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There are 2171 results for: content related to: Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO 2 Thin Films for ReRAM

  1. 3D Cross-Point Array Memory

    Vertical 3D Memory Technologies

    Betty Prince, Pages: 192–274, 2014

    Published Online : 25 JUL 2014, DOI: 10.1002/9781118760475.ch05

  2. Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6414–6423, Anne Siemon, Thomas Breuer, Nabeel Aslam, Sebastian Ferch, Wonjoo Kim, Jan van den Hurk, Vikas Rana, Susanne Hoffmann-Eifert, Rainer Waser, Stephan Menzel and Eike Linn

    Article first published online : 18 JUN 2015, DOI: 10.1002/adfm.201500865

  3. Dependence of the SET switching variability on the initial state in HfOx-based ReRAM

    physica status solidi (a)

    Volume 213, Issue 2, February 2016, Pages: 316–319, Camilla La Torre, Karsten Fleck, Sergej Starschich, Eike Linn, Rainer Waser and Stephan Menzel

    Article first published online : 17 DEC 2015, DOI: 10.1002/pssa.201532375

  4. Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 3, March 2014, Pages: 239–242, Ju Hyun Park, Hee-Dong Kim, Seok Man Hong, Min Ju Yun, Dong Su Jeon and Tae Geun Kim

    Article first published online : 23 DEC 2013, DOI: 10.1002/pssr.201308309

  5. High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

    Advanced Materials

    Volume 23, Issue 11, March 18, 2011, Pages: 1351–1355, Zhibo Yan, Yanyan Guo, Guoquan Zhang and J.-M. Liu

    Article first published online : 15 FEB 2011, DOI: 10.1002/adma.201004306

  6. Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

    Advanced Functional Materials

    Volume 24, Issue 32, August 27, 2014, Pages: 5086–5095, Jung Ho Yoon, Seul Ji Song, Il-Hyuk Yoo, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park and Cheol Seong Hwang

    Article first published online : 26 MAY 2014, DOI: 10.1002/adfm.201400064

  7. Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

    Advanced Materials

    Volume 27, Issue 1, January 7, 2015, Pages: 59–64, Daeseok Lee, Jaesung Park, Jaehyuk Park, Jiyong Woo, Euijun Cha, Sangheon Lee, Kibong Moon, Jeonghwan Song, Yunmo Koo and Hyunsang Hwang

    Article first published online : 6 NOV 2014, DOI: 10.1002/adma.201403675

  8. Self-Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance

    Advanced Functional Materials

    Volume 25, Issue 10, March 11, 2015, Pages: 1527–1534, Kyung Min Kim, Seung Ryul Lee, Sungho Kim, Man Chang and Cheol Seong Hwang

    Article first published online : 23 JAN 2015, DOI: 10.1002/adfm.201403621

  9. Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

    Advanced Functional Materials

    Volume 22, Issue 4, February 22, 2012, Pages: 709–716, Yoon Cheol Bae, Ah Rahm Lee, Ja Bin Lee, Ja Hyun Koo, Kyung Cheol Kwon, Jea Gun Park, Hyun Sik Im and Jin Pyo Hong

    Article first published online : 21 DEC 2011, DOI: 10.1002/adfm.201102362

  10. A HfO2-Based Complementary Switching Crossbar Adder

    Advanced Electronic Materials

    Volume 1, Issue 10, October 2015, Thomas Breuer, Anne Siemon, Eike Linn, Stephan Menzel, Rainer Waser and Vikas Rana

    Article first published online : 24 AUG 2015, DOI: 10.1002/aelm.201500138

  11. Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes

    Advanced Functional Materials

    Volume 25, Issue 35, September 16, 2015, Pages: 5586–5592, Niloufar Raeis Hosseini and Jang-Sik Lee

    Article first published online : 14 AUG 2015, DOI: 10.1002/adfm.201502592

  12. Resistive switching characteristics of TiN/MnO2/Pt memory devices

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 8-9, September 2010, Pages: 233–235, Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko and Jeon-kook Lee

    Article first published online : 21 JUL 2010, DOI: 10.1002/pssr.201004213

  13. Forming-free SiN-based resistive switching memory prepared by RF sputtering

    physica status solidi (a)

    Volume 210, Issue 9, September 2013, Pages: 1822–1827, Hee-Dong Kim, Ho-Myoung An, Seok Man Hong and Tae Geun Kim

    Article first published online : 3 JUN 2013, DOI: 10.1002/pssa.201329021

  14. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

    Advanced Materials

    Volume 24, Issue 14, April 10, 2012, Pages: 1844–1849, Qi Liu, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun and Ming Liu

    Article first published online : 7 MAR 2012, DOI: 10.1002/adma.201104104

  15. 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

    Advanced Functional Materials

    Volume 23, Issue 11, March 20, 2013, Pages: 1440–1449, Gun Hwan Kim, Jong Ho Lee, Youngbae Ahn, Woojin Jeon, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Tae Joo Park and Cheol Seong Hwang

    Article first published online : 18 OCT 2012, DOI: 10.1002/adfm.201202170

  16. Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 12, December 2010, Pages: 359–361, Sun Young Choi, Min Kyu Yang, Sangsig Kim and Jeon-Kook Lee

    Article first published online : 14 OCT 2010, DOI: 10.1002/pssr.201004388

  17. Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

    Advanced Electronic Materials

    Volume 1, Issue 8, August 2015, Jian-Shiou Huang, Yung-Chang Lin, Hung-Wei Tsai, Wen-Chun Yen, Chia-Wei Chen, Chi-Yuan Lee, Tsung-Shune Chin and Yu-Lun Chueh

    Article first published online : 6 JUL 2015, DOI: 10.1002/aelm.201500061

  18. Resistive Switching in Mott Insulators and Correlated Systems

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6287–6305, Etienne Janod, Julien Tranchant, Benoit Corraze, Madec Querré, Pablo Stoliar, Marcelo Rozenberg, Tristan Cren, Dimitri Roditchev, Vinh Ta Phuoc, Marie-Paule Besland and Laurent Cario

    Article first published online : 14 JUL 2015, DOI: 10.1002/adfm.201500823

  19. Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1–δFeO3 Interfaces

    Advanced Functional Materials

    Volume 22, Issue 5, March 7, 2012, Pages: 1040–1047, Atsushi Tsurumaki, Hiroyuki Yamada and Akihito Sawa

    Article first published online : 18 JAN 2012, DOI: 10.1002/adfm.201102883

  20. Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic-layer deposition

    physica status solidi (a)

    Volume 212, Issue 4, April 2015, Pages: 809–816, K. V. Egorov, R. V. Kirtaev, Yu. Yu. Lebedinskii, A. M. Markeev, Yu. A. Matveyev, O. M. Orlov, A. V. Zablotskiy and A. V. Zenkevich

    Article first published online : 20 JAN 2015, DOI: 10.1002/pssa.201431674