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There are 4675 results for: content related to: Atomic Layer Deposition of HfO 2 Thin Films Employing a Heteroleptic Hafnium Precursor

  1. Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium-Cyclopentadienyl Precursors

    Chemical Vapor Deposition

    Volume 13, Issue 11, November, 2007, Pages: 609–617, R. O'Kane, J. Gaskell, A. C. Jones, P. R. Chalker, K. Black, M. Werner, P. Taechakumput, S. Taylor, P. N. Heys and R. Odedra

    Version of Record online : 20 NOV 2007, DOI: 10.1002/cvde.200706589

  2. ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4

    Chemical Vapor Deposition

    Volume 12, Issue 11, November, 2006, Pages: 665–669, W. Cho, K.-S. An, T.-M. Chung, C. G. Kim, B.-S. So, Y.-H. You, J.-H. Hwang, D. Jung and Y. Kim

    Version of Record online : 16 NOV 2006, DOI: 10.1002/cvde.200506458

  3. Enhanced Performance of Supported HfO2 Counter Electrodes for Redox Couples Used in Dye-Sensitized Solar Cells


    Volume 7, Issue 2, February 2014, Pages: 442–450, Prof. Dr. Sining Yun, Dr. Haihui Pu, Prof. Junhong Chen, Prof. Anders Hagfeldt and Prof. Tingli Ma

    Version of Record online : 7 JAN 2014, DOI: 10.1002/cssc.201301140

  4. Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO2 film on Ge substrate for interface passivation

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 9, September 2015, Pages: 511–515, Deok-Yong Cho, Tae Jun Seok, Hyun Soo Jin, Hochul Song, Seungwu Han and Tae Joo Park

    Version of Record online : 7 SEP 2015, DOI: 10.1002/pssr.201510237

  5. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

    Advanced Materials

    Volume 27, Issue 11, March 18, 2015, Pages: 1811–1831, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Johannes Müller, Alfred Kersch, Uwe Schroeder, Thomas Mikolajick and Cheol Seong Hwang

    Version of Record online : 11 FEB 2015, DOI: 10.1002/adma.201404531

  6. High-Temperature Oxidation at 1500° and 1600°C of SiC/Graphite Coated with Sol–Gel-Derived HfO2

    Journal of the American Ceramic Society

    Volume 88, Issue 4, April 2005, Pages: 845–849, Shiro Shimada and Takeshi Aketo

    Version of Record online : 17 MAR 2005, DOI: 10.1111/j.1551-2916.2005.00202.x

  7. Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO2 on InP

    physica status solidi (RRL) - Rapid Research Letters

    Volume 6, Issue 5, May 2012, Pages: 211–213, Chee-Hong An, Young-Chul Byun, Myung Soo Lee and Hyoungsub Kim

    Version of Record online : 4 APR 2012, DOI: 10.1002/pssr.201206109

  8. Atomic Layer Deposition, Characterization, and Dielectric Properties of HfO2/SiO2 Nanolaminates and Comparisons with Their Homogeneous Mixtures

    Chemical Vapor Deposition

    Volume 12, Issue 2-3, March, 2006, Pages: 143–150, L. Zhong, W. L. Daniel, Z. Zhang, S. A. Campbell and W. L. Gladfelter

    Version of Record online : 22 MAR 2006, DOI: 10.1002/cvde.200506375

  9. Heteroleptic Guanidinate- and Amidinate-Based Complexes of Hafnium as New Precursors for MOCVD of HfO2

    European Journal of Inorganic Chemistry

    Volume 2010, Issue 11, April 2010, Pages: 1679–01688, Ke Xu, Andrian P. Milanov, Manuela Winter, Davide Barreca, Alberto Gasparotto, Hans-Werner Becker and Anjana Devi

    Version of Record online : 9 MAR 2010, DOI: 10.1002/ejic.200901225

  10. Effect of Hf 4+ Concentration on Oxygen Grain-Boundary Diffusion in Alumina

    Journal of the American Ceramic Society

    Volume 98, Issue 10, October 2015, Pages: 3346–3351, Qian Wu, Helen M. Chan, Jeffrey M. Rickman and Martin P. Harmer

    Version of Record online : 28 JUL 2015, DOI: 10.1111/jace.13762

  11. Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

    Advanced Functional Materials

    Volume 24, Issue 32, August 27, 2014, Pages: 5086–5095, Jung Ho Yoon, Seul Ji Song, Il-Hyuk Yoo, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park and Cheol Seong Hwang

    Version of Record online : 26 MAY 2014, DOI: 10.1002/adfm.201400064

  12. RRAMs based on anionic and cationic switching: a short overview

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 6, June 2014, Pages: 501–511, Sergiu Clima, Kiroubanand Sankaran, Yang Yin Chen, Andrea Fantini, Umberto Celano, Attilio Belmonte, Leqi Zhang, Ludovic Goux, Bogdan Govoreanu, Robin Degraeve, Dirk J. Wouters, Malgorzata Jurczak, Wilfried Vandervorst, Stefan De Gendt and Geoffrey Pourtois

    Version of Record online : 4 APR 2014, DOI: 10.1002/pssr.201409054

  13. The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source

    Chemical Vapor Deposition

    Volume 14, Issue 11-12, November/December 2008, Pages: 358–365, Charles L. Dezelah IV, Jaakko Niinistö, Kaupo Kukli, Frans Munnik, Jun Lu, Mikko Ritala, Markku Leskelä and Lauri Niinistö

    Version of Record online : 16 DEC 2008, DOI: 10.1002/cvde.200806716

  14. Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS

    physica status solidi (a)

    Volume 209, Issue 4, April 2012, Pages: 679–682, M. A. Sahiner, P. S. Lysaght, J. C. Woicik, C. S. Park, J. Huang, G. Bersuker, W. Taylor, P. D. Kirsch and R. Jammy

    Version of Record online : 22 MAR 2012, DOI: 10.1002/pssa.201100669

  15. Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer

    physica status solidi (RRL) - Rapid Research Letters

    Volume 6, Issue 6, June 2012, Pages: 247–249, Chee-Hong An, Young-Chul Byun, Mann-Ho Cho and Hyoungsub Kim

    Version of Record online : 14 MAY 2012, DOI: 10.1002/pssr.201206178

  16. Growth by Liquid-Injection MOCVD and Properties of HfO2 Films for Microelectronic Applications

    Chemical Vapor Deposition

    Volume 12, Issue 2-3, March, 2006, Pages: 187–192, C. Dubourdieu, E. Rauwel, C. Millon, P. Chaudouët, F. Ducroquet, N. Rochat, S. Rushworth and V. Cosnier

    Version of Record online : 22 MAR 2006, DOI: 10.1002/cvde.200506397

  17. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries


    Volume 11, Issue 34, September 9, 2015, Pages: 4341–4350, Bilal Ahmed, Dalaver H. Anjum, Mohamed N. Hedhili and Husam N. Alshareef

    Version of Record online : 10 JUN 2015, DOI: 10.1002/smll.201500919

  18. Energetics of La2O3–HfO2–SiO2 Glasses

    Journal of the American Ceramic Society

    Volume 91, Issue 4, April 2008, Pages: 1088–1094, Riham Michelle Morcos, Jean Tangeman, Sergey Ushakov and Alexandra Navrotsky

    Version of Record online : 5 FEB 2008, DOI: 10.1111/j.1551-2916.2008.02301.x

  19. Synthesis and White Light Emission of Rare Earth-Doped HfO2 Nanotubes

    Journal of the American Ceramic Society

    Volume 94, Issue 7, July 2011, Pages: 2141–2145, Lixin Liu, Yuan Wang, Yurong Su, Ziwei Ma, Yizhu Xie, Haiting Zhao, Changcheng Chen, Zhenxing Zhang and Erqing Xie

    Version of Record online : 14 MAR 2011, DOI: 10.1111/j.1551-2916.2010.04375.x

  20. Simultaneous Modification of Bottom-Contact Electrode and Dielectric Surfaces for Organic Thin-Film Transistors Through Single-Component Spin-Cast Monolayers

    Advanced Functional Materials

    Volume 21, Issue 8, April 22, 2011, Pages: 1476–1488, Orb Acton, Manish Dubey, Tobias Weidner, Kevin M. O’Malley, Tae-Wook Kim, Guy G. Ting, Daniel Hutchins, J. E. Baio, Tracy C. Lovejoy, Alexander H. Gage, David G. Castner, Hong Ma and Alex K.-Y. Jen

    Version of Record online : 8 FEB 2011, DOI: 10.1002/adfm.201002035