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There are 27566 results for: content related to: Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N + Ion Implantation

  1. Epitaxial Lateral Overgrowth of GaN

    physica status solidi (b)

    Volume 227, Issue 1, September 2001, Pages: 1–43, B. Beaumont, Ph. Vennéguès and P. Gibart

    Version of Record online : 5 SEP 2001, DOI: 10.1002/1521-3951(200109)227:1<1::AID-PSSB1>3.0.CO;2-Q

  2. Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon

    physica status solidi (c)

    Volume 0, Issue 6, September 2003, Pages: 1583–1606, A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen and A. Krost

    Version of Record online : 5 AUG 2003, DOI: 10.1002/pssc.200303122

  3. Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 2087–2090, In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov and S. J. Pearton

    Version of Record online : 10 MAY 2006, DOI: 10.1002/pssc.200565195

  4. Epitaxial Lateral Overgrowth of GaN on Silicon (111)

    physica status solidi (a)

    Volume 188, Issue 2, December 2001, Pages: 733–737, E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie and P. Gibart

    Version of Record online : 23 NOV 2001, DOI: 10.1002/1521-396X(200112)188:2<733::AID-PSSA733>3.0.CO;2-F

  5. Properties of Homoepitaxial and Heteroepitaxial GaN Layers Grown by Plasma-Assisted MBE

    physica status solidi (a)

    Volume 176, Issue 1, November 1999, Pages: 447–452, M. A. Sánchez-García, F. B. Naranjo, J. L. Pau, A. Jiménez, E. Calleja, E. Muñoz, S. I. Molina, A. M. Sánchez, F. J. Pacheco and R. García

    Version of Record online : 22 NOV 1999, DOI: 10.1002/(SICI)1521-396X(199911)176:1<447::AID-PSSA447>3.0.CO;2-A

  6. Evolution with Temperature of the Strain State of GaN Thin Layers Grown on Different Substrates

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 713–717, E. Deleporte, C. Guénaud, M. Voos, B. Beaumont and P. Gibart

    Version of Record online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<713::AID-PSSB713>3.0.CO;2-S

  7. Bowing of thick GaN layers grown by HVPE using ELOG

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1466–1470, Ch. Hennig, E. Richter, U. Zeimer, M. Weyers and G. Tränkle

    Version of Record online : 24 MAY 2006, DOI: 10.1002/pssc.200565402

  8. Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1624–1626, Kai Cheng, V. Motsnyi, M. Leys, S. Degroote, B. Sijmus, M. Germain and G. Borghs

    Version of Record online : 11 APR 2008, DOI: 10.1002/pssc.200778547

  9. Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy

    physica status solidi (a)

    Volume 188, Issue 2, December 2001, Pages: 531–535, E. Feltin , B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, M. Leroux and P. Gibart

    Version of Record online : 23 NOV 2001, DOI: 10.1002/1521-396X(200112)188:2<531::AID-PSSA531>3.0.CO;2-V

  10. Epitaxial lateral overgrowth of thick semipolar {11equation image2} GaN by hydride vapor phase epitaxy

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 549–552, Yasuhiro Hashimoto, Hiroshi Furuya, Motohisa Ueno, Keisuke Yamane, Narihito Okada and Kazuyuki Tadatomo

    Version of Record online : 4 FEB 2014, DOI: 10.1002/pssc.201300483

  11. Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 445–448, Xingbin Li, Tongjun Yu, Yuebin Tao, Junjing Deng, Chenglong Xu and Guoyi Zhang

    Version of Record online : 7 DEC 2011, DOI: 10.1002/pssc.201100409

  12. Microstructure of III-N semiconductors related to their applications in optoelectronics

    physica status solidi (c)

    Volume 2, Issue 4, March 2005, Pages: 1366–1373, M. Leszczynski, R. Czernetzki, M. Sarzynski, M. Krysko, G. Targowski, P. Prystawko, M. Bockowski, I. Grzegory, T. Suski, J. Domagala and S. Porowski

    Version of Record online : 4 MAR 2005, DOI: 10.1002/pssc.200460459

  13. You have free access to this content
    Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

    physica status solidi (b)

    Volume 253, Issue 1, January 2016, Pages: 36–45, Yasuhiro Hashimoto, Keisuke Yamane, Narihito Okada and Kazuyuki Tadatomo

    Version of Record online : 14 AUG 2015, DOI: 10.1002/pssb.201552271

  14. Optical micro-characterization of group-III-nitrides: correlation of structural, electronic and optical properties

    physica status solidi (c)

    Volume 0, Issue 6, September 2003, Pages: 1795–1815, J. Christen, T. Riemann, F. Bertram, D. Rudloff, P. Fischer, A. Kaschner, U. Haboeck, A. Hoffmann and C. Thomsen

    Version of Record online : 27 AUG 2003, DOI: 10.1002/pssc.200303125

  15. Substrates for III-Nitride-Based Electroluminescent Diodes

    LEDs for Lighting Applications

    Patrick Mottier, Pages: 29–73, 2010

    Published Online : 5 JAN 2010, DOI: 10.1002/9780470612019.ch2

  16. GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    J. Xie, Y. Fu, Ü. Özgür, H. Morkoç, Pages: 121–170, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch6

  17. Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1585–1588, K. Y. Zang and S. J. Chua

    Version of Record online : 1 APR 2008, DOI: 10.1002/pssc.200778509

  18. Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten

    physica status solidi (c)

    Volume 4, Issue 7, June 2007, Pages: 2638–2641, Ch. Hennig, E. Richter, M. Weyers and G. Tränkle

    Version of Record online : 1 JUN 2007, DOI: 10.1002/pssc.200674855

  19. Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN

    physica status solidi (a)

    Volume 176, Issue 1, November 1999, Pages: 141–145, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, F. Omnès and P. Gibart

    Version of Record online : 22 NOV 1999, DOI: 10.1002/(SICI)1521-396X(199911)176:1<141::AID-PSSA141>3.0.CO;2-9

  20. Semi-polar nitride surfaces and heterostructures

    physica status solidi (b)

    Volume 248, Issue 3, March 2011, Pages: 561–573, André Strittmatter, John E. Northrup, Noble M. Johnson, Mikhail V. Kisin, Philippe Spiberg, Hussein El-Ghoroury, Alexander Usikov and Alexander Syrkin

    Version of Record online : 20 OCT 2010, DOI: 10.1002/pssb.201046422