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There are 9684 results for: content related to: Photoelectrochemical Scanning Droplet Cell Microscopy (PE-SDCM)

  1. Review of near-field thermal radiation and its application to energy conversion

    International Journal of Energy Research

    Volume 33, Issue 13, 25 October 2009, Pages: 1203–1232, S. Basu, Z. M. Zhang and C. J. Fu

    Article first published online : 2 SEP 2009, DOI: 10.1002/er.1607

  2. Development of B-doped Si multiple delta-layer reference materials for SIMS profiling

    Surface and Interface Analysis

    Volume 37, Issue 10, October 2005, Pages: 802–808, K. J. Kim, D. W. Moon, P. Chi and D. Simons

    Article first published online : 2 SEP 2005, DOI: 10.1002/sia.2080

  3. Development of flame retardancy properties of new halogen-free phosphorous doped SiO2 thin films on fabrics

    Journal of Applied Polymer Science

    Volume 105, Issue 6, 15 September 2007, Pages: 3748–3756, Aysun Cireli, Nurhan Onar, M. Faruk Ebeoglugil, Isil Kayatekin, Bengi Kutlu, Osman Culha and Erdal Celik

    Article first published online : 11 JUN 2007, DOI: 10.1002/app.26442

  4. Resolution of Major Deep Levels in Au- and Pt-Doped Si

    physica status solidi (a)

    Volume 125, Issue 2, 16 June 1991, Pages: 741–748, S. E. Hartson and N. C. Halder

    Article first published online : 4 APR 2006, DOI: 10.1002/pssa.2211250233

  5. The electronic structure of the bound exciton and bound multiexciton complexes in Al-doped Si

    physica status solidi (b)

    Volume 92, Issue 2, 1 April 1979, Pages: 455–465, V. D. Kulakovskii and A. V. Malyavkin

    Article first published online : 8 FEB 2006, DOI: 10.1002/pssb.2220920214

  6. SIMS depth profiling analysis of P-doped n-type Si layer to develop the Si QD solar cell

    Surface and Interface Analysis

    Volume 46, Issue S1, November 2014, Pages: 341–343, Tae Woon Kim, Hyun Jeong Baek, Jong Shik Jang, Seung Mi Lee and Kyung Joong Kim

    Article first published online : 11 FEB 2014, DOI: 10.1002/sia.5407

  7. Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing

    physica status solidi (a)

    Volume 209, Issue 12, December 2012, Pages: 2521–2526, Shaoxu Hu, Peide Han, Shuai Wang, Xue Mao, Xinyi Li and Lipeng Gao

    Article first published online : 18 SEP 2012, DOI: 10.1002/pssa.201228202

  8. Fabrication of Reproducible, Integration-Compatible Hybrid Molecular/Si Electronics


    Volume 10, Issue 24, December 29, 2014, Pages: 5151–5160, Xi Yu, Robert Lovrinčić, Olga Kraynis, Gabriel Man, Tal Ely, Arava Zohar, Tal Toledano, David Cahen and Ayelet Vilan

    Article first published online : 5 AUG 2014, DOI: 10.1002/smll.201400484

  9. Electronic states in B δ-doped Si quantum well

    physica status solidi (b)

    Volume 197, Issue 1, 1 September 1996, Pages: 105–109, L. M. Gaggero-Sager and R. Pérez-Alvarez

    Article first published online : 15 FEB 2006, DOI: 10.1002/pssb.2221970116

  10. Improved nanocrystal formation, quantum confinement and carrier transport properties of doped Si quantum dot superlattices for third generation photovoltaics

    Progress in Photovoltaics: Research and Applications

    Volume 21, Issue 4, June 2013, Pages: 569–577, Dawei Di, Heli Xu, Ivan Perez-Wurfl, Martin A. Green and Gavin Conibeer

    Article first published online : 16 NOV 2011, DOI: 10.1002/pip.1230

  11. Metal-Assisted Chemical Etching of Silicon: A Review

    Advanced Materials

    Volume 23, Issue 2, January 11, 2011, Pages: 285–308, Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor and Ulrich Gösele

    Article first published online : 21 SEP 2010, DOI: 10.1002/adma.201001784

  12. The Geometric Structure of Silver-Doped Silicon Clusters


    Volume 15, Issue 2, February 3, 2014, Pages: 328–336, Yejun Li, Prof. Jonathan T. Lyon, Alex P. Woodham, Dr. André Fielicke and Prof. Ewald Janssens

    Article first published online : 8 JAN 2014, DOI: 10.1002/cphc.201300944

  13. Metal-Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure

    physica status solidi (b)

    Volume 198, Issue 1, 1 November 1996, Pages: 149–152, V. V. Baidakov, V. N. Ermakov, A. E. Gorin, V. V. Kolomoets, N. V. Stuchinska, V. A. Shenderovskii and D. P. Tunstall

    Article first published online : 19 FEB 2006, DOI: 10.1002/pssb.2221980121

  14. Amplified spontaneous emission of Eu(DBM)3Phen doped step-index polymer optical fiber by end-pumping with a YAG

    Journal of Applied Polymer Science

    Volume 98, Issue 2, 15 October 2005, Pages: 912–916, Hao Liang, Biao Chen, Qijin Zhang, Zhiqiang Zheng, Hai Ming and Fuquan Guo

    Article first published online : 29 JUL 2005, DOI: 10.1002/app.22200

  15. High-Temperature Properties of Transition Elements in Silicon

    Standard Article

    Materials Science and Technology

    Wolfgang Schröter, Michael Seibt and Dieter Gilles

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0251

  16. Generation and suppression of misfit dislocations at the seed/crystal interface in Si bulk crystal growth

    physica status solidi (c)

    Volume 6, Issue 8, August 2009, Pages: 1886–1891, Toshinori Taishi, Keigo Hoshikawa, Yutaka Ohno and Ichiro Yonenaga

    Article first published online : 9 JUN 2009, DOI: 10.1002/pssc.200881433

  17. Optical Properties of Heavily Al-Doped Single-Crystal Si3N4 Nanobelts

    Journal of the American Ceramic Society

    Volume 93, Issue 5, May 2010, Pages: 1364–1367, Fengmei Gao, Yansong Wang, Ligong Zhang, Weiyou Yang and Linan An

    Article first published online : 14 JAN 2010, DOI: 10.1111/j.1551-2916.2009.03517.x

  18. Thermoelectric properties of Mg2Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

    physica status solidi (a)

    Volume 211, Issue 6, June 2014, Pages: 1308–1314, D. Stathokostopoulos, E. C. Stefanaki, M. Ioannou, G. S. Polymeris, D. Chaliampalias, E. Pavlidou, Th. Kyratsi, K. M. Paraskevopoulos, G. Vourlias and E. Hatzikraniotis

    Article first published online : 9 APR 2014, DOI: 10.1002/pssa.201300140

  19. OTFT Integration Strategies

    Organic Thin Film Transistor Integration: A Hybrid Approach

    Flora M. Li, Arokia Nathan, Yiliang Wu, Beng S. Ong, Pages: 55–100, 2011

    Published Online : 12 APR 2011, DOI: 10.1002/9783527634446.ch3

  20. In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD

    Surface and Interface Analysis

    Volume 40, Issue 6-7, June - July 2008, Pages: 984–987, Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchi and K. Yasutake

    Article first published online : 7 MAR 2008, DOI: 10.1002/sia.2835