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There are 6259 results for: content related to: Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

  1. X-ray absorption and resonant photoemission studies of electroforming process in Fe-doped SrTiO3 epitaxial films

    X-Ray Spectrometry

    Volume 44, Issue 5, September/October 2015, Pages: 339–343, Jerzy Kubacki, Dariusz Kajewski, Annemarie Koehl, Christian Lenser, Regina Dittmann and Jacek Szade

    Article first published online : 26 JUN 2015, DOI: 10.1002/xrs.2637

  2. Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors

    Advanced Functional Materials

    Volume 24, Issue 43, November 19, 2014, Pages: 6741–6750, Hussein Nili, Sumeet Walia, Sivacarendran Balendhran, Dmitri B. Strukov, Madhu Bhaskaran and Sharath Sriram

    Article first published online : 26 AUG 2014, DOI: 10.1002/adfm.201401278

  3. Donor-Induced Performance Tuning of Amorphous SrTiO3 Memristive Nanodevices: Multistate Resistive Switching and Mechanical Tunability

    Advanced Functional Materials

    Volume 25, Issue 21, June 3, 2015, Pages: 3172–3182, Hussein Nili, Sumeet Walia, Ahmad Esmaielzadeh Kandjani, Rajesh Ramanathan, Philipp Gutruf, Taimur Ahmed, Sivacarendran Balendhran, Vipul Bansal, Dmitri B. Strukov, Omid Kavehei, Madhu Bhaskaran and Sharath Sriram

    Article first published online : 14 APR 2015, DOI: 10.1002/adfm.201501019

  4. Physics of the Switching Kinetics in Resistive Memories

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6306–6325, Stephan Menzel, Ulrich Böttger, Martin Wimmer and Martin Salinga

    Article first published online : 18 JUN 2015, DOI: 10.1002/adfm.201500825

  5. Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin films

    physica status solidi (a)

    Volume 212, Issue 4, April 2015, Pages: 751–766, Irina Kärkkänen, Andrey Shkabko, Mikko Heikkilä, Marko Vehkamäki, Jaakko Niinistö, Nabeel Aslam, Paul Meuffels, Mikko Ritala, Markku Leskelä, Rainer Waser and Susanne Hoffmann-Eifert

    Article first published online : 21 JAN 2015, DOI: 10.1002/pssa.201431489

  6. Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6360–6368, Christian Lenser, Annemarie Koehl, Ivetta Slipukhina, Hongchu Du, Marten Patt, Vitaliy Feyer, Claus M. Schneider, Marjana Lezaic, Rainer Waser and Regina Dittmann

    Article first published online : 18 MAY 2015, DOI: 10.1002/adfm.201500851

  7. Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 6, June 2015, Pages: 362–365, Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi and Cheol Seong Hwang

    Article first published online : 6 MAY 2015, DOI: 10.1002/pssr.201510110

  8. Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage

    Advanced Functional Materials

    Volume 25, Issue 19, May 20, 2015, Pages: 2876–2883, Jonghan Kwon, Abhishek A. Sharma, James A. Bain, Yoosuf N. Picard and Marek Skowronski

    Article first published online : 30 MAR 2015, DOI: 10.1002/adfm.201500444

  9. Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

    Advanced Materials

    Volume 22, Issue 43, November 16, 2010, Pages: 4819–4822, Ruth Muenstermann, Tobias Menke, Regina Dittmann and Rainer Waser

    Article first published online : 27 AUG 2010, DOI: 10.1002/adma.201001872

  10. Effect of resistive switching and electrically driven insulator–conductor transition in PbZrO3 single crystals

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 507–512, Irena Jankowska-Sumara, Krzysztof Szot, Andrzej Majchrowski and Krystian Roleder

    Article first published online : 13 DEC 2012, DOI: 10.1002/pssa.201228586

  11. Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window

    Advanced Electronic Materials

    Volume 2, Issue 4, April 2016, Kai Qian, Viet Cuong Nguyen, Tupei Chen and Pooi See Lee

    Article first published online : 13 JAN 2016, DOI: 10.1002/aelm.201500370

  12. Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

    Advanced Materials

    Volume 22, Issue 36, September 22, 2010, Pages: 4034–4038, J. Joshua Yang, John Paul Strachan, Qiangfei Xia, Douglas A. A. Ohlberg, Philip J. Kuekes, Ronald D. Kelley, William F. Stickle, Duncan R. Stewart, Gilberto Medeiros-Ribeiro and R. Stanley Williams

    Article first published online : 30 JUL 2010, DOI: 10.1002/adma.201000663

  13. Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

    Advanced Functional Materials

    Volume 24, Issue 32, August 27, 2014, Pages: 5086–5095, Jung Ho Yoon, Seul Ji Song, Il-Hyuk Yoo, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park and Cheol Seong Hwang

    Article first published online : 26 MAY 2014, DOI: 10.1002/adfm.201400064

  14. Resistive-Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires

    Small

    Volume 7, Issue 20, October 17, 2011, Pages: 2899–2905, Carlo Cagli, Federico Nardi, Bruce Harteneck, Zhongkui Tan, Yuegang Zhang and Daniele Ielmini

    Article first published online : 23 AUG 2011, DOI: 10.1002/smll.201101157

  15. Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory

    Advanced Functional Materials

    Volume 21, Issue 9, May 10, 2011, Pages: 1587–1592, Kyung Min Kim, Seul Ji Song, Gun Hwan Kim, Jun Yeong Seok, Min Hwan Lee, Jung Ho Yoon, Jucheol Park and Cheol Seong Hwang

    Article first published online : 11 MAR 2011, DOI: 10.1002/adfm.201002282

  16. Size Dependence of Resistive Switching at Nanoscale Metal-Oxide Interfaces

    Advanced Functional Materials

    Volume 24, Issue 26, July 9, 2014, Pages: 4113–4118, Jiechang Hou, Stephen S. Nonnenmann, Wei Qin and Dawn A. Bonnell

    Article first published online : 26 MAR 2014, DOI: 10.1002/adfm.201304121

  17. In situ TEM study of reversible and irreversible electroforming in Pt/Ti:NiO/Pt heterostructures

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 5, May 2015, Pages: 301–306, Kenneth D'Aquila, Yuzi Liu, Hakim Iddir and Amanda K. Petford-Long

    Article first published online : 14 APR 2015, DOI: 10.1002/pssr.201510063

  18. Self-Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance

    Advanced Functional Materials

    Volume 25, Issue 10, March 11, 2015, Pages: 1527–1534, Kyung Min Kim, Seung Ryul Lee, Sungho Kim, Man Chang and Cheol Seong Hwang

    Article first published online : 23 JAN 2015, DOI: 10.1002/adfm.201403621

  19. Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

    Advanced Functional Materials

    Volume 24, Issue 36, September 24, 2014, Pages: 5679–5686, Haitao Sun, Qi Liu, Congfei Li, Shibing Long, Hangbing Lv, Chong Bi, Zongliang Huo, Ling Li and Ming Liu

    Article first published online : 14 JUL 2014, DOI: 10.1002/adfm.201401304

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    Prospective of Semiconductor Memory Devices: from Memory System to Materials

    Advanced Electronic Materials

    Volume 1, Issue 6, June 2015, Cheol Seong Hwang

    Article first published online : 15 MAY 2015, DOI: 10.1002/aelm.201400056