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There are 16773 results for: content related to: Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

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    Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 439–450, V. N. Jmerik, E. V. Lutsenko and S. V. Ivanov

    Article first published online : 1 MAR 2013, DOI: 10.1002/pssa.201300006

  2. Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

    physica status solidi (a)

    Volume 208, Issue 2, February 2011, Pages: 357–376, K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher and M. A. Hein

    Article first published online : 21 JUL 2010, DOI: 10.1002/pssa.201026343

  3. AlGaN/GaInN/GaN heterostructure field-effect transistor

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1614–1616, Hiromichi Ikki, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Akira Bandoh and Takashi Udagawa

    Article first published online : 16 JUN 2011, DOI: 10.1002/pssa.201001153

  4. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

    physica status solidi (a)

    Volume 209, Issue 12, December 2012, Pages: 2646–2652, Janina Möreke, Milan Ťapajna, Michael J. Uren, Yi Pei, Umesh K. Mishra and Martin Kuball

    Article first published online : 20 SEP 2012, DOI: 10.1002/pssa.201228395

  5. Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management

    physica status solidi (a)

    Volume 208, Issue 2, February 2011, Pages: 439–444, Manuel Trejo, Gregg H. Jessen, Kelson D. Chabak, James K. Gillespie, Antonio Crespo, Mauricio Kossler, Virginia Trimble, Derrick Langley, Eric R. Heller, Bruce Claflin, Dennis E. Walker, Brian Poling, Ryan Gilbert, Glen D. Via, John Hoelscher, Jason Roussos, Felix Ejeckam and Jerry Zimmer

    Article first published online : 9 DEC 2010, DOI: 10.1002/pssa.201000601

  6. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

    physica status solidi (a)

    Volume 208, Issue 2, February 2011, Pages: 434–438, Kevin J. Chen and Chunhua Zhou

    Article first published online : 18 OCT 2010, DOI: 10.1002/pssa.201000631

  7. The current status of ultraviolet laser diodes

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1586–1589, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Kazuya Uchiyama and Hirofumi Kan

    Article first published online : 19 MAY 2011, DOI: 10.1002/pssa.201000870

  8. GaN-based high-frequency devices and circuits: A Fraunhofer perspective

    physica status solidi (a)

    Volume 209, Issue 3, March 2012, Pages: 491–496, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Michael Dammann, Markus Cäsar, Stefan Müller, Friedbert van Raay, Rudolf Kiefer, Peter Brückner, Jutta Kühn, Markus Musser, Lutz Kirste, Christian Haupt, Wilfried Pletschen, Taek Lim, Rolf Aidam, Michael Mikulla and Oliver Ambacher

    Article first published online : 9 JAN 2012, DOI: 10.1002/pssa.201100452

  9. Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

    physica status solidi (a)

    Volume 208, Issue 5, May 2011, Pages: 1191–1194, Yasuhiro Isobe, Daisuke Iida, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Mamoru Imade, Yasuo Kitaoka and Yusuke Mori

    Article first published online : 18 MAR 2011, DOI: 10.1002/pssa.201001019

  10. AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 451–454, A. Knauer, V. Kueller, U. Zeimer, M. Weyers, C. Reich and M. Kneissl

    Article first published online : 18 DEC 2012, DOI: 10.1002/pssa.201200648

  11. UV-illuminated dielectrophoresis by two-dimensional electron gas (2DEG) in AlGaN/GaN heterojunction

    physica status solidi (a)

    Volume 209, Issue 11, November 2012, Pages: 2223–2228, Junxue Fu, Yuan Luo, Levent Yobas and Kevin J. Chen

    Article first published online : 27 AUG 2012, DOI: 10.1002/pssa.201228042

  12. AlGaN/GaN FET for DNA hybridization detection

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1623–1625, Yuji Wang and Wu Lu

    Article first published online : 15 JUN 2011, DOI: 10.1002/pssa.201001090

  13. Simulation of the influence of interface states on capacitance characteristics of insulator/AlGaN/GaN heterojunctions

    physica status solidi (a)

    Volume 210, Issue 7, July 2013, Pages: 1340–1344, J. Osvald

    Article first published online : 8 MAR 2013, DOI: 10.1002/pssa.201228644

  14. Ultrahigh gain AlGaN/GaN high energy radiation detectors

    physica status solidi (a)

    Volume 209, Issue 8, August 2012, Pages: 1562–1567, J. D. Howgate, M. Hofstetter, S. J. Schoell, M. Schmid, S. Schäfer, I. Zizak, V. Hable, C. Greubel, G. Dollinger, S. Thalhammer, M. Stutzmann and I. D. Sharp

    Article first published online : 3 MAY 2012, DOI: 10.1002/pssa.201228097

  15. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers

    physica status solidi (a)

    Volume 209, Issue 3, March 2012, Pages: 501–504, Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Kenichiro Takeda, Motoaki Iwaya, Yoshio Honda and Hiroshi Amano

    Article first published online : 15 FEB 2012, DOI: 10.1002/pssa.201100379

  16. Novel fluctuation-based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors

    physica status solidi (a)

    Volume 208, Issue 1, January 2011, Pages: 30–36, A. Matulionis, J. Liberis, I. Matulionienė, E. Šermukšnis, J. H. Leach, M. Wu and H. Morkoç

    Article first published online : 3 NOV 2010, DOI: 10.1002/pssa.201026361

  17. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 480–483, S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot and Y. Cordier

    Article first published online : 1 MAR 2013, DOI: 10.1002/pssa.201200572

  18. Development of high efficiency 255–355 nm AlGaN-based light-emitting diodes

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1594–1596, Cyril Pernot, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Myunghee Kim, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano

    Article first published online : 31 MAY 2011, DOI: 10.1002/pssa.201001037

  19. MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters

    physica status solidi (a)

    Volume 208, Issue 12, December 2011, Pages: 2724–2729, K. Balakrishnan, M. Lachab, H. C. Chen, D. Blom, V. Adivarahan, I. Ahmad, Q. Fareed and M. A. Khan

    Article first published online : 13 JUL 2011, DOI: 10.1002/pssa.201127078

  20. Study of defects and lifetime of green InGaN laser diodes

    physica status solidi (a)

    Volume 209, Issue 3, March 2012, Pages: 481–486, Uwe Strauss, Teresa Lermer, Jens Müller, Thomas Hager, Georg Brüderl, Adrian Avramescu, Alfred Lell and Christoph Eichler

    Article first published online : 9 JAN 2012, DOI: 10.1002/pssa.201100454