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There are 66100 results for: content related to: Electroluminescence in plasma ion implanted silicon

  1. Silicon electroluminescent device production via plasma ion implantation

    physica status solidi (c)

    Volume 6, Issue S1, May 2009, Pages: S206–S209, Michael P. Bradley, Phillip R. Desautels, Darren Hunter and Marcel Risch

    Version of Record online : 15 APR 2009, DOI: 10.1002/pssc.200881278

  2. Quantum Confinement of Localized Excitons in Amorphous Silicon Nanostructures

    physica status solidi (a)

    Volume 190, Issue 3, April 2002, Pages: 769–773, Y. Kanemitsu, S. Nihonyanagi, Y. Fukunishi and T. Kushida

    Version of Record online : 24 APR 2002, DOI: 10.1002/1521-396X(200204)190:3<769::AID-PSSA769>3.0.CO;2-K

  3. Transparent conducting thin films by co-sputtering of ZnO-ITO targets

    physica status solidi (c)

    Volume 7, Issue 3-4, April 2010, Pages: 953–956, Paz Carreras, Aldrin Antony, Rubén Roldán, Oriol Nos, Paolo Antonio Frigeri, José Miguel Asensi and Joan Bertomeu

    Version of Record online : 23 FEB 2010, DOI: 10.1002/pssc.200982852

  4. Excitation power dependent photolu- minescence of PECVD a-SiOx:H (x<2) thin films

    physica status solidi (c)

    Volume 7, Issue 3-4, April 2010, Pages: 688–691, Akın Bacıoğlu, Alp Osman Kodolbaş and Özcan Öktü

    Version of Record online : 21 JAN 2010, DOI: 10.1002/pssc.200982731

  5. Optical demultiplexer based on an a-SiC:H voltage controlled device

    physica status solidi (c)

    Volume 7, Issue 3-4, April 2010, Pages: 1188–1191, P. Louro, M. Vieira, M. Fernandes, J. Costa, M. A. Vieira, J. Caeiro, N. Neves and M. Barata

    Version of Record online : 20 JAN 2010, DOI: 10.1002/pssc.200982702

  6. Silica in Natural Waters

    Standard Article

    Water Encyclopedia

    Robert Y. Ning

    Published Online : 15 APR 2005, DOI: 10.1002/047147844X.pc478

  7. Uniformity study of amorphous and microcrystalline silicon thin films deposited on 10 cm × 10 cm glass substrate using hot wire CVD technique

    physica status solidi (c)

    Volume 7, Issue 3-4, April 2010, Pages: 588–591, P. A. Frigeri, O. Nos, J. D. Calvo, P. Carreras, R. Roldan, J. M. Asensi and J. Bertomeu

    Version of Record online : 9 FEB 2010, DOI: 10.1002/pssc.200982827

  8. Dynamics of principal photoinduced effects in amorphous chalcogenides: In-situ simultaneous measurements of photodarkening, volume changes, and defect creation

    physica status solidi (c)

    Volume 7, Issue 3-4, April 2010, Pages: 857–860, N. Nakagawa, K. Shimakawa, T. Itoh and Y. Ikeda

    Version of Record online : 21 JAN 2010, DOI: 10.1002/pssc.200982753

  9. Visible anisotropic deformation of chalcogenide glass by optical force

    physica status solidi (a)

    Volume 206, Issue 5, May 2009, Pages: 892–897, Keiji Tanaka, Nobuaki Terakado and Akira Saitoh

    Version of Record online : 21 APR 2009, DOI: 10.1002/pssa.200881349

  10. Control of the concentration of protons intercalated into tungsten oxide thin films during deposition

    physica status solidi (c)

    Volume 5, Issue 5, May 2008, Pages: 1105–1108, Y. Yamada, K. Tajima, M. Okada, S. Bao, M. Tazawa, K. Yoshimura and A. Roos

    Version of Record online : 20 FEB 2008, DOI: 10.1002/pssc.200777734

  11. Amorphous BeN as a new solid host for rare-earth-related luminescent materials

    physica status solidi (RRL) - Rapid Research Letters

    Volume 1, Issue 4, July 2007, Pages: 153–155, A. R. Zanatta, H. H. Richardson and M. E. Kordesch

    Version of Record online : 25 MAY 2007, DOI: 10.1002/pssr.200701082

  12. Violet/Blue Emission from Hydrogenated Amorphous Carbon Film Prepared by Mass-Selected Ion-Beam Technique

    physica status solidi (a)

    Volume 184, Issue 2, April 2001, Pages: R4–R5, M.Y. Liao, C.L. Chai, S.Y. Yang, Z.K. Liu and Z.G. Wang

    Version of Record online : 12 APR 2001, DOI: 10.1002/1521-396X(200104)184:2<R4::AID-PSSA99994>3.0.CO;2-R

  13. Optical and structural characterization of silicon-carbon-nitride thin films for optoelectronics

    physica status solidi (c)

    Volume 7, Issue 3-4, April 2010, Pages: 758–761, Barbara Swatowska and Tomasz Stapinski

    Version of Record online : 8 JAN 2010, DOI: 10.1002/pssc.200982672

  14. Thin-Film Deposition Materials

    Standard Article

    Handbook of Chemicals and Gases for the Semiconductor Industry

    Ashutosh Misra, Jeremiah D. Hogan and Russell Chorush

    Published Online : 15 JUL 2002, DOI: 10.1002/0471263850.mis001

  15. Optoelectronic properties of a-Si1–xCx:H films grown in hydrogen diluted silane-methane plasma

    physica status solidi (c)

    Volume 7, Issue 3-4, April 2010, Pages: 782–785, Yuri Vygranenko, Miguel Fernandes, Paula Louro, Manuela Vieira and Andrei Sazonov

    Version of Record online : 4 FEB 2010, DOI: 10.1002/pssc.200982779

  16. Infrared Optical Constants and Dielectric Response Functions of Silicon Nitride and Oxynitride Films

    physica status solidi (a)

    Volume 183, Issue 2, February 2001, Pages: 439–449, M. Klanjšek Gunde and M. Maček

    Version of Record online : 21 FEB 2001, DOI: 10.1002/1521-396X(200102)183:2<439::AID-PSSA439>3.0.CO;2-B

  17. Some Physical and Optical Properties of the a-Se85SbxS15–x Film System

    physica status solidi (a)

    Volume 187, Issue 2, October 2001, Pages: 611–621, M.M. El-Samanoudy and A.H. Ammar

    Version of Record online : 15 OCT 2001, DOI: 10.1002/1521-396X(200110)187:2<611::AID-PSSA611>3.0.CO;2-1

  18. Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5

    physica status solidi (a)

    Volume 201, Issue 14, November 2004, Pages: 3087–3095, K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi and M. Wuttig

    Version of Record online : 19 OCT 2004, DOI: 10.1002/pssa.200406885

  19. Lithium niobate traveling-wave phase modulator with an indium tinoxide buffer layer

    Microwave and Optical Technology Letters

    Volume 5, Issue 5, May 1992, Pages: 218–221, Wen-Chung Chang, Wei-Ching Chuang and Way-Seen Wang

    Version of Record online : 22 JAN 2007, DOI: 10.1002/mop.4650050505

  20. 1.54 μm luminescence quenching of erbium-doped hydrogeated amorphous silicon deposited by D.C. magnetron sputtering

    physica status solidi (c)

    Volume 1, Issue 2, February 2004, Pages: 285–289, M. Kechouane, D. Biggemen and L. R. Tessler

    Version of Record online : 19 DEC 2003, DOI: 10.1002/pssc.200303958