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There are 16693 results for: content related to: GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3 MW/cm 2 )

  1. High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2451–2453, Yun Zhang, Yi-Che Lee, Zachary Lochner, Hee Jin Kim, Suk Choi, Jae-Hyun Ryou, Russell D. Dupuis and Shyh-Chiang Shen

    Version of Record online : 20 JUN 2011, DOI: 10.1002/pssc.201001098

  2. High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors

    physica status solidi (a)

    Volume 188, Issue 1, November 2001, Pages: 183–186, T. Makimoto, K. Kumakura and N. Kobayashi

    Version of Record online : 22 NOV 2001, DOI: 10.1002/1521-396X(200111)188:1<183::AID-PSSA183>3.0.CO;2-L

  3. High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1970–1973, Yi-Che Lee, Hee-Jin Kim, Yun Zhang, Suk Choi, Russell D. Dupuis, Jae-Hyun Ryou and Shyh-Chiang Shen

    Version of Record online : 11 MAY 2010, DOI: 10.1002/pssc.200983555

  4. High-temperature (300 °C) operation of npn -type GaN/InGaN double heterojunction bipolar transistors

    physica status solidi (c)

    Volume 5, Issue 9, July 2008, Pages: 2957–2959, Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu and Toshiki Makimoto

    Version of Record online : 11 JUN 2008, DOI: 10.1002/pssc.200779299

  5. Growth of nitride semiconductors and its application to heterojunction bipolar transistors

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 89, Issue 3, March 2006, Pages: 20–25, Toshiki Makimoto and Kazuhide Kumakura

    Version of Record online : 17 FEB 2006, DOI: 10.1002/ecjb.20216

  6. MOCVD growth of InGaN:Mg for GaN/InGaN HBTs

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2157–2160, T. Chung, J.-B. Limb, U. Chowdhury, P. Li, J.-H. Ryou, D. Yoo, D. Zakharov, Z. Liliental-Weber and R. D. Dupuis

    Version of Record online : 7 FEB 2005, DOI: 10.1002/pssc.200461598

  7. Pnp AlGaN/GaN Heterojunction Bipolar Transistors Operating at 300 °C

    physica status solidi (a)

    Volume 194, Issue 2, December 2002, Pages: 443–446, K. Kumakura, T. Makimoto and N. Kobayashi

    Version of Record online : 4 DEC 2002, DOI: 10.1002/1521-396X(200212)194:2<443::AID-PSSA443>3.0.CO;2-N

  8. High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2589–2592, K. Kumakura, Y. Yamauchi and T. Makimoto

    Version of Record online : 7 FEB 2005, DOI: 10.1002/pssc.200461395

  9. Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

    physica status solidi (a)

    Volume 188, Issue 1, November 2001, Pages: 363–366, K. Kumakura, T. Makimoto and N. Kobayashi

    Version of Record online : 22 NOV 2001, DOI: 10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L

  10. AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Pages: 216–220, Ajay Raman, Christophe A. Hurni, James S. Speck and Umesh K. Mishra

    Version of Record online : 27 SEP 2011, DOI: 10.1002/pssa.201127169

  11. Advanced GaAs-Based HBT Designs for Wireless Communications Systems

    RF Technologies for Low Power Wireless Communications

    M. Frank Chang, Peter M. Asbeck, Pages: 39–77, 2002

    Published Online : 15 JAN 2002, DOI: 10.1002/0471221643.ch2

  12. You have free access to this content
    N-AlGaN/p-InGaN/n-GaN Heterojunction Bipolar Transistors for High Power Operation

    physica status solidi (c)

    Volume 0, Issue 1, December 2002, Pages: 95–98, T. Makimoto, K. Kumakura and N. Kobayashi

    Version of Record online : 19 DEC 2002, DOI: 10.1002/pssc.200390125

  13. Improved InP-based double heterojunction bipolar transistors

    physica status solidi (c)

    Volume 4, Issue 5, April 2007, Pages: 1680–1684, Y. S. Lin, J. H. Huang and C. H. Ho

    Version of Record online : 4 APR 2007, DOI: 10.1002/pssc.200674254

  14. H-Terminated Diamond Field-Effect Transistors

    CVD Diamond for Electronic Devices and Sensors

    Ricardo S. Sussmann, Pages: 289–311, 2009

    Published Online : 20 JAN 2009, DOI: 10.1002/9780470740392.ch13

  15. Suppressed Surface-Recombination Structure and Surface Passivation for Improving Current Gain of 4H-SiC BJTs

    Silicon Carbide: Power Devices and Sensors, Volume 2

    Kenichi Nonaka, Akihiko Horiuchi, Yuki Negoro, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Masashi Sato, Yusuke Maeyama, Masaaki Shimizu, Hiroaki Iwakuro, Pages: 445–465, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629077.ch16

  16. High breakdown field of pnp GaN/InGaN/AlGaN DHBTs with AlGaN collector

    physica status solidi (a)

    Volume 204, Issue 6, June 2007, Pages: 2037–2041, Kazuhide Kumakura, Atsushi Nishikawa and Toshiki Makimoto

    Version of Record online : 11 MAY 2007, DOI: 10.1002/pssa.200674849

  17. Modulation-Doped Field-Effect Transistors (MODFET)

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Congyong Zhu, Romualdo A. Ferreyra and Hadis Morkoç

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W3149.pub2

  18. Minority carrier transport equation for bipolar transistors with polysilicon emitter contact

    physica status solidi (a)

    Volume 196, Issue 2, April 2003, Pages: 436–449, Abdelaziz Zouari and Adel Ben Arab

    Version of Record online : 25 MAR 2003, DOI: 10.1002/pssa.200305955

  19. Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface

    Advanced Materials

    Volume 24, Issue 31, August 16, 2012, Pages: 4296–4300, Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi and Hideki Yamamoto

    Version of Record online : 8 JUN 2012, DOI: 10.1002/adma.201200871

  20. Raman scattering from In0.2Ga0.8N/GaN superlattices

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1997–2000, Kenji Kisoda, Kohji Hirakura and Hiroshi Harima

    Version of Record online : 17 MAY 2006, DOI: 10.1002/pssc.200565430