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There are 13682 results for: content related to: Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD

  1. Saddle-shape warpage of thick 3C-SiC wafer: Effect of nonuniform intrinsic stress and stacking faults

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 555–559, Yu Sun, Satoshi Izumi, Shinsuke Sakai, Kuniaki Yagi and Hiroyuki Nagasawa

    Version of Record online : 18 OCT 2011, DOI: 10.1002/pssb.201147341

  2. Electrochemistry of Nanocrystalline 3C Silicon Carbide Films

    Chemistry - A European Journal

    Volume 18, Issue 21, May 21, 2012, Pages: 6514–6519, Dr. Nianjun Yang, Dr. Hao Zhuang, René Hoffmann, Dr. Waldemar Smirnov, Jakob Hees, Prof. Xin Jiang and Dr. Christoph E. Nebel

    Version of Record online : 13 APR 2012, DOI: 10.1002/chem.201103765

  3. Survey of speech and language therapy provision for people with Parkinson's disease in the United Kingdom: patients' and carers' perspectives

    International Journal of Language & Communication Disorders

    Volume 46, Issue 2, March-April 2011, Pages: 179–188, Nick Miller, Emma Noble, Diana Jones, Katherine H. O. Deane and Catherine Gibb

    Version of Record online : 15 MAR 2011, DOI: 10.3109/13682822.2010.484850

  4. Very low dose ion-implantation effect on heteroepitaxial 3C-SiC mechanical properties

    physica status solidi (a)

    Volume 209, Issue 11, November 2012, Pages: 2235–2240, R. Anzalone, N. Piluso, A. Marino, A. Sciuto and G. D'Arrigo

    Version of Record online : 21 AUG 2012, DOI: 10.1002/pssa.201228249

  5. CVD Growth of 3C-SiC on 4H/6H Mesas

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 531–540, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang and M. Dudley

    Version of Record online : 21 AUG 2006, DOI: 10.1002/cvde.200506460

  6. Effects of protonation state of Asp181 and position of active site water molecules on the conformation of PTP1B

    Proteins: Structure, Function, and Bioinformatics

    Volume 81, Issue 5, May 2013, Pages: 788–804, Ahmet Özcan, Elif Ozkirimli Olmez and Burak Alakent

    Version of Record online : 15 JAN 2013, DOI: 10.1002/prot.24234

  7. Evaluations of crystal defects of 3C-SiC(1¯1¯1¯) film on Si(110) substrate

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1125–1129, Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov and Maki Suemitsu

    Version of Record online : 29 FEB 2016, DOI: 10.1002/pssa.201532675

  8. Crystal recovery from Al-implantation induced damaging in 3C-SiC films

    physica status solidi (RRL) - Rapid Research Letters

    Volume 6, Issue 5, May 2012, Pages: 226–228, Andrea Severino, Nicolò Piluso, Antonio Marino and Francesco La Via

    Version of Record online : 18 APR 2012, DOI: 10.1002/pssr.201206064

  9. Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates

    physica status solidi (c)

    Volume 2, Issue 4, March 2005, Pages: 1284–1287, Ch. Zgheib, M. Kazan, P. Weih, O. Ambacher, P. Masri and J. Pezoldt

    Version of Record online : 4 MAR 2005, DOI: 10.1002/pssc.200460427

  10. Numerical experiments to investigate the accuracy of broad-band moment magnitude, Mwp

    Geophysical Journal International

    Volume 187, Issue 3, December 2011, Pages: 1537–1559, Tatsuhiko Hara and Naoki Nishimura

    Version of Record online : 5 OCT 2011, DOI: 10.1111/j.1365-246X.2011.05211.x

  11. Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1983–1985, Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne

    Version of Record online : 18 APR 2008, DOI: 10.1002/pssc.200778641

  12. Growth of SiC on Porous SiC Buffer Layers

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    S. E. Saddow, R. L. Myers-Ward, Y. Shishkin, Pages: 55–75, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch3

  13. Intrinsic Defects in Cubic Silicon Carbide

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 173–198, H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura and S. Yoshida

    Version of Record online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<173::AID-PSSA173>3.0.CO;2-W

  14. Micro- and nanomechanical structures for silicon carbide MEMS and NEMS

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1404–1424, Christian A. Zorman and Rocco J. Parro

    Version of Record online : 10 JUN 2008, DOI: 10.1002/pssb.200844135

  15. Changes in chemical composition and nanostructure of SiC thin films prepared by PECVD during thermal annealing

    physica status solidi (a)

    Volume 208, Issue 8, August 2011, Pages: 1885–1895, Matthias Künle, Stefan Janz, Klaus Georg Nickel and Oliver Eibl

    Version of Record online : 12 APR 2011, DOI: 10.1002/pssa.201026649

  16. Surface morphology of Ge-modified 3C-SiC/Si films

    Surface and Interface Analysis

    Volume 40, Issue 9, September 2008, Pages: 1310–1317, Richard Nader, Michel Kazan, Elie Moussaed, Thomas Stauden, Merten Niebelschütz, Pierre Masri and Jörg Pezoldt

    Version of Record online : 21 JUL 2008, DOI: 10.1002/sia.2895

  17. MOVPE InN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111)

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2281–2284, A. Yamamoto, T. Kobayashi, T. Yamauchi, M. Sasase, A. Hashimoto and Y. Ito

    Version of Record online : 8 MAR 2005, DOI: 10.1002/pssc.200461421

  18. Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Christian A. Zorman, Rocco J. Parro, Pages: 411–451, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch17

  19. Heteroepitaxial growth of cubic SiC on Si using very-high-frequency plasma at atmospheric pressure

    Surface and Interface Analysis

    Volume 40, Issue 6-7, June - July 2008, Pages: 974–978, Hiroaki Kakiuchi, Hiromasa Ohmi, Masatoshi Aketa, Ryota Nakamura and Kiyoshi Yasutake

    Version of Record online : 26 MAR 2008, DOI: 10.1002/sia.2814

  20. Graphene growth on silicon carbide: A review

    physica status solidi (a)

    Volume 213, Issue 9, September 2016, Pages: 2277–2289, Neeraj Mishra, John Boeckl, Nunzio Motta and Francesca Iacopi

    Version of Record online : 2 JUN 2016, DOI: 10.1002/pssa.201600091