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There are 118131 results for: content related to: Electron transport properties in Al 0.25 Ga 0.75 N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD

  1. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 480–483, S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot and Y. Cordier

    Version of Record online : 1 MAR 2013, DOI: 10.1002/pssa.201200572

  2. Strain relaxation in thick (equation image) InGaN grown on GaN/Si substrate

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 468–471, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano and Nobuhiko Sawaki

    Version of Record online : 10 FEB 2012, DOI: 10.1002/pssb.201100445

  3. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

    physica status solidi (a)

    Volume 212, Issue 4, April 2015, Pages: 740–744, Suresh Sundaram, Renaud Puybaret, Xin Li, Youssef El Gmili, Jeremy Streque, Konstantinos Panztas, Gaelle Orsal, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini and Abdallah Ougazzaden

    Version of Record online : 11 MAR 2015, DOI: 10.1002/pssa.201400278

  4. Modulation-Doped Field-Effect Transistors (MODFET)

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Congyong Zhu, Romualdo A. Ferreyra and Hadis Morkoç

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W3149.pub2

  5. Annealing effects on electrical, structural, and surface morphological properties of Ir/n-InGaN Schottky structures

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 2027–2033, V. Rajagopal Reddy, R. Padma, M. Siva Pratap Reddy and C.-J. Choi

    Version of Record online : 20 JUN 2012, DOI: 10.1002/pssa.201228224

  6. Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1033–1038, Masatomo Sumiya, Tohru Honda, Liwen Sang, Yoshitaka Nakano, Kenji Watanabe and Fumio Hasegawa

    Version of Record online : 18 FEB 2015, DOI: 10.1002/pssa.201431732

  7. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Pages: 25–28, K. Pantzas, G. Patriarche, G. Orsal, S. Gautier, T. Moudakir, M. Abid, V. Gorge, Z. Djebbour, P. L. Voss and A. Ougazzaden

    Version of Record online : 21 NOV 2011, DOI: 10.1002/pssa.201100154

  8. Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 895–899, Matthias Finken, Ada Wille, Benjamin Reuters, Michael Heuken, Holger Kalisch and Andrei Vescan

    Version of Record online : 28 DEC 2014, DOI: 10.1002/pssb.201451576

  9. The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes

    physica status solidi (a)

    Volume 212, Issue 12, December 2015, Pages: 2936–2943, P. Chen, D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, L. C. Le, J. Yang, X. Li, L. Q. Zhang, J. P. Liu, S. M. Zhang and H. Yang

    Version of Record online : 15 SEP 2015, DOI: 10.1002/pssa.201532277

  10. Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations

    physica status solidi (a)

    Volume 208, Issue 11, November 2011, Pages: 2671–2675, M. V. Durnev, A. V. Omelchenko, E. V. Yakovlev, I. Yu. Evstratov and S. Yu. Karpov

    Version of Record online : 7 JUL 2011, DOI: 10.1002/pssa.201127278

  11. Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 3-4, April 2010, Pages: 88–90, S. Inoue, M. Katoh, A. Kobayashi, J. Ohta and H. Fujioka

    Version of Record online : 5 MAR 2010, DOI: 10.1002/pssr.201004044

  12. Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE

    physica status solidi (a)

    Volume 176, Issue 1, November 1999, Pages: 397–400, Y. Taniyasu, Y. Watanabe, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa and K. Takahashi

    Version of Record online : 22 NOV 1999, DOI: 10.1002/(SICI)1521-396X(199911)176:1<397::AID-PSSA397>3.0.CO;2-V

  13. InGaN/GaN dot-in-a-wire: ultimate terahertz nanostructure

    Laser & Photonics Reviews

    Volume 9, Issue 1, January 2015, Pages: 105–113, Guan Sun, Ruolin Chen, Yujie J. Ding, Hieu P. T. Nguyen and Zetian Mi

    Version of Record online : 2 JAN 2015, DOI: 10.1002/lpor.201400138

  14. Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

    physica status solidi (a)

    Volume 208, Issue 1, January 2011, Pages: 195–198, Seoung-Hwan Park, Yong-Tae Moon, Jeong Sik Lee, Ho Ki Kwon, Joong Seo Park and Doyeol Ahn

    Version of Record online : 27 SEP 2010, DOI: 10.1002/pssa.201026420

  15. A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 866–872, Matthew J. Davies, Philip Dawson, Fabien C.-P. Massabuau, Adrian Le Fol, Rachel A. Oliver, Menno J. Kappers and Colin J. Humphreys

    Version of Record online : 14 NOV 2014, DOI: 10.1002/pssb.201451535

  16. Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes

    physica status solidi (a)

    Volume 208, Issue 3, March 2011, Pages: 729–734, Jih-Yuan Chang, Yen-Kuang Kuo and Miao-Chan Tsai

    Version of Record online : 7 DEC 2010, DOI: 10.1002/pssa.201026369

  17. Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture)

    Angewandte Chemie International Edition

    Volume 54, Issue 27, June 26, 2015, Pages: 7770–7788, Prof. Shuji Nakamura

    Version of Record online : 1 JUN 2015, DOI: 10.1002/anie.201500591

  18. InGaN quantum wells and dots on initially shaped GaN islands: Growth and luminescence studies

    physica status solidi (a)

    Volume 209, Issue 8, August 2012, Pages: 1445–1450, H. Xiong, G. B. Wang and Z. L. Fang

    Version of Record online : 10 MAY 2012, DOI: 10.1002/pssa.201228101

  19. InGaN photocell significant efficiency enhancement on Si – an influence of interlayer physical properties

    International Journal of Energy Research

    Volume 40, Issue 9, July 2016, Pages: 1271–1279, Bablu K. Ghosh, Saiful S. M. Zainal, Khairul A. Mohamad and Ismail Saad

    Version of Record online : 28 MAR 2016, DOI: 10.1002/er.3520

  20. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates

    physica status solidi (a)

    Volume 213, Issue 12, December 2016, Pages: 3078–3102, Zi-Hui Zhang, Yonghui Zhang, Wengang Bi, Hilmi Volkan Demir and Xiao Wei Sun

    Version of Record online : 27 JUN 2016, DOI: 10.1002/pssa.201600281