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There are 19412 results for: content related to: Evolutionary Selection Growth: Towards Template-Insensitive Preparation of Single-Crystal Layers

  1. Heteroepitaxial Growth of GaN on Unconventional Templates and Layer-Transfer Techniques for Large-Area, Flexible/Stretchable Light-Emitting Diodes

    Advanced Optical Materials

    Volume 4, Issue 4, April 2016, Pages: 505–521, Jun Hee Choi, Jinwoo Kim, Hyobin Yoo, Jinyun Liu, Sunil Kim, Chan-Wook Baik, Chae-Ryong Cho, Jin Gu Kang, Miyoung Kim, P. V. Braun, Sungwoo Hwang and Tae-Sung Jung

    Version of Record online : 20 DEC 2015, DOI: 10.1002/adom.201500526

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    Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

    Chemical Vapor Deposition

    Volume 21, Issue 1-2-3, March 2015, Pages: 33–40, Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang

    Version of Record online : 18 DEC 2014, DOI: 10.1002/cvde.201407100

  3. Blue Light: A Fascinating Journey (Nobel Lecture)

    Angewandte Chemie International Edition

    Volume 54, Issue 27, June 26, 2015, Pages: 7750–7763, Prof. Isamu Akasaki

    Version of Record online : 27 MAY 2015, DOI: 10.1002/anie.201502664

  4. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices

    Laser & Photonics Reviews

    Volume 7, Issue 4, July 2013, Pages: 572–579, Wei Lin, Wei Jiang, Na Gao, Duanjun Cai, Shuping Li and Junyong Kang

    Version of Record online : 24 APR 2013, DOI: 10.1002/lpor.201200118

  5. Fascinating journeys into blue light (Nobel Lecture)

    Annalen der Physik

    Volume 527, Issue 5-6, June 2015, Pages: 311–326, Isamu Akasaki

    Version of Record online : 12 MAY 2015, DOI: 10.1002/andp.201500803

  6. Al(Ga)N/GaN high electron mobility transistors on silicon

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1049–1058, Yvon Cordier

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201532070

  7. Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 10, October 2013, Pages: 699–712, V. Consonni

    Version of Record online : 29 JUL 2013, DOI: 10.1002/pssr.201307237

  8. Piezotronic Effect Modulated Heterojuction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

    Advanced Materials

    Xingfu Wang, Ruomeng Yu, Chunyan Jiang, Weiguo Hu, Wenzhuo Wu, Yong Ding, Wenbo Peng, Shuti Li and Zhong Lin Wang

    Version of Record online : 3 JUN 2016, DOI: 10.1002/adma.201601721

  9. Modulation-Doped Field-Effect Transistors (MODFET)

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Congyong Zhu, Romualdo A. Ferreyra and Hadis Morkoç

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W3149.pub2

  10. Strain–Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer


    Volume 47, Issue s2, December 2011, Pages: 19–27, M. K. Öztürk, H. Altuntaş, S. Çörekçi, Y. Hongbo, S. Özçelik and E. Özbay

    Version of Record online : 10 JUN 2010, DOI: 10.1111/j.1475-1305.2009.00730.x

  11. Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon

    physica status solidi (b)

    Volume 248, Issue 3, March 2011, Pages: 594–599, Roghaiyeh Ravash, Juergen Blaesing, Thomas Hempel, Martin Noltemeyer, Armin Dadgar, Juergen Christen and Alois Krost

    Version of Record online : 9 NOV 2010, DOI: 10.1002/pssb.201046313

  12. Polar AlN/GaN interfaces: Structures and energetics

    physica status solidi (a)

    Volume 206, Issue 8, August 2009, Pages: 1892–1897, J. Kioseoglou, E. Kalesaki, L. Lymperakis, G. P. Dimitrakopulos, Ph. Komninou and Th. Karakostas

    Version of Record online : 17 JUL 2009, DOI: 10.1002/pssa.200881436

  13. Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1145–1152, Rémi Comyn, Yvon Cordier, Vincent Aimez and Hassan Maher

    Version of Record online : 15 JAN 2015, DOI: 10.1002/pssa.201431658

  14. Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

    physica status solidi (a)

    Volume 208, Issue 2, February 2011, Pages: 357–376, K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher and M. A. Hein

    Version of Record online : 21 JUL 2010, DOI: 10.1002/pssa.201026343

  15. Impact of growth conditions on stress and quality of aluminum nitride (AlN) thin buffer layers

    physica status solidi (b)

    Volume 253, Issue 5, May 2016, Pages: 801–808, Andrea Severino and Ferdinando Iucolano

    Version of Record online : 15 APR 2016, DOI: 10.1002/pssb.201552638

  16. Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE

    physica status solidi (b)

    Volume 253, Issue 5, May 2016, Pages: 814–818, Mitsuaki Kaneko, Tsunenobu Kimoto and Jun Suda

    Version of Record online : 15 FEB 2016, DOI: 10.1002/pssb.201552649

  17. Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications

    physica status solidi (a)

    Volume 211, Issue 12, December 2014, Pages: 2854–2860, Rolf Aidam, Elke Diwo, Birte-Julia Godejohann, Lutz Kirste, Rüdiger Quay and Oliver Ambacher

    Version of Record online : 27 AUG 2014, DOI: 10.1002/pssa.201431236

  18. Advances in III-nitride semiconductor microdisk lasers

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 960–973, Yiyun Zhang, Xuhui Zhang, Kwai Hei Li, Yuk Fai Cheung, Cong Feng and Hoi Wai Choi

    Version of Record online : 30 MAR 2015, DOI: 10.1002/pssa.201431745

  19. Self-consistent simulation of two-dimensional electron gas characteristics of a novel (InxAl1–xN/AlN) MQWs/InN/GaN heterostructure

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1263–1268, Wei Li, Quan Wang, Cuimei Wang, Haibo Yin, Junda Yan, Jiamin Gong, Baiquan Li, Xiaoliang Wang and Zhanguo Wang

    Version of Record online : 3 FEB 2016, DOI: 10.1002/pssa.201532778

  20. GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1195–1200, Mateusz Wośko, Bogdan Paszkiewicz, Andrej Vincze, Tomasz Szymański and Regina Paszkiewicz

    Version of Record online : 21 JAN 2015, DOI: 10.1002/pssb.201451596