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There are 1509679 results for: content related to: High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

  1. Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 917–922, Hisashi Yoshida, Toshiki Hikosaka, Hajime Nago and Shinya Nunoue

    Article first published online : 25 MAR 2015, DOI: 10.1002/pssb.201451585

  2. Optical properties of InGaN/GaN MQW microdisk arrays on GaN/Si(111) template

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 2063–2065, Kang Jea Lee, Tae Su Oh, Eun Kyung Suh, Kyu Hwan Shim and Kee Young Lim

    Article first published online : 13 MAR 2008, DOI: 10.1002/pssc.200778407

  3. You have free access to this content
    MOCVD-Grown InGaN/GaN MQW LEDs on Si(111)

    physica status solidi (c)

    Volume 0, Issue 1, December 2002, Pages: 267–271, M. Poschenrieder, K. Fehse, F. Schulz, J. Bläsing, H. Witte, A. Krtschil, A. Dadgar, A. Diez, J. Christen and A. Krost

    Article first published online : 19 DEC 2002, DOI: 10.1002/pssc.200390040

  4. Large bandgap bowing of InxGa1–xN films and growth of blue/green InxGa1–xN/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1412–1415, Kang Jea Lee, Tae Su Oh, Tae Ki Kim, Gye Mo Yang and Kee Young Lim

    Article first published online : 9 MAY 2006, DOI: 10.1002/pssc.200565122

  5. Flip-chip bonding and fabrication of well-ordered nanocolumn arrays on sputter-deposited AlN/Si (111) substrate

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 992–996, Hiroaki Hayashi, Daishi Fukushima, Daisuke Tomimatsu, Tomohiro Noma, Yuta Konno and Katsumi Kishino

    Article first published online : 12 JAN 2015, DOI: 10.1002/pssa.201431728

  6. A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 866–872, Matthew J. Davies, Philip Dawson, Fabien C.-P. Massabuau, Adrian Le Fol, Rachel A. Oliver, Menno J. Kappers and Colin J. Humphreys

    Article first published online : 14 NOV 2014, DOI: 10.1002/pssb.201451535

  7. Radial GaN Nanowire-Based LEDs

    Wide Band Gap Semiconductor Nanowires 2

    Vincent Consonni, Guy Feuillets, Pages: 135–159, 2014

    Published Online : 8 AUG 2014, DOI: 10.1002/9781118984291.ch6

  8. Magnetic-Mechanical-Electrical-Optical Coupling Effects in GaN-Based LED/Rare-Earth Terfenol-D Structures

    Advanced Materials

    Volume 26, Issue 39, October 22, 2014, Pages: 6767–6772, Mingzeng Peng, Yan Zhang, Yudong Liu, Ming Song, Junyi Zhai and Zhong Lin Wang

    Article first published online : 2 SEP 2014, DOI: 10.1002/adma.201402824

  9. Structural and Optical Characteristics of InGaN/GaN Multiple Quantum Wells with Different Growth Interruption

    physica status solidi (b)

    Volume 228, Issue 1, November 2001, Pages: 165–168, H.K. Cho, J.Y. Lee, N. Sharma, J. Humphreys, G.M. Yang and C.S. Kim

    Article first published online : 5 NOV 2001, DOI: 10.1002/1521-3951(200111)228:1<165::AID-PSSB165>3.0.CO;2-N

  10. Properties of trench defects in InGaN/GaN quantum well structures

    physica status solidi (a)

    Volume 210, Issue 1, January 2013, Pages: 195–198, S.-L. Sahonta, M. J. Kappers, D. Zhu, T. J. Puchtler, T. Zhu, S. E. Bennett, C. J. Humphreys and R. A. Oliver

    Article first published online : 21 NOV 2012, DOI: 10.1002/pssa.201200408

  11. GaN-based nanowires: From nanometric-scale characterization to light emitting diodes

    physica status solidi (a)

    Volume 207, Issue 6, June 2010, Pages: 1425–1427, A.-L. Bavencove, G. Tourbot, E. Pougeoise, J. Garcia, P. Gilet, F. Levy, B. André, G. Feuillet, B. Gayral, B. Daudin and Le Si Dang

    Article first published online : 26 MAY 2010, DOI: 10.1002/pssa.200983603

  12. Contents: phys. stat. sol. (c) 5/6

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1447–1469,

    Article first published online : 13 MAY 2008, DOI: 10.1002/pssc.200860018

  13. MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 670–672, Ashraful G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama and N. Shigekawa

    Article first published online : 24 NOV 2011, DOI: 10.1002/pssc.201100355

  14. Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy

    Advanced Functional Materials

    Volume 24, Issue 28, July 23, 2014, Pages: 4492–4496, Can Bayram, John A. Ott, Kuen-Ting Shiu, Cheng-Wei Cheng, Yu Zhu, Jeehwan Kim, Manijeh Razeghi and Devendra K. Sadana

    Article first published online : 1 APR 2014, DOI: 10.1002/adfm.201304062

  15. Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 1036–1039, Tong-Ho Kim, Maria Losurdo, Soojeong Choi, Inho Yoon, Giovanni Bruno and April Brown

    Article first published online : 14 FEB 2012, DOI: 10.1002/pssc.201100072

  16. InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 2168–2170, Dandan Zhu, Clifford McAleese, Maik Häberlen, Carmen Salcianu, Ted Thrush, Menno Kappers, Andrew Phillips, Penelope Lane, Michael Kane, David Wallis, Trevor Martin, Mike Astles and Colin Humphreys

    Article first published online : 26 APR 2010, DOI: 10.1002/pssc.200983522

  17. Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 956–960, Lai Wang, Yuchen Xing, Zhibiao Hao and Yi Luo

    Article first published online : 28 DEC 2014, DOI: 10.1002/pssb.201451511

  18. You have free access to this content
    Correlative High-Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer

    Advanced Materials Interfaces

    Volume 2, Issue 1, January 7, 2015, Kyung Song, Christoph T. Koch, Ja Kyung Lee, Dong Yeong Kim, Jong Kyu Kim, Amin Parvizi, Woo Young Jung, Chan Gyung Park, Hyeok Jae Jeong, Hyoung Seop Kim, Ye Cao, Tiannan Yang, Long-Qing Chen and Sang Ho Oh

    Article first published online : 15 OCT 2014, DOI: 10.1002/admi.201400281

  19. Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

    physica status solidi (a)

    Volume 207, Issue 6, June 2010, Pages: 1404–1406, Bin Liu, Ping Han, Zili Xie, Rong Zhang, Chengxiang Liu, Xiangqian Xiu, Xuemei Hua, Hai Lu, Peng Chen, Youdou Zheng and Shengming Zhou

    Article first published online : 17 MAY 2010, DOI: 10.1002/pssa.200983571

  20. Emission properties and thermal annealing of InGaN/GaN multiple quantum wells with different protection layers

    physica status solidi (b)

    Volume 241, Issue 12, October 2004, Pages: 2816–2819, H. K. Cho, T. E. Park, D. C. Kim, J. E. Shin and J. S. Lee

    Article first published online : 3 SEP 2004, DOI: 10.1002/pssb.200405088