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There are 3933 results for: content related to: Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory

  1. Resistive-Switching Memory

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Daniele Ielmini

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W8222

  2. Resistive Switching Memory Devices Based on Proteins

    Advanced Materials

    Volume 27, Issue 46, December 9, 2015, Pages: 7670–7676, Hong Wang, Fanben Meng, Bowen Zhu, Wan Ru Leow, Yaqing Liu and Xiaodong Chen

    Version of Record online : 5 MAR 2015, DOI: 10.1002/adma.201405728

  3. Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 6, June 2015, Pages: 362–365, Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi and Cheol Seong Hwang

    Version of Record online : 6 MAY 2015, DOI: 10.1002/pssr.201510110

  4. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

    Advanced Functional Materials

    Volume 24, Issue 34, September 10, 2014, Pages: 5316–5339, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Kyung Jean Yoon, Tae Hyung Park, Dae Eun Kwon, Hyungkwang Lim, Gun Hwan Kim, Doo Seok Jeong and Cheol Seong Hwang

    Version of Record online : 3 JUL 2014, DOI: 10.1002/adfm.201303520

  5. Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

    Advanced Materials

    Volume 21, Issue 25-26, July 13, 2009, Pages: 2632–2663, Rainer Waser, Regina Dittmann, Georgi Staikov and Kristof Szot

    Version of Record online : 6 JUL 2009, DOI: 10.1002/adma.200900375

  6. Resistive switching characteristics of TiN/MnO2/Pt memory devices

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 8-9, September 2010, Pages: 233–235, Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko and Jeon-kook Lee

    Version of Record online : 21 JUL 2010, DOI: 10.1002/pssr.201004213

  7. Composition dependence of unipolar resistance switching in TaOx thin films

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 7, July 2011, Pages: 253–255, F. Kurnia, Hadiyawarman, C. U. Jung, Ranju Jung and Chunli Liu

    Version of Record online : 14 JUN 2011, DOI: 10.1002/pssr.201105253

  8. Textile Resistance Switching Memory for Fabric Electronics

    Advanced Functional Materials

    Volume 27, Issue 15, April 18, 2017, Anjae Jo, Youngdae Seo, Museok Ko, Chaewon Kim, Heejoo Kim, Seungjin Nam, Hyunjoo Choi, Cheol Seong Hwang and Mi Jung Lee

    Version of Record online : 28 FEB 2017, DOI: 10.1002/adfm.201605593

  9. Resistive-Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires

    Small

    Volume 7, Issue 20, October 17, 2011, Pages: 2899–2905, Carlo Cagli, Federico Nardi, Bruce Harteneck, Zhongkui Tan, Yuegang Zhang and Daniele Ielmini

    Version of Record online : 23 AUG 2011, DOI: 10.1002/smll.201101157

  10. Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory

    Advanced Functional Materials

    Volume 21, Issue 9, May 10, 2011, Pages: 1587–1592, Kyung Min Kim, Seul Ji Song, Gun Hwan Kim, Jun Yeong Seok, Min Hwan Lee, Jung Ho Yoon, Jucheol Park and Cheol Seong Hwang

    Version of Record online : 11 MAR 2011, DOI: 10.1002/adfm.201002282

  11. Alcohol-Mediated Resistance-Switching Behavior in Metal–Organic Framework-Based Electronic Devices

    Angewandte Chemie International Edition

    Volume 55, Issue 31, July 25, 2016, Pages: 8884–8888, Dr. Yaqing Liu, Dr. Hong Wang, Dr. Wenxiong Shi, Dr. Weina Zhang, Dr. Jiancan Yu, Bevita K. Chandran, Chenlong Cui, Bowen Zhu, Zhiyuan Liu, Dr. Bin Li, Cai Xu, Zhiling Xu, Prof. Shuzhou Li, Prof. Wei Huang, Prof. Fengwei Huo and Prof. Xiaodong Chen

    Version of Record online : 17 JUN 2016, DOI: 10.1002/anie.201602499

  12. Characteristics and mechanism of nano-polycrystalline La2O3 thin-film resistance switching memory

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 11, November 2013, Pages: 1005–1008, Hongbin Zhao, Hailing Tu, Feng Wei, Yuhua Xiong, Xinqaing Zhang and Jun Du

    Version of Record online : 29 AUG 2013, DOI: 10.1002/pssr.201308068

  13. Self-Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance

    Advanced Functional Materials

    Volume 25, Issue 10, March 11, 2015, Pages: 1527–1534, Kyung Min Kim, Seung Ryul Lee, Sungho Kim, Man Chang and Cheol Seong Hwang

    Version of Record online : 23 JAN 2015, DOI: 10.1002/adfm.201403621

  14. Magnetron Sputtered Ni-rich Nickel Oxide Nano-Films for Resistive Switching Memory Applications

    International Journal of Applied Ceramic Technology

    Volume 10, Issue 1, January/February 2013, Pages: 20–25, Zhen Liu, Tu pei Chen, Yang Liu and Sam Zhang

    Version of Record online : 7 SEP 2012, DOI: 10.1111/j.1744-7402.2012.02798.x

  15. Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

    Advanced Electronic Materials

    Kyung Jean Yoon, Gun Hwan Kim, Sijung Yoo, Woorham Bae, Jung Ho Yoon, Tae Hyung Park, Dae Eun Kwon, Yeong Jae Kwon, Hae Jin Kim, Yu Min Kim and Cheol Seong Hwang

    Version of Record online : 17 MAY 2017, DOI: 10.1002/aelm.201700152

  16. 3D Cross-Point Array Memory

    Vertical 3D Memory Technologies

    Betty Prince, Pages: 192–274, 2014

    Published Online : 25 JUL 2014, DOI: 10.1002/9781118760475.ch05

  17. Improvement of resistance switching properties for metal/La0.7Ca0.3MnO3/Pt devices

    physica status solidi (a)

    Volume 208, Issue 5, May 2011, Pages: 1041–1046, Rui Yang and Xiaomin Li

    Version of Record online : 10 MAR 2011, DOI: 10.1002/pssa.201000079

  18. High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures

    Advanced Materials

    Volume 19, Issue 13, July, 2007, Pages: 1711–1713, K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, T. Ohnishi, M. Lippmaa and H. Koinuma

    Version of Record online : 30 MAY 2007, DOI: 10.1002/adma.200601957

  19. Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

    Advanced Materials

    Volume 24, Issue 26, July 10, 2012, Pages: 3573–3576, Jaewon Jang, Feng Pan, Kyle Braam and Vivek Subramanian

    Version of Record online : 12 JUN 2012, DOI: 10.1002/adma.201200671

  20. Alcohol-Mediated Resistance-Switching Behavior in Metal–Organic Framework-Based Electronic Devices

    Angewandte Chemie

    Volume 128, Issue 31, July 25, 2016, Pages: 9030–9034, Dr. Yaqing Liu, Dr. Hong Wang, Dr. Wenxiong Shi, Dr. Weina Zhang, Dr. Jiancan Yu, Bevita K. Chandran, Chenlong Cui, Bowen Zhu, Zhiyuan Liu, Dr. Bin Li, Cai Xu, Zhiling Xu, Prof. Shuzhou Li, Prof. Wei Huang, Prof. Fengwei Huo and Prof. Xiaodong Chen

    Version of Record online : 17 JUN 2016, DOI: 10.1002/ange.201602499