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There are 5411 results for: content related to: The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

  1. LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

    physica status solidi (c)

    Volume 7, Issue 5, May 2010, Pages: 1317–1324, M.-A. di Forte Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, C. Gaquière, M. Oualli, E. Chartier, E. Morvan and S. Delage

    Version of Record online : 10 MAR 2010, DOI: 10.1002/pssc.200983114

  2. Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2053–2055, Sarah M. Eichfeld, Dongjin Won, Kathy Trumbull, Michael Labella, Xiaojun Weng, Joshua Robinson, David Snyder, Joan M. Redwing, Tanya Paskova, Kevin Udwary, Greg Mulholland, Ed Preble and Keith R. Evans

    Version of Record online : 19 MAY 2011, DOI: 10.1002/pssc.201001059

  3. Over 550 V breakdown voltage of InAlN/GaN HEMT on Si

    physica status solidi (c)

    Volume 10, Issue 5, May 2013, Pages: 824–826, Hisashi Saito, Yoshiharu Takada, Masahiko Kuraguchi, Miki Yumoto and Kunio Tsuda

    Version of Record online : 27 MAR 2013, DOI: 10.1002/pssc.201200608

  4. Polar and semipolar (112‾2) InAlN layers grown on AlN templates using MOVPE

    physica status solidi (b)

    Volume 253, Issue 1, January 2016, Pages: 99–104, Duc V. Dinh, Haoning Li and Peter J. Parbrook

    Version of Record online : 12 NOV 2015, DOI: 10.1002/pssb.201552264

  5. Self-aligned normally-off metal–oxide–semiconductor n++GaN/InAlN/GaN high electron mobility transistors

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1086–1090, M. Blaho, D. Gregušová, Š. Haščík, M. Jurkovič, M. Ťapajna, K. Fröhlich, J. Dérer, J. -F. Carlin, N. Grandjean and J. Kuzmík

    Version of Record online : 21 JAN 2015, DOI: 10.1002/pssa.201431588

  6. You have free access to this content
    Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

    Chemical Vapor Deposition

    Volume 21, Issue 1-2-3, March 2015, Pages: 33–40, Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang

    Version of Record online : 18 DEC 2014, DOI: 10.1002/cvde.201407100

  7. Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1538–1540, Jaesun Lee, Minjun Yan, Benedict Ofuonye, Jaehyung Jang, X. Gao, Shiping Guo and Ilesanmi Adesida

    Version of Record online : 8 JUN 2011, DOI: 10.1002/pssa.201001096

  8. Al(Ga)N/GaN high electron mobility transistors on silicon

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1049–1058, Yvon Cordier

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201532070

  9. Growth and characterization of InAlN layers nearly lattice-matched to GaN

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2500–2502, J. M. Mánuel, F. M. Morales, J. G. Lozano, R. García, T. Lim, L. Kirste, R. Aidam and O. Ambacher

    Version of Record online : 9 JUN 2011, DOI: 10.1002/pssc.201000985

  10. Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures

    physica status solidi (a)

    Volume 213, Issue 4, April 2016, Pages: 883–888, Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Shuichi Tomabechi and Norikazu Nakamura

    Version of Record online : 21 JAN 2016, DOI: 10.1002/pssa.201532547

  11. Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 592–595, M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata and N. Shigekawa

    Version of Record online : 12 DEC 2011, DOI: 10.1002/pssc.201100319

  12. Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors

    physica status solidi (c)

    Volume 6, Issue S2, June 2009, Pages: S925–S928, J. Kuzmik, G. Pozzovivo, J.-F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany and E. Gornik

    Version of Record online : 14 JAN 2009, DOI: 10.1002/pssc.200880754

  13. MBE growth and device characteristics of InAlN/GaN HFETs

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2598–2601, M. Higashiwaki and T. Matsui

    Version of Record online : 7 FEB 2005, DOI: 10.1002/pssc.200461389

  14. Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance

    physica status solidi (c)

    Volume 7, Issue 10, October 2010, Pages: 2440–2444, Han Wang, Jinwook W. Chung, Xiang Gao, Shiping Guo and Tomas Palacios

    Version of Record online : 22 JUN 2010, DOI: 10.1002/pssc.200983899

  15. Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1956–1958, G. Pozzovivo, J. Kuzmik, S. Golka, K. Čičo, K. Fröhlich, J.-F. Carlin, M. Gonschorek, N. Grandjean, W. Schrenk, G. Strasser and D. Pogany

    Version of Record online : 11 APR 2008, DOI: 10.1002/pssc.200778528

  16. Optimisation of GaN overgrowth of InAlN for DBRs

    physica status solidi (c)

    Volume 6, Issue S2, June 2009, Pages: S666–S670, Thomas C. Sadler, Menno J. Kappers and Rachel A. Oliver

    Version of Record online : 20 JAN 2009, DOI: 10.1002/pssc.200880904

  17. 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 855–857, Zhihong Feng, Bo Liu, Jiayun Yin, Jinjin Wang, Guodong Gu, Shaobo Dun and Shujun Cai

    Version of Record online : 13 JAN 2012, DOI: 10.1002/pssc.201100306

    Corrected by:

    Erratum: Erratum: 10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate [Phys. Status Solidi C 9, 855–857 (2012)]

    Vol. 9, Issue 12, 2644, Version of Record online: 19 NOV 2012

  18. Origin of unintentional gallium incorporation into AlN spacer layer grown by metalorganic vapor phase epitaxy

    physica status solidi (b)

    Volume 254, Issue 2, February 2017, Atsushi Yamada, Tetsuro Ishiguro, Junji Kotani, Shuichi Tomabechi and Norikazu Nakamura

    Version of Record online : 4 OCT 2016, DOI: 10.1002/pssb.201600496

  19. Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 986–988, Saurabh Pandey, Beatrice Fraboni, Daniela Cavalcoli, Albert Minj and Anna Cavallini

    Version of Record online : 13 JAN 2012, DOI: 10.1002/pssc.201100096

  20. Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1089–1095, Xiao-Hang Li, Shuo Wang, Hongen Xie, Yong O. Wei, Tsung-Ting Kao, Md. Mahbub Satter, Shyh-Chiang Shen, Paul Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Alec M. Fischer and Fernando A. Ponce

    Version of Record online : 20 JAN 2015, DOI: 10.1002/pssb.201451571