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There are 15023 results for: content related to: Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling

  1. Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride-based LEDs

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 2162–2164, Y. K. Su, J. J. Chen, C. L. Lin, C. C. Kao and C. T. Lin

    Version of Record online : 26 APR 2010, DOI: 10.1002/pssc.200983503

  2. Effect of III-nitride polarization on VOC in p–i–n and MQW solar cells

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 2, February 2011, Pages: 86–88, Gon Namkoong, Patrick Boland, Si-Young Bae, Jae-Phil Shim, Dong-Seon Lee, Seong-Ran Jeon, Kurniawan Foe, Kevin Latimer and W. Alan Doolittle

    Version of Record online : 12 JAN 2011, DOI: 10.1002/pssr.201004512

  3. Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 917–922, Hisashi Yoshida, Toshiki Hikosaka, Hajime Nago and Shinya Nunoue

    Version of Record online : 25 MAR 2015, DOI: 10.1002/pssb.201451585

  4. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission

    physica status solidi (a)

    Saiful Alam, Suresh Sundaram, Xin li, Miryam E. Jamroz, Youssef El Gmili, Ivan C. Robin, Paul L. Voss, Jean-Paul Salvestrini and Abdallah Ougazzaden

    Version of Record online : 9 MAR 2017, DOI: 10.1002/pssa.201600868

  5. On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer

    physica status solidi (a)

    Volume 208, Issue 12, December 2011, Pages: 2907–2912, X. Li, F. Zhang, S. Okur, V. Avrutin, S. J. Liu, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. S. Hsu and A. Matulionis

    Version of Record online : 9 AUG 2011, DOI: 10.1002/pssa.201127250

  6. Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 2161–2163, Te-Chung Wang, Tsung-Shine Ko, Tien-Chang Lu, Hao-Chung Kuo, Run-Ci Gao, Jenq-Dar Tsay and Sing-Chung Wang

    Version of Record online : 16 APR 2008, DOI: 10.1002/pssc.200778503

  7. Correlative High-Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer

    Advanced Materials Interfaces

    Volume 2, Issue 1, January 7, 2015, Kyung Song, Christoph T. Koch, Ja Kyung Lee, Dong Yeong Kim, Jong Kyu Kim, Amin Parvizi, Woo Young Jung, Chan Gyung Park, Hyeok Jae Jeong, Hyoung Seop Kim, Ye Cao, Tiannan Yang, Long-Qing Chen and Sang Ho Oh

    Version of Record online : 15 OCT 2014, DOI: 10.1002/admi.201400281

  8. Magnetic-Mechanical-Electrical-Optical Coupling Effects in GaN-Based LED/Rare-Earth Terfenol-D Structures

    Advanced Materials

    Volume 26, Issue 39, October 22, 2014, Pages: 6767–6772, Mingzeng Peng, Yan Zhang, Yudong Liu, Ming Song, Junyi Zhai and Zhong Lin Wang

    Version of Record online : 2 SEP 2014, DOI: 10.1002/adma.201402824

  9. Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells

    physica status solidi (a)

    Volume 211, Issue 9, September 2014, Pages: 2157–2160, J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, L. C. Le, X. G. He, X. J. Li and H. Yang

    Version of Record online : 22 MAY 2014, DOI: 10.1002/pssa.201431086

  10. 2-µm Wavelength Lasers Employing InP-based Strained-Layer Quantum Wells

    Long-Wavelength Infrared Semiconductor Lasers

    Manabu Mitsuhara, Mamoru Oishi, Pages: 19–68, 2005

    Published Online : 28 JAN 2005, DOI: 10.1002/0471649813.ch2

  11. Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1296–1301, Jeomoh Kim, Mi-Hee Ji, Theeradetch Detchprohm, Russell D. Dupuis, Shahab Shervin and Jae-Hyun Ryou

    Version of Record online : 22 DEC 2015, DOI: 10.1002/pssa.201532764

  12. The Impact of Carrier Transport Confinement on the Energy Transfer Between InGaN/GaN Quantum-Well Nanorods and Colloidal Nanocrystals

    Advanced Functional Materials

    Volume 22, Issue 15, August 7, 2012, Pages: 3146–3152, Bin Jiang, Chunfeng Zhang, Xiaoyong Wang, Min Joo Park, Joon Seop Kwak, Jian Xu, Huichao Zhang, Jiayu Zhang, Fei Xue and Min Xiao

    Version of Record online : 3 MAY 2012, DOI: 10.1002/adfm.201200351

  13. Nonpolar Nitride Heterostructures and Devices grown by MOCVD

    Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

    Arpan Chakraborty, Shigefusa Chichibu, Umesh Mishra, Pages: 319–355, 2008

    Published Online : 16 SEP 2008, DOI: 10.1002/9783527623150.ch12

  14. Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 956–960, Lai Wang, Yuchen Xing, Zhibiao Hao and Yi Luo

    Version of Record online : 28 DEC 2014, DOI: 10.1002/pssb.201451511

  15. Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes

    physica status solidi (a)

    Volume 214, Issue 5, May 2017, Shengjun Zhou and Xingtong Liu

    Version of Record online : 30 NOV 2016, DOI: 10.1002/pssa.201600782

  16. Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells

    Advanced Optical Materials

    Volume 2, Issue 5, May 2014, Pages: 451–458, Jun Yin, Yang Li, Shengchang Chen, Jing Li, Junyong Kang, Wei Li, Peng Jin, Yonghai Chen, Zhihao Wu, Jiangnan Dai, Yanyan Fang and Changqing Chen

    Version of Record online : 4 MAR 2014, DOI: 10.1002/adom.201300463

  17. Monolitically grown dual wavelength InGaN LEDs for improved CRI

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2396–2398, P. Stauss, M. Mandl, P. Rode, A. Laubsch, A. Biebersdorf, R. Windisch, B. Galler, P. Drechsel and U. Steegmüller

    Version of Record online : 15 JUN 2011, DOI: 10.1002/pssc.201001073

  18. X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1655–1658, S. M. O'Malley, P. L. Bonanno, T. Wunderer, P. Brückner, B. Neubert, F. Scholz, A. Kazimirov and A. A. Sirenko

    Version of Record online : 16 APR 2008, DOI: 10.1002/pssc.200778571

  19. III–Nitride Light-Emitting Diodes on Novel Substrates

    Wide Bandgap Light Emitting Materials and Devices

    Gertrude F. Neumark, Igor L. Kuskovsky, Hongxing Jiang, Pages: 1–49, 2007

    Published Online : 15 NOV 2007, DOI: 10.1002/9783527617074.ch1

  20. Cathodoluminescence from an InGaN/GaN MQW Grown on an Epitaxially Laterally Overgrown GaN Epilayer

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 347–350, C. Trager-Cowan, I. Osborne, M. Barisonzi, S.K. Manson-Smith, K.P. O'Donnell, K. Jacobs, I. Moerman and P. Demeester

    Version of Record online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<347::AID-PSSB347>3.0.CO;2-G