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There are 21280 results for: content related to: Electrochemistry of Nanocrystalline 3C Silicon Carbide Films

  1. Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD

    Chemical Vapor Deposition

    Volume 19, Issue 1-3, March 2013, Pages: 29–37, Hao Zhuang, Lei Zhang, Thorsten Staedler and Xin Jiang

    Article first published online : 18 FEB 2013, DOI: 10.1002/cvde.201207011

  2. Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide

    Journal of the American Ceramic Society

    Volume 94, Issue 12, December 2011, Pages: 4127–4130, Weilin Jiang, Liang Jiao and Haiyan Wang

    Article first published online : 12 OCT 2011, DOI: 10.1111/j.1551-2916.2011.04887.x

  3. Micro- and nanomechanical structures for silicon carbide MEMS and NEMS

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1404–1424, Christian A. Zorman and Rocco J. Parro

    Article first published online : 10 JUN 2008, DOI: 10.1002/pssb.200844135

  4. Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Christian A. Zorman, Rocco J. Parro, Pages: 411–451, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch17

  5. CVD Growth of 3C-SiC on 4H/6H Mesas

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 531–540, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang and M. Dudley

    Article first published online : 21 AUG 2006, DOI: 10.1002/cvde.200506460

  6. Saddle-shape warpage of thick 3C-SiC wafer: Effect of nonuniform intrinsic stress and stacking faults

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 555–559, Yu Sun, Satoshi Izumi, Shinsuke Sakai, Kuniaki Yagi and Hiroyuki Nagasawa

    Article first published online : 18 OCT 2011, DOI: 10.1002/pssb.201147341

  7. Intrinsic Defects in Cubic Silicon Carbide

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 173–198, H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura and S. Yoshida

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<173::AID-PSSA173>3.0.CO;2-W

  8. Crystal recovery from Al-implantation induced damaging in 3C-SiC films

    physica status solidi (RRL) - Rapid Research Letters

    Volume 6, Issue 5, May 2012, Pages: 226–228, Andrea Severino, Nicolò Piluso, Antonio Marino and Francesco La Via

    Article first published online : 18 APR 2012, DOI: 10.1002/pssr.201206064

  9. Low-Temperature PECVD of Nanodevice-Grade nc-3C-SiC

    Chemical Vapor Deposition

    Volume 13, Issue 10, October, 2007, Pages: 561–566, Q. J. Cheng, S. Y. Xu, J. D. Long and K. Ostrikov

    Article first published online : 11 OCT 2007, DOI: 10.1002/cvde.200706624

  10. Very low dose ion-implantation effect on heteroepitaxial 3C-SiC mechanical properties

    physica status solidi (a)

    Volume 209, Issue 11, November 2012, Pages: 2235–2240, R. Anzalone, N. Piluso, A. Marino, A. Sciuto and G. D'Arrigo

    Article first published online : 21 AUG 2012, DOI: 10.1002/pssa.201228249

  11. Heteroepitaxial growth of cubic SiC on Si using very-high-frequency plasma at atmospheric pressure

    Surface and Interface Analysis

    Volume 40, Issue 6-7, June - July 2008, Pages: 974–978, Hiroaki Kakiuchi, Hiromasa Ohmi, Masatoshi Aketa, Ryota Nakamura and Kiyoshi Yasutake

    Article first published online : 26 MAR 2008, DOI: 10.1002/sia.2814

  12. Growth of SiC on Porous SiC Buffer Layers

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    S. E. Saddow, R. L. Myers-Ward, Y. Shishkin, Pages: 55–75, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch3

  13. Anomalous Dynamical Charge Change Behavior of Nanocrystalline 3C-SiC upon Compression

    Journal of the American Ceramic Society

    Volume 87, Issue 12, December 2004, Pages: 2291–2293, Haozhe Liu, Changqing Jin, Jiuhua Chen and Jingzhu Hu

    Article first published online : 10 FEB 2005, DOI: 10.1111/j.1151-2916.2004.tb07508.x

  14. Changes in chemical composition and nanostructure of SiC thin films prepared by PECVD during thermal annealing

    physica status solidi (a)

    Volume 208, Issue 8, August 2011, Pages: 1885–1895, Matthias Künle, Stefan Janz, Klaus Georg Nickel and Oliver Eibl

    Article first published online : 12 APR 2011, DOI: 10.1002/pssa.201026649

  15. Surface energy of Si(110)- and 3C-SiC(111)-terminated surfaces

    physica status solidi (b)

    Volume 251, Issue 7, July 2014, Pages: 1408–1415, Eric K. K. Abavare, Jun-Ichi Iwata, Abu Yaya and Atsushi Oshiyama

    Article first published online : 19 MAY 2014, DOI: 10.1002/pssb.201350335

  16. Isotopically-Purified Si and 3C-SiC Film Growth by an Ion-Beam Deposition Method

    physica status solidi (a)

    Volume 189, Issue 1, January 2002, Pages: 169–174, N. Tsubouchi, A. Chayahara, Y. Mokuno, A. Kinomura and Y. Horino

    Article first published online : 24 JAN 2002, DOI: 10.1002/1521-396X(200201)189:1<169::AID-PSSA169>3.0.CO;2-6

  17. High-Speed Preparation of <111>- and <110>-Oriented β-SiC Films by Laser Chemical Vapor Deposition

    Journal of the American Ceramic Society

    Volume 97, Issue 3, March 2014, Pages: 952–958, Song Zhang, Qingfang Xu, Rong Tu, Takashi Goto and Lianmeng Zhang

    Article first published online : 14 DEC 2013, DOI: 10.1111/jace.12706

  18. AlN/3C–SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators

    Advanced Materials

    Volume 24, Issue 20, May 22, 2012, Pages: 2722–2727, Chih-Ming Lin, Yung-Yu Chen, Valery V. Felmetsger, Debbie G. Senesky and Albert P. Pisano

    Article first published online : 12 APR 2012, DOI: 10.1002/adma.201104842

  19. Morphological evolution, Raman and photoluminescence spectra in optically transparent cubic silicon carbide

    Advanced Materials for Optics and Electronics

    Volume 7, Issue 4, July 1997, Pages: 195–206, Michael W. Russell, Jaime A. Freitas Jr., W. James Moore and James E. Butler

    Article first published online : 4 DEC 1998, DOI: 10.1002/(SICI)1099-0712(199707)7:4<195::AID-AMO306>3.0.CO;2-4

  20. Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1983–1985, Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne

    Article first published online : 18 APR 2008, DOI: 10.1002/pssc.200778641