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There are 6006 results for: content related to: Point defect evolution in low-temperature MOCVD growth of InN

  1. Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions

    physica status solidi (c)

    Volume 6, Issue S2, June 2009, Pages: S401–S404, Floris Reurings, Filip Tuomisto, Chad S. Gallinat, Gregor Koblmüller and James S. Speck

    Version of Record online : 26 JAN 2009, DOI: 10.1002/pssc.200880952

  2. MOCVD Growth of High-Quality InN Films and Raman Characterization of Residual Stress Effects

    physica status solidi (b)

    Volume 228, Issue 1, November 2001, Pages: 1–4, E. Kurimoto, H. Harima, A. Hashimoto and A. Yamamoto

    Version of Record online : 5 NOV 2001, DOI: 10.1002/1521-3951(200111)228:1<1::AID-PSSB1>3.0.CO;2-U

  3. Comparison study of N- and In-polar {0001} InN layers grown by MOVPE

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 977–981, Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina and M. Kneissl

    Version of Record online : 13 JAN 2012, DOI: 10.1002/pssc.201100093

  4. Dependence of InN properties on MOCVD growth parameters

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2044–2046, Ö. Tuna, H. Behmenburg, C. Giesen, H. Kalisch, R. H. Jansen, G. P. Yablonskii and M. Heuken

    Version of Record online : 9 MAY 2011, DOI: 10.1002/pssc.201001004

  5. Observation of Zn vacancies in ZnO grown by chemical vapor transport

    physica status solidi (b)

    Volume 243, Issue 4, March 2006, Pages: 794–798, F. Tuomisto, K. Saarinen†, K. Grasza and A. Mycielski

    Version of Record online : 2 FEB 2006, DOI: 10.1002/pssb.200564658

  6. Semiconductors, Compound

    Standard Article

    Kirk-Othmer Encyclopedia of Chemical Technology

    Daniel D. Koleske, Timothy J. Drummond, Robert M. Biefeld, Marc E. Sherwin and Mary H. Crawford

    Published Online : 15 SEP 2006, DOI: 10.1002/0471238961.0315131604182113.a01.pub2

  7. The dominant shallow 0.225 eV acceptor in GaN

    physica status solidi (b)

    Volume 243, Issue 7, June 2006, Pages: 1604–1608, B. Monemar, P. P. Paskov, J. P. Bergman, T. Paskova, S. Figge, J. Dennemarck and D. Hommel

    Version of Record online : 6 JUN 2006, DOI: 10.1002/pssb.200565425

  8. Threading dislocations annihilation in regrown GaN film on nanoporous GaN template

    physica status solidi (c)

    Volume 6, Issue S2, June 2009, Pages: S699–S702, C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua and S. Tripathy

    Version of Record online : 7 MAY 2009, DOI: 10.1002/pssc.200880808

  9. Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture)

    Angewandte Chemie International Edition

    Volume 54, Issue 27, June 26, 2015, Pages: 7770–7788, Prof. Shuji Nakamura

    Version of Record online : 1 JUN 2015, DOI: 10.1002/anie.201500591

  10. Al(Ga)N/GaN high electron mobility transistors on silicon

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1049–1058, Yvon Cordier

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201532070

  11. On-line growth control of MOCVD deposited GaN and related ternary compounds via spectroscopic ellipsometry and X-ray diffraction

    physica status solidi (a)

    Volume 201, Issue 10, August 2004, Pages: 2259–2264, A. Bonanni, K. Schmidegg, A. Montagne Ramil, A. Kharchenko, J. Bethke, K. Lischka and H. Sitter

    Version of Record online : 4 AUG 2004, DOI: 10.1002/pssa.200404805

  12. Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy

    physica status solidi (a)

    Volume 201, Issue 10, August 2004, Pages: 2219–2224, F. Tuomisto, K. Saarinen and D. C. Look

    Version of Record online : 19 JUL 2004, DOI: 10.1002/pssa.200404809

  13. Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)

    physica status solidi (a)

    Volume 81, Issue 2, 16 February 1984, Pages: 625–646, P. J. Dean

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210810225

  14. MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

    physica status solidi (c)

    Volume 13, Issue 5-6, May 2016, Pages: 311–316, Ming Zhao, Hu Liang, Prem Kumar Kandaswamy, Marleen Van Hove, Rafael Venegas, Evi Vranken, Paola Favia, Annelies Vanderheyden, Danielle Vanhaeren, Yoga Nrusimha Saripalli, Stefaan Decoutere and Robert Langer

    Version of Record online : 27 JAN 2016, DOI: 10.1002/pssc.201510280

  15. Metallic Materials Deposition: Metal-Organic Precursors

    Standard Article

    Encyclopedia of Inorganic Chemistry

    Charles H. Winter, Wenjun Zheng and Hani M. El-Kaderi

    Published Online : 15 MAR 2006, DOI: 10.1002/0470862106.ia138

  16. Metal-Organic Chemical Vapor Deposition Growth of ZnO Nanowires

    Wide Band Gap Semiconductor Nanowires 1

    Vincent Consonni, Guy Feuillet, Pages: 265–302, 2014

    Published Online : 8 AUG 2014, DOI: 10.1002/9781118984321.ch11

  17. Influence of TBAs flow in MOCVD growth on nitrogen incorporation in GaAsN alloy and its optical quality detected by photoreflectance

    physica status solidi (c)

    Volume 1, Issue 2, February 2004, Pages: 329–332, W. Rudno-Rudzinski, R. Kudrawiec, J. Misiewicz, J. Derluyn and I. Moerman

    Version of Record online : 19 DEC 2003, DOI: 10.1002/pssc.200303973

  18. Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

    physica status solidi (b)

    Volume 243, Issue 7, June 2006, Pages: 1436–1440, F. Tuomisto, S. Hautakangas, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, M. Bockowski, T. Suski, T. Paskova, B. Monemar, X. Xu and D. C. Look

    Version of Record online : 6 JUN 2006, DOI: 10.1002/pssb.200565109

  19. Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture)

    Annalen der Physik

    Volume 527, Issue 5-6, June 2015, Pages: 335–349, Shuji Nakamura

    Version of Record online : 9 APR 2015, DOI: 10.1002/andp.201500801

  20. Metal-organic CVD of the high-Tc superconductor YBa2Cu3O7−δ

    Chemical Vapor Deposition

    Volume 3, Issue 1, February 1997, Pages: 9–26, Dr. Ian M. Watson

    Version of Record online : 2 NOV 2004, DOI: 10.1002/cvde.19970030102