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There are 8412662 results for: content related to: Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates

  1. Effects of Electric Field and Coulomb Interaction on the Interband Transitions of InAs Self-Assembled Quantum Dots: A Study by Modulation Reflectance Spectroscopy

    physica status solidi (b)

    Volume 224, Issue 1, March 2001, Pages: 89–92, W.-H. Chang, T.M. Hsu, C.C. Huang, N.T. Yeh and J.-I. Chyi

    Version of Record online : 5 MAR 2001, DOI: 10.1002/1521-3951(200103)224:1<89::AID-PSSB89>3.0.CO;2-9

  2. Morphology and wetting layer properties of InAs/GaAs nanostructures

    physica status solidi (c)

    Volume 6, Issue 4, April 2009, Pages: 789–792, Chao Zhao, Yonghai Chen, Bo Xu, Chenguang Tang and Zhanguo Wang

    Version of Record online : 19 DEC 2008, DOI: 10.1002/pssc.200880578

  3. Optical study of InAs quantum dot stacks embedded in GaAs/AlAs superlattices

    physica status solidi (c)

    Volume 6, Issue 12, December 2009, Pages: 2710–2712, R. Nedzinskas, B. Čechavičius, J. Kavaliauskas, A. Čerškus, J. Kundrotas, V. Karpus, V. Tamošiūnas, G. Valušis, G. Fasching, K. Unterrainer and G. Strasser

    Version of Record online : 21 OCT 2009, DOI: 10.1002/pssc.200982522

  4. Self-organization of InAs and As quantum dots in GaAs by a combined molecular beam epitaxy process

    physica status solidi (c)

    Volume 6, Issue 12, December 2009, Pages: 2698–2700, V. V. Chaldyshev, N. A. Bert, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato and B. R. Semyagin

    Version of Record online : 24 NOV 2009, DOI: 10.1002/pssc.200982573

  5. Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)B

    physica status solidi (c)

    Volume 6, Issue 6, June 2009, Pages: 1453–1455, E. Selçuk, G. J. Hamhuis and R. Nötzel

    Version of Record online : 8 APR 2009, DOI: 10.1002/pssc.200881508

  6. InAs quantum dots on GaAs substrates with InGaAs strain reducing layer for long wavelength emission

    physica status solidi (c)

    Volume 0, Issue 4, July 2003, Pages: 1193–1196, S. Saravanan, P. O. Vaccaro, J. M. Zanardi, K. Kubota and T. Aida

    Version of Record online : 18 JUN 2003, DOI: 10.1002/pssc.200303038

  7. ChemInform Abstract: Electrodeposition of InAs.

    ChemInform

    Volume 31, Issue 8, February 22, 2000, Page: no, Travis L. Wade, Lindell C. Ward, Clinton B. Maddox, Uwe Happek and John L. Stickney

    Version of Record online : 10 JUN 2010, DOI: 10.1002/chin.200008012

  8. In situ STM observation of site- controlled InAs nano-dot growth on GaAs(001) during In and As4 irradiations

    physica status solidi (c)

    Volume 8, Issue 2, February 2011, Pages: 402–404, Takashi Toujyou and Shiro Tsukamoto

    Version of Record online : 25 OCT 2010, DOI: 10.1002/pssc.201000422

    Corrected by:

    Erratum: Erratum: In situ STM observation of site- controlled InAs nano-dot growth on GaAs(001) during In and As4 irradiations

    Vol. 8, Issue 10, 3029, Version of Record online: 6 OCT 2011

  9. Photoluminescence Study of InAs/AlAs Quantum Dots

    physica status solidi (b)

    Volume 224, Issue 1, March 2001, Pages: 119–122, K. Pierz, A. Miglo, P. Hinze, F.J. Ahlers, G. Ade, I. Hapke-Wurst, U. Zeitler and R.J. Haug

    Version of Record online : 5 MAR 2001, DOI: 10.1002/1521-3951(200103)224:1<119::AID-PSSB119>3.0.CO;2-W

  10. Scanning tunneling microscopy study on stacking processes of InAs dots on GaAs (001)

    physica status solidi (c)

    Volume 0, Issue 4, July 2003, Pages: 1125–1128, Masahiro Takata, Shigehiko Hasegawa, Osamu Suekane and Hisao Nakashima

    Version of Record online : 18 JUN 2003, DOI: 10.1002/pssc.200303011

  11. Growth of InAs1–ySby solid solutions for obtaining decreased lattice mismatch in the InAs-GaSb (AlxGa1–nSb) system

    Crystal Research and Technology

    Volume 18, Issue 5, 1983, Pages: 575–580, Dr. L. D. Pramatarova

    Version of Record online : 5 APR 2006, DOI: 10.1002/crat.2170180502

  12. Electrical properties of individual and small ensembles of InAs/InP nanostructures

    physica status solidi (a)

    Volume 203, Issue 6, May 2006, Pages: 1353–1358, K. O. Vicaro, H. R. Gutiérrez, J. R. R. Bortoleto, L. Nieto, A. A. G. von Zuben, A. C. Seabra, P. A. Schulz and M. A. Cotta

    Version of Record online : 28 APR 2006, DOI: 10.1002/pssa.200566109

  13. Inelastic electron tunneling spectroscopy of InAs–superthin insulator–Au structures

    physica status solidi (a)

    Volume 97, Issue 2, 16 October 1986, Pages: 421–425, A. P. Kovchavtsev, G. L. Kurishev and K. O. Postnikov

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210970212

  14. Electrical characterization of InAs thin films

    physica status solidi (c)

    Volume 5, Issue 2, February 2008, Pages: 620–622, L. Botha, P. Shamba and J. R. Botha

    Version of Record online : 10 DEC 2007, DOI: 10.1002/pssc.200776810

  15. Inorganic Semiconductor Nanostructures

    Nanoscale Science and Technology

    Robert W. Kelsall, Ian W. Hamley, Mark Geoghegan, Pages: 130–202, 2005

    Published Online : 20 DEC 2005, DOI: 10.1002/0470020873.ch3

  16. Process-free estimation of threshold current density of InAs quantum dot laser

    physica status solidi (c)

    Volume 5, Issue 9, July 2008, Pages: 2935–2937, N. Kumagai, K. Watanabe, M. Ishida, Y. Nakata, N. Hatori, H. Sudo, T. Yamamoto, M. Sugawara and Y. Arakawa

    Version of Record online : 11 JUN 2008, DOI: 10.1002/pssc.200779283

  17. Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

    physica status solidi (c)

    Volume 4, Issue 2, February 2007, Pages: 625–627, M. Motyka, R. Kudrawiec, J. Misiewicz, D. Pucicki, M. Tlaczala, M. Fischer, B. Marquardt and A. Forchel

    Version of Record online : 7 FEB 2007, DOI: 10.1002/pssc.200673306

  18. Pulmonary toxicity of indium arsenide and arsenic selenide following repeated intratracheal instillations to the lungs of hamsters

    Applied Organometallic Chemistry

    Volume 8, Issue 3, May 1994, Pages: 265–271, Akiyo Tanaka, Akira Hisanaga, Miyuki Hirata, Minoru Omura, Naohide Inoue and Noburu Ishinishi

    Version of Record online : 17 SEP 2004, DOI: 10.1002/aoc.590080318

  19. Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

    Advanced Functional Materials

    Volume 17, Issue 16, November, 2007, Pages: 3187–3193, J. H. Lee, Z. M. Wang, W. T. Black, V. P. Kunets, Y. I. Mazur and G. J. Salamo

    Version of Record online : 29 AUG 2007, DOI: 10.1002/adfm.200700066

  20. The Stoichiometry of InAs Quantum Dots Determined by Cross-Sectional Scanning Tunneling Microscopy

    physica status solidi (b)

    Volume 215, Issue 1, September 1999, Pages: 865–868, H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg and M. Dähne-Prietsch

    Version of Record online : 3 SEP 1999, DOI: 10.1002/(SICI)1521-3951(199909)215:1<865::AID-PSSB865>3.0.CO;2-T