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There are 18369 results for: content related to: Wafer-Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers

  1. MBE Growth of Strained InxGa1−xAs on GaAs(001)

    physica status solidi (a)

    Volume 155, Issue 2, 16 June 1996, Pages: 427–437, á. Nemcsics, J. Olde, M. Geyer, R. Schnurpfeil, R. Manzke and M. Skibowski

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211550216

  2. Theoretical calculation of optical gain and threshold current density in strained in1−XGaxAs/InP quantum-well lasers using strain-dependent conduction-band and valence-band structures (invited paper)

    Microwave and Optical Technology Letters

    Volume 7, Issue 3, 20 February 1994, Pages: 107–113, Mitsuru Sugawara and Susumu Yamazaki

    Version of Record online : 22 JAN 2007, DOI: 10.1002/mop.4650070308

  3. You have free access to this content
    No Pain, No Strain: Impact of Health on the Financial Security of Older Americans

    Journal of Consumer Affairs

    Volume 42, Issue 1, Spring 2008, Pages: 9–36, HYUNGSOO KIM and 1 ANGELA C. LYONS 2

    Version of Record online : 22 FEB 2008, DOI: 10.1111/j.1745-6606.2007.00092.x

  4. Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    A. Mohanbabu, N. Mohankumar, D. Godwin Raj, Partha Sarkar and Samar K. Saha

    Version of Record online : 3 AUG 2017, DOI: 10.1002/jnm.2276

  5. Conduction-Band Discontinuities of Strained- and Unstrained-Layer InxGa1−xAs/GaAs and InxGa1−xAs/InP Heterojunctions and Quantum Wells

    physica status solidi (a)

    Volume 124, Issue 2, 16 April 1991, Pages: K111–K116, L̆. Hrivnák

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211240233

  6. Identification of the L-Band in InxGa1−xP/In)0.5Al0.5P Multiple Quantum Wells from High Pressure Measurement

    physica status solidi (b)

    Volume 198, Issue 1, 1 November 1996, Pages: 337–341, D. Patel, K. Interholzinger, P. Thiagarajan, G. Y. Robinson and C. S. Menoni

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssb.2221980144

  7. The relations for electron effective masses of strained InxGa1−xAs layers

    physica status solidi (a)

    Volume 123, Issue 2, 16 February 1991, Pages: K133–K137, Ľ. Hrivnák

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssa.2211230230

  8. Strain effects on refractive index and confinement factor of InxGa(1−x)As laser diodes

    Microwave and Optical Technology Letters

    Volume 7, Issue 3, 20 February 1994, Pages: 113–119, H. Ghafouri-Shiraz and S. Tsuji

    Version of Record online : 22 JAN 2007, DOI: 10.1002/mop.4650070309

  9. Bandgap Tunability in Zn(Sn,Ge)N2 Semiconductor Alloys

    Advanced Materials

    Volume 26, Issue 8, February 26, 2014, Pages: 1235–1241, Prineha Narang, Shiyou Chen, Naomi C. Coronel, Sheraz Gul, Junko Yano, Lin-Wang Wang, Nathan S. Lewis and Harry A. Atwater

    Version of Record online : 5 DEC 2013, DOI: 10.1002/adma.201304473

  10. Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene

    Advanced Materials

    Volume 28, Issue 37, October 5, 2016, Pages: 8177–8183, Van Luan Nguyen, David J. Perello, Seunghun Lee, Chang Tai Nai, Bong Gyu Shin, Joong-Gyu Kim, Ho Yeol Park, Hu Young Jeong, Jiong Zhao, Quoc An Vu, Sang Hyub Lee, Kian Ping Loh, Se-Young Jeong and Young Hee Lee

    Version of Record online : 14 JUL 2016, DOI: 10.1002/adma.201601760

  11. Inside Back Cover: InxGa1−xAs quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking (Phys. Status Solidi A 1/2011)

    physica status solidi (a)

    Volume 208, Issue 1, January 2011, Jihoon Lee, Zhiming Wang, V. Yazdanpanah, Eun-Soo Kim, Sang-Mo Koo and Gregory J. Salamo

    Version of Record online : 12 JAN 2011, DOI: 10.1002/pssa.201190001

  12. Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method


    Volume 38, Issue 4, July/August 2016, Pages: 297–302, Suat Pat, Soner Özen, Volkan Şenay, Şadan Korkmaz and Veli Şimşek

    Version of Record online : 11 SEP 2015, DOI: 10.1002/sca.21269

  13. Calculation of Electronic States in Semiconductor Heterostructures with an Empirical spds* Tight-Binding Model

    physica status solidi (b)

    Volume 217, Issue 1, January 2000, Pages: 449–460, R. Scholz, J.-M. Jancu, F. Beltram and F. Bassani

    Version of Record online : 13 JAN 2000, DOI: 10.1002/(SICI)1521-3951(200001)217:1<449::AID-PSSB449>3.0.CO;2-B

  14. Wafer Scale Synthesis and High Resolution Structural Characterization of Atomically Thin MoS2 Layers

    Advanced Functional Materials

    Volume 24, Issue 47, December 17, 2014, Pages: 7461–7466, Aaron S. George, Zafer Mutlu, Robert Ionescu, Ryan J. Wu, Jong S. Jeong, Hamed H. Bay, Yu Chai, K. Andre Mkhoyan, Mihrimah Ozkan and Cengiz S. Ozkan

    Version of Record online : 30 SEP 2014, DOI: 10.1002/adfm.201402519

  15. Raman Scattering Study of Zincblende InxGa1–xN Alloys

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 769–774, A. Tabata, E. Silveira, J.R. Leite, R. Trentin, L.M.R. Scolfaro, V. Lemos, T. Frey, D.J. As, D. Schikora and K. Lischka

    Version of Record online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<769::AID-PSSB769>3.0.CO;2-L

  16. Study of doping of InxGa1−xAs films with germanium

    physica status solidi (a)

    Volume 31, Issue 1, 16 September 1975, Pages: 293–300, Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, N. E. Marchenko and B. V. Morozov

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2210310134

  17. Electron and exciton energy spectra in self-assembled InGaAs/GaAs ring-like nanostructures

    physica status solidi (b)

    Volume 245, Issue 12, December 2008, Pages: 2657–2661, V. M. Fomin, V. N. Gladilin, J. T. Devreese, N. A. J. M. Kleemans, M. Bozkurt and P. M. Koenraad

    Version of Record online : 10 OCT 2008, DOI: 10.1002/pssb.200879817

  18. SIMS and X-ray diffraction characterization of carbon-doped GaAs, AlxGa1 − xAs films grown by MBE

    Surface and Interface Analysis

    Volume 22, Issue 1-12, July 1994, Pages: 367–371, C. Gerardi, C. Giannini, L. Tapfer, A. Fischer and K. H. Ploog

    Version of Record online : 15 SEP 2004, DOI: 10.1002/sia.740220180

  19. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    Advanced Materials

    Volume 23, Issue 20, May 24, 2011, Pages: 2377–2383, Hong Lu, Peter G. Burke, Arthur C. Gossard, Gehong Zeng, Ashok T. Ramu, Je-Hyeong Bahk and John E. Bowers

    Version of Record online : 15 APR 2011, DOI: 10.1002/adma.201100449

  20. Modulation Doped FETs

    Standard Article

    Encyclopedia of RF and Microwave Engineering

    Lianghong Liu and Hadis Morkoç

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme269