechanical-Electrical-Optical Coupling Effects in GaN-Based LED/Rare-Earth Terfenol-D Structures

    Advanced Materials

    Volume 26, Issue 39, October 22, 2014, Pages: 6767–6772, Mingzeng Peng, Yan Zhang, Yudong Liu, Ming Song, Junyi Zhai and Zhong Lin Wang

    Version of Record online : 2 SEP 2014, DOI: 10.1002/adma.201402824

  18. X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1655–1658, S. M. O'Malley, P. L. Bonanno, T. Wunderer, P. Brückner, B. Neubert, F. Scholz, A. Kazimirov and A. A. Sirenko

    Version of Record online : 16 APR 2008, DOI: 10.1002/pssc.200778571

  19. Cathodoluminescence from an InGaN/GaN MQW Grown on an Epitaxially Laterally Overgrown GaN Epilayer

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 347–350, C. Trager-Cowan, I. Osborne, M. Barisonzi, S.K. Manson-Smith, K.P. O'Donnell, K. Jacobs, I. Moerman and P. Demeester

    Version of Record online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<347::AID-PSSB347>3.0.CO;2-G

  20. High-speed (20 Gb/s), low-drive voltage (2 Vp-p) strained InGaAsP mqw modulator/DFB laser light source

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 78, Issue 1, January 1995, Pages: 1–9, Isamu Kotaka, Kenji Sato, Koichi Wakita, Mitsuo Yamamoto and Tomoyoshi Kataoka

    Version of Record online : 22 MAR 2007, DOI: 10.1002/ecjb.4420780101