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There are 10842 results for: content related to: Evidence for fractional filling in ultrathin GaInN/GaN multiple-quantum wells

  1. X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

    physica status solidi (b)

    Volume 248, Issue 3, March 2011, Pages: 616–621, H. Bremers, A. Schwiegel, L. Hoffmann, H. Jönen, U. Rossow, J. Thalmair, J. Zweck and A. Hangleiter

    Article first published online : 26 OCT 2010, DOI: 10.1002/pssb.201046335

  2. Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1155–1162, C. Bazioti, E. Papadomanolaki, Th. Kehagias, M. Androulidaki, G. P. Dimitrakopulos and E. Iliopoulos

    Article first published online : 25 FEB 2015, DOI: 10.1002/pssb.201451597

  3. AlInN/GaN based multi quantum well structures – growth and optical properties

    physica status solidi (c)

    Volume 6, Issue S2, June 2009, Pages: S451–S454, Christoph Hums, Aniko Gadanecz, Armin Dadgar, Jürgen Bläsing, Pierre Lorenz, Stefan Krischok, Frank Bertram, Alexander Franke, J. A. Schaefer, Jürgen Christen and Alois Krost

    Article first published online : 12 MAR 2009, DOI: 10.1002/pssc.200880899

  4. Investigations on the V-Defect Formation in GaInN–GaN Multi Quantum Well Structures

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 529–532, J. Off, F. Scholz, E. Ehrenbacher, O. Gfrörer, A. Hangleiter, G. Brockt and H. Lakner

    Article first published online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<529::AID-PSSB529>3.0.CO;2-8

  5. 1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

    physica status solidi (c)

    Volume 3, Issue 3, March 2006, Pages: 631–634, Zhichuan Niu, Shiyong Zhang, Haiqiao Ni, Donghai Wu, Zhenhong He, Zheng Sun, Qin Han and Ronghan Wu

    Article first published online : 21 FEB 2006, DOI: 10.1002/pssc.200564103

  6. Room-Temperature CW Operation of GaInN Multiple Quantum Well Laser Diodes with Optimized Indium Content

    physica status solidi (a)

    Volume 176, Issue 1, November 1999, Pages: 53–57, A. Tsujimura, A. Ishibashi, Y. Hasegawa, S. Kamiyama, I. Kidoguchi, N. Otsuka, R. Miyanaga, G. Sugahara, M. Suzuki, M. Kume, K. Harafuji and Y. Ban

    Article first published online : 22 NOV 1999, DOI: 10.1002/(SICI)1521-396X(199911)176:1<53::AID-PSSA53>3.0.CO;2-A

  7. Luminescence properties of InGaN-based dual-wavelength light-emitting diodes with different quantum-well arrangements

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 954–959, Minyan Zhang, Feng Yun, Yufeng Li, Wen Ding, Hong Wang, Yukun Zhao, Weihan Zhang, Min Zheng, Zhenhuan Tian, Xilin Su and Xun Hou

    Article first published online : 16 MAR 2015, DOI: 10.1002/pssa.201431748

  8. The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1529–1531, T. J. Badcock, R. Hao, M. A. Moram, P. Dawson, M. J. Kappers and C. J. Humphreys

    Article first published online : 1 JUN 2011, DOI: 10.1002/pssa.201001007

  9. Polarization switching of the optical gain in semipolar InGaN quantum wells

    physica status solidi (b)

    Volume 248, Issue 3, March 2011, Pages: 647–651, W. G. Scheibenzuber and U. T. Schwarz

    Article first published online : 13 JUL 2010, DOI: 10.1002/pssb.201046262

  10. Strain relaxation in thick (equation image) InGaN grown on GaN/Si substrate

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 468–471, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano and Nobuhiko Sawaki

    Article first published online : 10 FEB 2012, DOI: 10.1002/pssb.201100445

  11. Group III nitride core–shell nano- and microrods for optoelectronic applications

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 10, October 2013, Pages: 800–814, Martin Mandl, Xue Wang, Tilman Schimpke, Christopher Kölper, Michael Binder, Johannes Ledig, Andreas Waag, Xiang Kong, Achim Trampert, Frank Bertram, Jürgen Christen, Francesca Barbagini, Enrique Calleja and Martin Strassburg

    Article first published online : 23 JUL 2013, DOI: 10.1002/pssr.201307250

  12. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

    physica status solidi (b)

    Volume 244, Issue 8, August 2007, Pages: 2707–2729, James S. Harris Jr., R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi and T. Gugov

    Article first published online : 6 JUL 2007, DOI: 10.1002/pssb.200675620

  13. You have free access to this content
    Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

    Progress in Photovoltaics: Research and Applications

    Kasidit Toprasertpong, Hiromasa Fujii, Tomos Thomas, Markus Führer, Diego Alonso-Álvarez, Daniel J. Farrell, Kentaroh Watanabe, Yoshitaka Okada, Nicholas J. Ekins-Daukes, Masakazu Sugiyama and Yoshiaki Nakano

    Article first published online : 20 JAN 2015, DOI: 10.1002/pip.2585

  14. Spatial Variation of Luminescence of InGaN Alloys Measured by Highly-Spatially-Resolved Scanning Catholuminescence

    physica status solidi (b)

    Volume 228, Issue 1, November 2001, Pages: 35–39, F. Bertram, S. Srinivasan, L. Geng, F.A. Ponce, T. Riemann, J. Christen, S. Tanaka, H. Omiya and Y. Nakagawa

    Article first published online : 5 NOV 2001, DOI: 10.1002/1521-3951(200111)228:1<35::AID-PSSB35>3.0.CO;2-1

  15. Temperature-resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO2

    physica status solidi (c)

    Volume 10, Issue 3, March 2013, Pages: 532–535, Evgenii V. Lutsenko, Mikalai V. Rzheutski, Viacheslav N. Pavlovskii, Elena V. Muravitskaya, Gennadii P. Yablonskii, Christof Mauder, Ben Reuters, Holger Kalisch, Michael Heuken and Andrei Vescan

    Article first published online : 21 DEC 2012, DOI: 10.1002/pssc.201200677

  16. Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells

    physica status solidi (c)

    Volume 2, Issue 3, February 2005, Pages: 1023–1026, K. Kazlauskas, G. Tamulatis, S. Juršėnas, A. Žukauskas, M. Springis, Yung-Chen Cheng, Hsiang-Chen Wang, Chi-Feng Huang and C. C. Yang

    Article first published online : 16 FEB 2005, DOI: 10.1002/pssc.200460613

  17. Kinetics of the thermal reactions of bicyclo[4.2.2]deca-3,7-diene and endo-and exo-5-vinylbicyclo[2.2.2]oct-2-ene in the gas phase

    International Journal of Chemical Kinetics

    Volume 14, Issue 3, March 1982, Pages: 251–257, G. Huybrechts, Y. Hubin, M. Narmon and B. Van Mele

    Article first published online : 19 OCT 2004, DOI: 10.1002/kin.550140305

  18. HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm

    Crystal Research and Technology

    Volume 40, Issue 9, September 2005, Pages: 877–881, T. K. Sharma, M. Zorn, U. Zeimer, H. Kissel, F. Bugge and M. Weyers

    Article first published online : 8 AUG 2005, DOI: 10.1002/crat.200410449

  19. Solvothermal Synthesis of One-dimensional Chalcogenides Containing Group 13 Elements

    Zeitschrift für anorganische und allgemeine Chemie

    Volume 638, Issue 15, December 2012, Pages: 2526–2531, Sarah J. Ewing, M. Lucia Romero, Jack Hutchinson, Anthony V. Powell and Paz Vaqueiro

    Article first published online : 7 SEP 2012, DOI: 10.1002/zaac.201200255

  20. Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes

    Advanced Functional Materials

    Volume 21, Issue 20, October 21, 2011, Pages: 3828–3835, Suman De, Arunasish Layek, Archana Raja, Abdul Kadir, Mahesh R. Gokhale, Arnab Bhattacharya, Subhabrata Dhar and Arindam Chowdhury

    Article first published online : 11 AUG 2011, DOI: 10.1002/adfm.201100894