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There are 25493 results for: content related to: Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

  1. Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

    Advanced Functional Materials

    Volume 22, Issue 4, February 22, 2012, Pages: 709–716, Yoon Cheol Bae, Ah Rahm Lee, Ja Bin Lee, Ja Hyun Koo, Kyung Cheol Kwon, Jea Gun Park, Hyun Sik Im and Jin Pyo Hong

    Version of Record online : 21 DEC 2011, DOI: 10.1002/adfm.201102362

  2. Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches

    Advanced Functional Materials

    Volume 24, Issue 35, September 17, 2014, Pages: 5522–5529, Abhishek A. Sharma, Mohammad Noman, Mohamed Abdelmoula, Marek Skowronski and James A. Bain

    Version of Record online : 9 JUL 2014, DOI: 10.1002/adfm.201400461

  3. How Does Moisture Affect the Physical Property of Memristance for Anionic–Electronic Resistive Switching Memories?

    Advanced Functional Materials

    Volume 25, Issue 32, August 26, 2015, Pages: 5117–5125, Felix Messerschmitt, Markus Kubicek and Jennifer L. M. Rupp

    Version of Record online : 14 JUL 2015, DOI: 10.1002/adfm.201501517

  4. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

    Advanced Functional Materials

    Volume 24, Issue 15, April 16, 2014, Pages: 2171–2179, Jie Shang, Gang Liu, Huali Yang, Xiaojian Zhu, Xinxin Chen, Hongwei Tan, Benlin Hu, Liang Pan, Wuhong Xue and Run-Wei Li

    Version of Record online : 27 NOV 2013, DOI: 10.1002/adfm.201303274

  5. A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

    Advanced Materials

    Volume 25, Issue 12, March 25, 2013, Pages: 1774–1779, Shimeng Yu, Bin Gao, Zheng Fang, Hongyu Yu, Jinfeng Kang and H.-S. Philip Wong

    Version of Record online : 27 JAN 2013, DOI: 10.1002/adma.201203680

  6. Resistive Switching in Mott Insulators and Correlated Systems

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6287–6305, Etienne Janod, Julien Tranchant, Benoit Corraze, Madec Querré, Pablo Stoliar, Marcelo Rozenberg, Tristan Cren, Dimitri Roditchev, Vinh Ta Phuoc, Marie-Paule Besland and Laurent Cario

    Version of Record online : 14 JUL 2015, DOI: 10.1002/adfm.201500823

  7. Characteristics and mechanism of nano-polycrystalline La2O3 thin-film resistance switching memory

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 11, November 2013, Pages: 1005–1008, Hongbin Zhao, Hailing Tu, Feng Wei, Yuhua Xiong, Xinqaing Zhang and Jun Du

    Version of Record online : 29 AUG 2013, DOI: 10.1002/pssr.201308068

  8. Resistive Switching Memories: Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory (Adv. Mater. 29/2012)

    Advanced Materials

    Volume 24, Issue 29, August 2, 2012, Page: 3898, Xiaojian Zhu, Wenjing Su, Yiwei Liu, Benlin Hu, Liang Pan, Wei Lu, Jiandi Zhang and Run-Wei Li

    Version of Record online : 24 JUL 2012, DOI: 10.1002/adma.201290176

  9. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

    Advanced Functional Materials

    Volume 21, Issue 15, August 9, 2011, Pages: 2806–2829, Byungjin Cho, Sunghun Song, Yongsung Ji, Tae-Wook Kim and Takhee Lee

    Version of Record online : 8 JUL 2011, DOI: 10.1002/adfm.201100686

    Corrected by:

    Correction: Correction: Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

    Vol. 21, Issue 18, 3406, Version of Record online: 20 SEP 2011

  10. Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage

    Advanced Functional Materials

    Volume 25, Issue 19, May 20, 2015, Pages: 2876–2883, Jonghan Kwon, Abhishek A. Sharma, James A. Bain, Yoosuf N. Picard and Marek Skowronski

    Version of Record online : 30 MAR 2015, DOI: 10.1002/adfm.201500444

  11. Highly Reproducible and Regulated Conductance Quantization in a Polymer-Based Atomic Switch

    Advanced Functional Materials

    Volume 27, Issue 10, March 10, 2017, Karthik Krishnan, Manoharan Muruganathan, Tohru Tsuruoka, Hiroshi Mizuta and Masakazu Aono

    Version of Record online : 18 JAN 2017, DOI: 10.1002/adfm.201605104

  12. Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices

    Advanced Functional Materials

    Volume 26, Issue 41, November 2, 2016, Pages: 7406–7414, Sung Kyu Kim, Jong Yoon Kim, Byung Chul Jang, Mi Sun Cho, Sung-Yool Choi, Jeong Yong Lee and Hu Young Jeong

    Version of Record online : 31 AUG 2016, DOI: 10.1002/adfm.201602748

  13. Resistive Switching in Bulk Silver Nanowire–Polystyrene Composites

    Advanced Functional Materials

    Volume 21, Issue 2, January 21, 2011, Pages: 233–240, Sadie I. White, Patrick M. Vora, James M. Kikkawa and Karen I. Winey

    Version of Record online : 10 NOV 2010, DOI: 10.1002/adfm.201001383

  14. Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

    Advanced Functional Materials

    Volume 22, Issue 1, January 11, 2012, Pages: 70–77, Tohru Tsuruoka, Kazuya Terabe, Tsuyoshi Hasegawa, Ilia Valov, Rainer Waser and Masakazu Aono

    Version of Record online : 14 OCT 2011, DOI: 10.1002/adfm.201101846

  15. Resistive Switchings in Transition-Metal Oxides

    Functional Metal Oxides: New Science and Novel Applications

    Isao H. Inoue, Akihito Sawa, Pages: 443–463, 2013

    Published Online : 31 JUL 2013, DOI: 10.1002/9783527654864.ch16

  16. Resistive-Switching Memory

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Daniele Ielmini

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W8222

  17. Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6374–6381, Tohru Tsuruoka, Ilia Valov, Stefan Tappertzhofen, Jan van den Hurk, Tsuyoshi Hasegawa, Rainer Waser and Masakazu Aono

    Version of Record online : 1 JUN 2015, DOI: 10.1002/adfm.201500853

  18. Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3-δ Bits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance

    Advanced Functional Materials

    Volume 24, Issue 47, December 17, 2014, Pages: 7448–7460, Felix Messerschmitt, Markus Kubicek, Sebastian Schweiger and Jennifer L.M. Rupp

    Version of Record online : 25 SEP 2014, DOI: 10.1002/adfm.201402286

  19. 3D Cross-Point Array Memory

    Vertical 3D Memory Technologies

    Betty Prince, Pages: 192–274, 2014

    Published Online : 25 JUL 2014, DOI: 10.1002/9781118760475.ch05

  20. P-26: High Capacity Memory using Oxide Based Schottky Diode and Unipolar Resistive Array

    SID Symposium Digest of Technical Papers

    Volume 46, Issue 1, June 2015, Pages: 1213–1216, Yang-Shun Fan, Chih-Hsiang Chang, Guang-Ting Zheng, Che-Chia Chang and Po-Tsun Liu

    Version of Record online : 29 JUL 2015, DOI: 10.1002/sdtp.10063