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There are 36984 results for: content related to: Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

  1. Resistive Switching in Mott Insulators and Correlated Systems

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6287–6305, Etienne Janod, Julien Tranchant, Benoit Corraze, Madec Querré, Pablo Stoliar, Marcelo Rozenberg, Tristan Cren, Dimitri Roditchev, Vinh Ta Phuoc, Marie-Paule Besland and Laurent Cario

    Version of Record online : 14 JUL 2015, DOI: 10.1002/adfm.201500823

  2. Resistive-Switching Memory

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Daniele Ielmini

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W8222

  3. Towards the Development of Flexible Non-Volatile Memories

    Advanced Materials

    Volume 25, Issue 38, October 11, 2013, Pages: 5425–5449, Su-Ting Han, Ye Zhou and V. A. L. Roy

    Version of Record online : 22 AUG 2013, DOI: 10.1002/adma.201301361

  4. Transfer of functional memory devices to any substrate

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 5, May 2013, Pages: 326–331, Ji-Min Choi, Moon-Seok Kim, Myeong-Lok Seol and Yang-Kyu Choi

    Version of Record online : 4 APR 2013, DOI: 10.1002/pssr.201307084

  5. Resistance Random Access Memory Based on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis


    Volume 8, Issue 18, September 24, 2012, Pages: 2849–2855, Yong Chan Ju, Seungwook Kim, Tae-Geun Seong, Sahn Nahm, Haegeun Chung, Kwon Hong and Woong Kim

    Version of Record online : 22 JUN 2012, DOI: 10.1002/smll.201200488

  6. Comprehensive Writing Margin Analysis and its Application to Stacked one Diode-One Memory Device for High-Density Crossbar Resistance Switching Random Access Memory

    Advanced Electronic Materials

    Volume 2, Issue 10, October 2016, Kyung Jean Yoon, Woorham Bae, Deog-Kyoon Jeong and Cheol Seong Hwang

    Version of Record online : 16 SEP 2016, DOI: 10.1002/aelm.201600326

  7. Improvement of resistive switching fluctuations by using one step lift-off process

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 10, October 2015, Pages: 594–596, Yingtao Li, Xiaoping Gao, Liping Fu, Peng Yuan, Hong Wang and Chunlan Tao

    Version of Record online : 24 SEP 2015, DOI: 10.1002/pssr.201510286

  8. A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology

    physica status solidi (a)

    Volume 213, Issue 2, February 2016, Pages: 289–301, Francesco Maria Puglisi, Damien Deleruyelle, Jean-Michel Portal, Paolo Pavan and Luca Larcher

    Version of Record online : 20 JAN 2016, DOI: 10.1002/pssa.201532828

  9. Interface-engineered resistive memory using plasma-modified electrode on polyimide substrate

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 1, January 2014, Pages: 100–104, Zhi-Wei Zheng, Hsiao-Hsuan Hsu and Chun-Hu Cheng

    Version of Record online : 23 OCT 2013, DOI: 10.1002/pssr.201308143

  10. First evidence of resistive switching in polycrystalline GaV4S8 thin layers

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 2, February 2011, Pages: 53–55, Emeline Souchier, Laurent Cario, Benoit Corraze, Philippe Moreau, Pascale Mazoyer, Claude Estournès, Richard Retoux, Etienne Janod and Marie-Paule Besland

    Version of Record online : 29 DEC 2010, DOI: 10.1002/pssr.201004392

  11. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

    Advanced Functional Materials

    Volume 24, Issue 15, April 16, 2014, Pages: 2171–2179, Jie Shang, Gang Liu, Huali Yang, Xiaojian Zhu, Xinxin Chen, Hongwei Tan, Benlin Hu, Liang Pan, Wuhong Xue and Run-Wei Li

    Version of Record online : 27 NOV 2013, DOI: 10.1002/adfm.201303274

  12. A Parallel Circuit Model for Multi-State Resistive-Switching Random Access Memory

    Advanced Functional Materials

    Volume 22, Issue 3, February 8, 2012, Pages: 546–554, Albert B. K. Chen, Byung Joon Choi, Xiang Yang and I.-Wei Chen

    Version of Record online : 7 DEC 2011, DOI: 10.1002/adfm.201102208

  13. Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 7, July 2013, Pages: 493–496, Soyun Park, Jae Hyuk Lee, Hee-Dong Kim, Seok Man Hong, Ho-Myoung An and Tae Geun Kim

    Version of Record online : 14 JUN 2013, DOI: 10.1002/pssr.201307187

  14. Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

    Advanced Materials

    Volume 27, Issue 34, September 9, 2015, Pages: 5028–5033, Jui-Yuan Chen, Chun-Wei Huang, Chung-Hua Chiu, Yu-Ting Huang and Wen-Wei Wu

    Version of Record online : 20 JUL 2015, DOI: 10.1002/adma.201502758

  15. RRAMs based on anionic and cationic switching: a short overview

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 6, June 2014, Pages: 501–511, Sergiu Clima, Kiroubanand Sankaran, Yang Yin Chen, Andrea Fantini, Umberto Celano, Attilio Belmonte, Leqi Zhang, Ludovic Goux, Bogdan Govoreanu, Robin Degraeve, Dirk J. Wouters, Malgorzata Jurczak, Wilfried Vandervorst, Stefan De Gendt and Geoffrey Pourtois

    Version of Record online : 4 APR 2014, DOI: 10.1002/pssr.201409054

  16. Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

    Advanced Materials

    Volume 25, Issue 10, March 13, 2013, Pages: 1474–1478, S. Balatti, S. Larentis, D. C. Gilmer and D. Ielmini

    Version of Record online : 3 JAN 2013, DOI: 10.1002/adma.201204097

  17. 3D Cross-Point Array Memory

    Vertical 3D Memory Technologies

    Betty Prince, Pages: 192–274, 2014

    Published Online : 25 JUL 2014, DOI: 10.1002/9781118760475.ch05

  18. Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory

    Advanced Materials

    Donghee Son, Sue In Chae, Myungbin Kim, Moon Kee Choi, Jiwoong Yang, Kunsu Park, Vinayak S. Kale, Ja Hoon Koo, Changsoon Choi, Minbaek Lee, Ji Hoon Kim, Taeghwan Hyeon and Dae-Hyeong Kim

    Version of Record online : 29 AUG 2016, DOI: 10.1002/adma.201602391

  19. Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 7, July 2011, Pages: 223–225, H. J. Wang, C. W. Zou, L. Zhou, C. X. Tian, M. K. Lee, J. C. Lee, T. W. Kang and D. J. Fu

    Version of Record online : 25 MAY 2011, DOI: 10.1002/pssr.201105146

  20. Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

    Advanced Materials

    Volume 24, Issue 26, July 10, 2012, Pages: 3573–3576, Jaewon Jang, Feng Pan, Kyle Braam and Vivek Subramanian

    Version of Record online : 12 JUN 2012, DOI: 10.1002/adma.201200671