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There are 19429 results for: content related to: Electrochemistry of Nanocrystalline 3C Silicon Carbide Films

  1. Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD

    Chemical Vapor Deposition

    Volume 19, Issue 1-3, March 2013, Pages: 29–37, Hao Zhuang, Lei Zhang, Thorsten Staedler and Xin Jiang

    Version of Record online : 18 FEB 2013, DOI: 10.1002/cvde.201207011

  2. Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide

    Journal of the American Ceramic Society

    Volume 94, Issue 12, December 2011, Pages: 4127–4130, Weilin Jiang, Liang Jiao and Haiyan Wang

    Version of Record online : 12 OCT 2011, DOI: 10.1111/j.1551-2916.2011.04887.x

  3. Anomalous Dynamical Charge Change Behavior of Nanocrystalline 3C-SiC upon Compression

    Journal of the American Ceramic Society

    Volume 87, Issue 12, December 2004, Pages: 2291–2293, Haozhe Liu, Changqing Jin, Jiuhua Chen and Jingzhu Hu

    Version of Record online : 10 FEB 2005, DOI: 10.1111/j.1151-2916.2004.tb07508.x

  4. Surface Science Contribution to the BEN Control on Si(100) and 3C-SiC(100): Towards Ultrathin Nanocrystalline Diamond Films

    Chemical Vapor Deposition

    Volume 14, Issue 7-8, July/August 2008, Pages: 187–195, Jean-Charles Arnault, Samuel Saada, Sophie Delclos, Licinio Rocha, Luciana Intiso, Riccardo Polini, Alon Hoffman, Shaul Michaelson and Philippe Bergonzo

    Version of Record online : 15 AUG 2008, DOI: 10.1002/cvde.200706659

  5. Saddle-shape warpage of thick 3C-SiC wafer: Effect of nonuniform intrinsic stress and stacking faults

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 555–559, Yu Sun, Satoshi Izumi, Shinsuke Sakai, Kuniaki Yagi and Hiroyuki Nagasawa

    Version of Record online : 18 OCT 2011, DOI: 10.1002/pssb.201147341

  6. Low-Temperature PECVD of Nanodevice-Grade nc-3C-SiC

    Chemical Vapor Deposition

    Volume 13, Issue 10, October, 2007, Pages: 561–566, Q. J. Cheng, S. Y. Xu, J. D. Long and K. Ostrikov

    Version of Record online : 11 OCT 2007, DOI: 10.1002/cvde.200706624

  7. CVD Growth of 3C-SiC on 4H/6H Mesas

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 531–540, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang and M. Dudley

    Version of Record online : 21 AUG 2006, DOI: 10.1002/cvde.200506460

  8. Crystal recovery from Al-implantation induced damaging in 3C-SiC films

    physica status solidi (RRL) - Rapid Research Letters

    Volume 6, Issue 5, May 2012, Pages: 226–228, Andrea Severino, Nicolò Piluso, Antonio Marino and Francesco La Via

    Version of Record online : 18 APR 2012, DOI: 10.1002/pssr.201206064

  9. Growth of SiC on Porous SiC Buffer Layers

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    S. E. Saddow, R. L. Myers-Ward, Y. Shishkin, Pages: 55–75, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch3

  10. Intrinsic Defects in Cubic Silicon Carbide

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 173–198, H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura and S. Yoshida

    Version of Record online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<173::AID-PSSA173>3.0.CO;2-W

  11. Micro- and nanomechanical structures for silicon carbide MEMS and NEMS

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1404–1424, Christian A. Zorman and Rocco J. Parro

    Version of Record online : 10 JUN 2008, DOI: 10.1002/pssb.200844135

  12. Very low dose ion-implantation effect on heteroepitaxial 3C-SiC mechanical properties

    physica status solidi (a)

    Volume 209, Issue 11, November 2012, Pages: 2235–2240, R. Anzalone, N. Piluso, A. Marino, A. Sciuto and G. D'Arrigo

    Version of Record online : 21 AUG 2012, DOI: 10.1002/pssa.201228249

  13. Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Christian A. Zorman, Rocco J. Parro, Pages: 411–451, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch17

  14. Heteroepitaxial growth of cubic SiC on Si using very-high-frequency plasma at atmospheric pressure

    Surface and Interface Analysis

    Volume 40, Issue 6-7, June - July 2008, Pages: 974–978, Hiroaki Kakiuchi, Hiromasa Ohmi, Masatoshi Aketa, Ryota Nakamura and Kiyoshi Yasutake

    Version of Record online : 26 MAR 2008, DOI: 10.1002/sia.2814

  15. Evaluations of crystal defects of 3C-SiC(1¯1¯1¯) film on Si(110) substrate

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1125–1129, Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov and Maki Suemitsu

    Version of Record online : 29 FEB 2016, DOI: 10.1002/pssa.201532675

  16. Surface energy of Si(110)- and 3C-SiC(111)-terminated surfaces

    physica status solidi (b)

    Volume 251, Issue 7, July 2014, Pages: 1408–1415, Eric K. K. Abavare, Jun-Ichi Iwata, Abu Yaya and Atsushi Oshiyama

    Version of Record online : 19 MAY 2014, DOI: 10.1002/pssb.201350335

  17. Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates

    physica status solidi (c)

    Volume 2, Issue 4, March 2005, Pages: 1284–1287, Ch. Zgheib, M. Kazan, P. Weih, O. Ambacher, P. Masri and J. Pezoldt

    Version of Record online : 4 MAR 2005, DOI: 10.1002/pssc.200460427

  18. Group IV Nanoparticles: Synthesis, Properties, and Biological Applications


    Volume 6, Issue 19, October 4, 2010, Pages: 2080–2098, Jiyang Fan and Paul K. Chu

    Version of Record online : 20 AUG 2010, DOI: 10.1002/smll.201000543

  19. Nondestructive evaluation of high-temperature elastic modulus of 3C-SiC using Raman scattering

    Journal of Raman Spectroscopy

    Volume 43, Issue 7, July 2012, Pages: 945–948, X. Zhao, F. Yang, H. Zhang and P. Xiao

    Version of Record online : 22 DEC 2011, DOI: 10.1002/jrs.3119

  20. Reducing Planar Defects in 3C–SiC

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 502–508, H. Nagasawa, K. Yagi, T. Kawahara and N. Hatta

    Version of Record online : 21 AUG 2006, DOI: 10.1002/cvde.200506466