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There are 17159 results for: content related to: Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

  1. Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1075–1080, Zenji Yatabe, Joel T. Asubar, Taketomo Sato and Tamotsu Hashizume

    Version of Record online : 18 NOV 2014, DOI: 10.1002/pssa.201431652

  2. Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1104–1109, Yusuke Takei, Masayuki Kamiya, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi Iwai

    Version of Record online : 9 FEB 2015, DOI: 10.1002/pssa.201431645

  3. Modulation-Doped Field-Effect Transistors (MODFET)

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Congyong Zhu, Romualdo A. Ferreyra and Hadis Morkoç

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W3149.pub2

  4. You have free access to this content
    Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 439–450, V. N. Jmerik, E. V. Lutsenko and S. V. Ivanov

    Version of Record online : 1 MAR 2013, DOI: 10.1002/pssa.201300006

  5. Carbon-doped p-type (0001) plane AlGaN (Al = 6–55%) with high hole density

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 459–463, Hideo Kawanishi and Tatsuya Tomizawa

    Version of Record online : 9 JAN 2012, DOI: 10.1002/pssb.201100316

  6. Strain–Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer

    Strain

    Volume 47, Issue s2, December 2011, Pages: 19–27, M. K. Öztürk, H. Altuntaş, S. Çörekçi, Y. Hongbo, S. Özçelik and E. Özbay

    Version of Record online : 10 JUN 2010, DOI: 10.1111/j.1475-1305.2009.00730.x

  7. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

    physica status solidi (a)

    Volume 209, Issue 12, December 2012, Pages: 2646–2652, Janina Möreke, Milan Ťapajna, Michael J. Uren, Yi Pei, Umesh K. Mishra and Martin Kuball

    Version of Record online : 20 SEP 2012, DOI: 10.1002/pssa.201228395

  8. Optoelectronic devices on AlGaN/GaN HEMT platform

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1213–1221, Baikui Li, Xi Tang, Jiannong Wang and Kevin J. Chen

    Version of Record online : 24 FEB 2016, DOI: 10.1002/pssa.201532782

  9. A method of applying compressive pre-stress to AlGaN barrier in AlGaN/GaN heterostructures by depositing an additional thermally mismatched dielectric

    physica status solidi (a)

    Yanli Liu, Dunjun Chen, Lianhong Yang, Hai Lu, Rong Zhang and Youdou Zheng

    Version of Record online : 28 APR 2016, DOI: 10.1002/pssa.201600055

  10. Dislocation reduction in high Al-content AlGaN films for deep ultraviolet light emitting diodes

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1501–1503, Iftikhar Ahmad, Balakrishnan Krishnan, Bin Zhang, Qhalid Fareed, Mohamed Lachab, Joseph Dion and Asif Khan

    Version of Record online : 1 JUN 2011, DOI: 10.1002/pssa.201001104

  11. You have free access to this content
    Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

    Chemical Vapor Deposition

    Volume 21, Issue 1-2-3, March 2015, Pages: 33–40, Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang

    Version of Record online : 18 DEC 2014, DOI: 10.1002/cvde.201407100

  12. Piezotronic Effect Modulated Heterojuction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

    Advanced Materials

    Xingfu Wang, Ruomeng Yu, Chunyan Jiang, Weiguo Hu, Wenzhuo Wu, Yong Ding, Wenbo Peng, Shuti Li and Zhong Lin Wang

    Version of Record online : 3 JUN 2016, DOI: 10.1002/adma.201601721

  13. Polarization enhanced photoresponse of AlGaN p–i–n photodetectors

    physica status solidi (a)

    Volume 212, Issue 3, March 2015, Pages: 698–702, Lian-hong Yang, Kang-rong Lai, Bao-hua Zhang, Xiao-ling Fu, Jun-jun Wang and Wei Wei

    Version of Record online : 12 JAN 2015, DOI: 10.1002/pssa.201431506

  14. Effects of AlGaN delta-layer insertion on light emission characteristics of ultraviolet AlGaN/AlN quantum well structures

    physica status solidi (b)

    Volume 252, Issue 8, August 2015, Pages: 1844–1847, Seoung-Hwan Park and Daewoong Suh

    Version of Record online : 23 MAR 2015, DOI: 10.1002/pssb.201552052

  15. Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

    physica status solidi (a)

    Volume 209, Issue 6, June 2012, Pages: 1174–1178, Shaobo Dun, Yang Jiang, Jingqiang Li, Yulong Fang, Jiayun Yin, Bo Liu, Jingjing Wang, Hong Chen, Zhihong Feng and Shujun Cai

    Version of Record online : 5 MAR 2012, DOI: 10.1002/pssa.201127553

  16. MOVPE growth and characterization of a -plane AlGaN over the entire composition range

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 7, July 2010, Pages: 163–165, Masihhur R. Laskar, Tapas Ganguli, A. A. Rahman, A. P. Shah, M. R. Gokhale and Arnab Bhattacharya

    Version of Record online : 21 MAY 2010, DOI: 10.1002/pssr.201004091

  17. Depletion-mediated piezoelectric AlGaN/GaN resonators

    physica status solidi (a)

    Azadeh Ansari and Mina Rais-Zadeh

    Version of Record online : 30 JUN 2016, DOI: 10.1002/pssa.201532746

  18. Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1229–1235, Jie Hu, Steve Stoffels, Silvia Lenci, Shuzhen You, Benoit Bakeroot, Nicolò Ronchi, Rafael Venegas, Guido Groeseneken and Stefaan Decoutere

    Version of Record online : 2 MAY 2016, DOI: 10.1002/pssa.201532797

  19. Temperature-dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 4, April 2013, Pages: 297–300, Jianping Zeng, Wei Li, Jianchang Yan, Junxi Wang, Peipei Cong, Jinmin Li, Weiying Wang, Peng Jin and Zhanguo Wang

    Version of Record online : 6 FEB 2013, DOI: 10.1002/pssr.201307004

  20. Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

    physica status solidi (a)

    Volume 208, Issue 2, February 2011, Pages: 357–376, K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher and M. A. Hein

    Version of Record online : 21 JUL 2010, DOI: 10.1002/pssa.201026343