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There are 30892 results for: content related to: Phosphorus gettering of iron by screen-printed emitters in monocrystalline Czochralski silicon wafers

  1. Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities

    Progress in Photovoltaics: Research and Applications

    Volume 24, Issue 12, December 2016, Pages: 1615–1625, Supawan Joonwichien, Isao Takahashi, Kentaro Kutsukake and Noritaka Usami

    Version of Record online : 28 JUN 2016, DOI: 10.1002/pip.2795

  2. Impact of phosphorus gettering parameters and initial iron level on silicon solar cell properties

    Progress in Photovoltaics: Research and Applications

    Volume 21, Issue 5, August 2013, Pages: 1127–1135, Ville Vähänissi, Antti Haarahiltunen, Heli Talvitie, Marko Yli-Koski and Hele Savin

    Version of Record online : 2 MAY 2012, DOI: 10.1002/pip.2215

  3. Degradation and regeneration in mc-Si after different gettering steps

    Progress in Photovoltaics: Research and Applications

    Annika Zuschlag, Daniel Skorka and Giso Hahn

    Version of Record online : 26 SEP 2016, DOI: 10.1002/pip.2832

  4. Gettering in Silicon

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    S. A. McHugo and H. Hieslmair

    Published Online : 27 DEC 1999, DOI: 10.1002/047134608X.W3209

  5. Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface

    Progress in Photovoltaics: Research and Applications

    Volume 22, Issue 11, November 2014, Pages: 1118–1127, Hariharsudan Sivaramakrishnan Radhakrishnan, Frederic Dross, Maarten Debucquoy, Philipp Rosenits, Kris Van Nieuwenhuysen, Ivan Gordon, Jef Poortmans and Robert Mertens

    Version of Record online : 15 FEB 2013, DOI: 10.1002/pip.2336

  6. Gettering Processes and the Role of Extended Defects

    Advanced Silicon Materials for Photovoltaic Applications

    Michael Seibt, Vitaly Kveder, Pages: 127–188, 2012

    Published Online : 13 JUN 2012, DOI: 10.1002/9781118312193.ch4

  7. High-Temperature Properties of Transition Elements in Silicon

    Standard Article

    Materials Science and Technology

    Wolfgang Schröter, Michael Seibt and Dieter Gilles

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0251

  8. High-Temperature Properties of Transition Elements in Silicon

    Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

    Wolfgang Schröter, Michael Seibt, Dieter Gilles, Pages: 597–660, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621842.ch10

  9. Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering

    Progress in Photovoltaics: Research and Applications

    Volume 23, Issue 1, January 2015, Pages: 30–36, Yacine Boulfrad, Antti Haarahiltunen, Hele Savin, Eivind J. Øvrelid and Lars Arnberg

    Version of Record online : 1 JUL 2013, DOI: 10.1002/pip.2391

  10. High-Temperature Properties of Transition Elements in Silicon

    Handbook of Semiconductor Technology Set

    Wolfgang Schröter, Michael Seibt, Dieter Gilles, Pages: 597–660, 2008

    Published Online : 4 JUN 2008, DOI: 10.1002/9783527619290.ch10

  11. Gettering in multicrystalline silicon wafers with screen-printed emitters

    Progress in Photovoltaics: Research and Applications

    Volume 19, Issue 8, December 2011, Pages: 946–953, T.M. Pletzer, E.F.R. Stegemann, H. Windgassen, S. Suckow, D.L. Bätzner and H. Kurz

    Version of Record online : 23 FEB 2011, DOI: 10.1002/pip.1099

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    Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    Progress in Photovoltaics: Research and Applications

    Volume 24, Issue 1, January 2016, Pages: 122–132, Jasmin Hofstetter, Carlos del Cañizo, Hannes Wagner, Sergio Castellanos and Tonio Buonassisi

    Version of Record online : 15 OCT 2015, DOI: 10.1002/pip.2699

  13. Gettering of transition metals by porous silicon in epitaxial silicon solar cells

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1866–1871, Hariharsudan Sivaramakrishnan Radhakrishnan, Chihak Ahn, Jan Van Hoeymissen, Frédéric Dross, Nick Cowern, Kris Van Nieuwenhuysen, Ivan Gordon, Robert Mertens and Jef Poortmans

    Version of Record online : 7 SEP 2012, DOI: 10.1002/pssa.201200232

  14. Analysis of simultaneous boron and phosphorus diffusion gettering in silicon

    physica status solidi (a)

    Volume 207, Issue 11, November 2010, Pages: 2589–2592, J. Schön, M. C. Schubert, W. Warta, H. Savin and A. Haarahiltunen

    Version of Record online : 2 NOV 2010, DOI: 10.1002/pssa.201026333

  15. Gettering of iron in CZ-silicon by polysilicon layer

    physica status solidi (c)

    Volume 8, Issue 3, March 2011, Pages: 751–754, A. Haarahiltunen, M. Yli-Koski, H. Talvitie, V. Vähänissi, J. Lindroos and H. Savin

    Version of Record online : 23 NOV 2010, DOI: 10.1002/pssc.201000194

  16. Sensitivity of state-of-the-art and high efficiency crystalline silicon solar cells to metal impurities

    Progress in Photovoltaics: Research and Applications

    Volume 21, Issue 5, August 2013, Pages: 1163–1170, Gianluca Coletti

    Version of Record online : 27 MAR 2012, DOI: 10.1002/pip.2195

  17. Dynamic modelling of the diffusion-segregation gettering. Application to the gettering by Al in Si

    physica status solidi (a)

    Volume 157, Issue 1, 16 September 1996, Pages: 37–48, A. Luque, C. del Cañizo, R. Lagos and A. Moehlecke

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2211570106

  18. Physical mechanisms of boron diffusion gettering of iron in silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 5-6, June 2010, Pages: 136–138, V. Vähänissi, A. Haarahiltunen, H. Talvitie, M. Yli-Koski, J. Lindroos and H. Savin

    Version of Record online : 21 APR 2010, DOI: 10.1002/pssr.201004105

  19. Influence of precipitates on the kinetics of iron gettering from the Si wafers by the Al layers

    physica status solidi (c)

    Volume 8, Issue 3, March 2011, Pages: 767–770, Andrey Sarikov, Victor Naseka and Vladimir Litovchenko

    Version of Record online : 23 NOV 2010, DOI: 10.1002/pssc.201000196

  20. Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion-implantation technique: A review

    physica status solidi (a)

    Kazunari Kurita, Takeshi Kadono, Ryousuke Okuyama, Satoshi Shigemastu, Ryo Hirose, Ayumi Onaka-Masada, Yoshihiro Koga and Hidehiko Okuda

    Version of Record online : 26 MAY 2017, DOI: 10.1002/pssa.201700216