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There are 40074 results for: content related to: Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

  1. You have free access to this content
    Identifying threading dislocations in GaN films and substrates by electron channelling

    Journal of Microscopy

    Volume 244, Issue 3, December 2011, Pages: 311–319, RANGA J. KAMALADASA, FANG LIU, LISA M. PORTER, ROBERT F. DAVIS, DANIEL D. KOLESKE, GREG MULHOLLAND, KENNETH A. JONES and YOOSUF N. PICARD

    Version of Record online : 25 AUG 2011, DOI: 10.1111/j.1365-2818.2011.03538.x

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    Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

    physica status solidi (a)

    Volume 214, Issue 1, January 2017, M. D. Smith, D. Thomson, V. Z. Zubialevich, H. Li, G. Naresh-Kumar, C. Trager-Cowan and P. J. Parbrook

    Version of Record online : 25 OCT 2016, DOI: 10.1002/pssa.201600353

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    Study of dislocation structures near fatigue cracks using electron channelling contrast imaging technique (ECCI)

    Journal of Microscopy

    Volume 195, Issue 3, September 1999, Pages: 197–203, J. AHMED, A. J. WILKINSON and S. G. ROBERTS

    Version of Record online : 11 DEC 2003, DOI: 10.1046/j.1365-2818.1999.00574.x

  4. Strain inhomogeneities in epitaxial BaFe2As2 thin films

    Crystal Research and Technology

    Volume 50, Issue 11, November 2015, Pages: 891–902, Paul Chekhonin, Jan Engelmann, Marco Langer, Carl-Georg Oertel, Bernhard Holzapfel and Werner Skrotzki

    Version of Record online : 27 AUG 2015, DOI: 10.1002/crat.201500113

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    Analysis of FIB-induced damage by electron channelling contrast imaging in the SEM

    Journal of Microscopy

    Volume 265, Issue 1, January 2017, Pages: 51–59, IVAN GUTIERREZ-URRUTIA

    Version of Record online : 22 AUG 2016, DOI: 10.1111/jmi.12462

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    Correlative ECCI and CL of single GaN microstructures obtained using ECP by beam rocking on small areas

    Standard Article

    European Microscopy Congress 2016: Proceedings

    Johannes Ledig, Frederik Steib, Jana Hartmann, Sönke Fündling, Hergo-Heinrich Wehmann and Andreas Waag

    Published Online : 20 DEC 2016, DOI: 10.1002/9783527808465.EMC2016.6824

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    Quantitative and non-destructive defect metrology for beyond Si semiconductors

    Standard Article

    European Microscopy Congress 2016: Proceedings

    Anna Prokhodtseva, Tomas Vystavel, Andreas Schulze and Matty Caymax

    Published Online : 20 DEC 2016, DOI: 10.1002/9783527808465.EMC2016.6727

  8. Measuring the Plastic Zone Size by Orientation Gradient Mapping (OGM) and Electron Channeling Contrast Imaging (ECCI)

    Advanced Engineering Materials

    Volume 9, Issue 1-2, February, 2007, Pages: 31–37, M. T. Welsch, M. Henning, M. Marx and H. Vehoff

    Version of Record online : 30 JAN 2007, DOI: 10.1002/adem.200600195

  9. Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast

    Microscopy Research and Technique

    Volume 69, Issue 5, May 2006, Pages: 374–381, Martin A. Crimp

    Version of Record online : 27 APR 2006, DOI: 10.1002/jemt.20293

  10. Reduction of leakage current of p–n junction by using air-bridged lateral epitaxial growth technique

    physica status solidi (c)

    Volume 0, Issue 7, December 2003, Pages: 2494–2497, A. Yamada, Y. Kawaguchi and T. Yokogawa

    Version of Record online : 15 OCT 2003, DOI: 10.1002/pssc.200303353

  11. Surface Morphology of AlxGa1–xN Films Grown by MOCVD

    physica status solidi (a)

    Volume 188, Issue 2, December 2001, Pages: 803–806, L. Geng, F.A. Ponce, S. Tanaka, H. Omiya and Y. Nakagawa

    Version of Record online : 23 NOV 2001, DOI: 10.1002/1521-396X(200112)188:2<803::AID-PSSA803>3.0.CO;2-N

  12. SEM Investigation of High-Alloyed Austenitic Stainless Cast Steels With Varying Austenite Stability at Room Temperature and 100°C

    steel research international

    Volume 83, Issue 6, June 2012, Pages: 512–520, Horst Biermann, Johannes Solarek and Anja Weidner

    Version of Record online : 23 APR 2012, DOI: 10.1002/srin.201100293

  13. Threading dislocations in single-layer heteroepitaxial structures

    physica status solidi (a)

    Volume 52, Issue 2, 16 April 1979, Pages: 609–614, J. H. Basson and C. A. B. Ball

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210520230

  14. How is Creativity Best Managed? Some Empirical and Theoretical Guidelines

    Creativity and Innovation Management

    Volume 22, Issue 4, December 2013, Pages: 359–374, Robert Epstein, Katrina Kaminaka, Victoria Phan and Rachel Uda

    Version of Record online : 22 SEP 2013, DOI: 10.1111/caim.12042

  15. Structural Properties of GaN Grown by Pendeo-Epitaxy with In-Doping

    physica status solidi (b)

    Volume 228, Issue 1, November 2001, Pages: 235–238, Young Kue Hong, Chi Sun Kim, Hung Sub Jung, Chang-Hee Hong, Min Hong Kim, Shi-Jong Leem, Hyung Koun Cho and Jeong Yong Lee

    Version of Record online : 5 NOV 2001, DOI: 10.1002/1521-3951(200111)228:1<235::AID-PSSB235>3.0.CO;2-V

  16. Vertically Conductive MoS2 Spiral Pyramid

    Advanced Materials

    Volume 28, Issue 35, September 21, 2016, Pages: 7723–7728, Thuc Hue Ly, Jiong Zhao, Hyun Kim, Gang Hee Han, Honggi Nam and Young Hee Lee

    Version of Record online : 30 JUN 2016, DOI: 10.1002/adma.201602328

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    Cover Picture: Phys. Status Solidi C 5–6/2016

    physica status solidi (c)

    Volume 13, Issue 5-6, May 2016,

    Version of Record online : 25 MAY 2016, DOI: 10.1002/pssc.201670123

  18. Structural stratification of Sr1 − xCaxRuO3 thin films: Influence of aging process

    physica status solidi (a)

    Volume 210, Issue 2, February 2013, Pages: 239–254, Marcin Młynarczyk, Krzysztof Szot, Ulrich Poppe, Uwe Breuer, Shaobo Mi, Bronisław Psiuk, Edward A. Görlich, Krzysztof Tomala and Rainer Waser

    Version of Record online : 25 OCT 2012, DOI: 10.1002/pssa.201228217

  19. Stress-dislocation management in MOVPE of GaN on SiC wafers

    physica status solidi (a)

    Volume 213, Issue 10, October 2016, Pages: 2759–2763, M. E. Rudinsky, E. V. Yakovlev, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsulnikov and L. E. Velikovskiy

    Version of Record online : 16 JUN 2016, DOI: 10.1002/pssa.201600210

  20. Growth of InGaAs/GaAs on Offcut Substrates by MOVPE: Influence on Macrosteps and Dislocations Formation

    Crystal Research and Technology

    Volume 33, Issue 3, 1998, Pages: 375–382, C. Frigeri, A. Brinciotti and D. M. Ritchie

    Version of Record online : 14 DEC 1998, DOI: 10.1002/(SICI)1521-4079(1998)33:3<375::AID-CRAT375>3.0.CO;2-R