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There are 23592 results for: content related to: Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide

  1. Resistive-Switching Memory

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Daniele Ielmini

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W8222

  2. Resistive Switching in Mott Insulators and Correlated Systems

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6287–6305, Etienne Janod, Julien Tranchant, Benoit Corraze, Madec Querré, Pablo Stoliar, Marcelo Rozenberg, Tristan Cren, Dimitri Roditchev, Vinh Ta Phuoc, Marie-Paule Besland and Laurent Cario

    Version of Record online : 14 JUL 2015, DOI: 10.1002/adfm.201500823

  3. Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1–δFeO3 Interfaces

    Advanced Functional Materials

    Volume 22, Issue 5, March 7, 2012, Pages: 1040–1047, Atsushi Tsurumaki, Hiroyuki Yamada and Akihito Sawa

    Version of Record online : 18 JAN 2012, DOI: 10.1002/adfm.201102883

  4. Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

    Advanced Materials

    Volume 21, Issue 25-26, July 13, 2009, Pages: 2632–2663, Rainer Waser, Regina Dittmann, Georgi Staikov and Kristof Szot

    Version of Record online : 6 JUL 2009, DOI: 10.1002/adma.200900375

  5. Physics of the Switching Kinetics in Resistive Memories

    Advanced Functional Materials

    Volume 25, Issue 40, October 28, 2015, Pages: 6306–6325, Stephan Menzel, Ulrich Böttger, Martin Wimmer and Martin Salinga

    Version of Record online : 18 JUN 2015, DOI: 10.1002/adfm.201500825

  6. Resistive switching characteristics of TiN/MnO2/Pt memory devices

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 8-9, September 2010, Pages: 233–235, Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko and Jeon-kook Lee

    Version of Record online : 21 JUL 2010, DOI: 10.1002/pssr.201004213

  7. Improvement of resistive switching fluctuations by using one step lift-off process

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 10, October 2015, Pages: 594–596, Yingtao Li, Xiaoping Gao, Liping Fu, Peng Yuan, Hong Wang and Chunlan Tao

    Version of Record online : 24 SEP 2015, DOI: 10.1002/pssr.201510286

  8. How Does Moisture Affect the Physical Property of Memristance for Anionic–Electronic Resistive Switching Memories?

    Advanced Functional Materials

    Volume 25, Issue 32, August 26, 2015, Pages: 5117–5125, Felix Messerschmitt, Markus Kubicek and Jennifer L. M. Rupp

    Version of Record online : 14 JUL 2015, DOI: 10.1002/adfm.201501517

  9. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

    Advanced Functional Materials

    Volume 24, Issue 15, April 16, 2014, Pages: 2171–2179, Jie Shang, Gang Liu, Huali Yang, Xiaojian Zhu, Xinxin Chen, Hongwei Tan, Benlin Hu, Liang Pan, Wuhong Xue and Run-Wei Li

    Version of Record online : 27 NOV 2013, DOI: 10.1002/adfm.201303274

  10. P-76: Resistive Switching Memory Device Based on Amorphous Al-Zn-Sn-O Film for Flexible Electronics Application

    SID Symposium Digest of Technical Papers

    Volume 43, Issue 1, June 2012, Pages: 1340–1342, Yang-Shun Fan, Po-Tsun Liu, Ching-Hui Hsu and Hsuan-Ying Lai

    Version of Record online : 1 OCT 2012, DOI: 10.1002/j.2168-0159.2012.tb06051.x

  11. Resistive Switchings in Transition-Metal Oxides

    Functional Metal Oxides: New Science and Novel Applications

    Isao H. Inoue, Akihito Sawa, Pages: 443–463, 2013

    Published Online : 31 JUL 2013, DOI: 10.1002/9783527654864.ch16

  12. Resistive Switching Behaviors of Sol-Gel-Derived MgNb2O6 Thin Films on ITO/glass Substrate

    Journal of the American Ceramic Society

    Volume 97, Issue 11, November 2014, Pages: 3544–3548, Yi-Da Ho, Kung-Rong Chen and Cheng-Liang Huang

    Version of Record online : 24 JUL 2014, DOI: 10.1111/jace.13146

  13. Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 7, July 2013, Pages: 493–496, Soyun Park, Jae Hyuk Lee, Hee-Dong Kim, Seok Man Hong, Ho-Myoung An and Tae Geun Kim

    Version of Record online : 14 JUN 2013, DOI: 10.1002/pssr.201307187

  14. Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin films

    physica status solidi (a)

    Volume 212, Issue 4, April 2015, Pages: 751–766, Irina Kärkkänen, Andrey Shkabko, Mikko Heikkilä, Marko Vehkamäki, Jaakko Niinistö, Nabeel Aslam, Paul Meuffels, Mikko Ritala, Markku Leskelä, Rainer Waser and Susanne Hoffmann-Eifert

    Version of Record online : 21 JAN 2015, DOI: 10.1002/pssa.201431489

  15. Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 12, December 2010, Pages: 359–361, Sun Young Choi, Min Kyu Yang, Sangsig Kim and Jeon-Kook Lee

    Version of Record online : 14 OCT 2010, DOI: 10.1002/pssr.201004388

  16. 3D Cross-Point Array Memory

    Vertical 3D Memory Technologies

    Betty Prince, Pages: 192–274, 2014

    Published Online : 25 JUL 2014, DOI: 10.1002/9781118760475.ch05

  17. Resistive switching of crossbar memories with carbon nanotube electrodes

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 5-6, June 2011, Pages: 205–207, Jun Shen, Chaoying Zhang and Qing Chen

    Version of Record online : 11 MAY 2011, DOI: 10.1002/pssr.201105182

  18. Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

    Advanced Electronic Materials

    Volume 1, Issue 8, August 2015, Jian-Shiou Huang, Yung-Chang Lin, Hung-Wei Tsai, Wen-Chun Yen, Chia-Wei Chen, Chi-Yuan Lee, Tsung-Shune Chin and Yu-Lun Chueh

    Version of Record online : 6 JUL 2015, DOI: 10.1002/aelm.201500061

  19. Characteristics and mechanism of nano-polycrystalline La2O3 thin-film resistance switching memory

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 11, November 2013, Pages: 1005–1008, Hongbin Zhao, Hailing Tu, Feng Wei, Yuhua Xiong, Xinqaing Zhang and Jun Du

    Version of Record online : 29 AUG 2013, DOI: 10.1002/pssr.201308068

  20. Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 4, April 2013, Pages: 282–284, G. S. Tang, F. Zeng, C. Chen, S. Gao, H. D. Fu, C. Song, G. Y. Wang and F. Pan

    Version of Record online : 11 FEB 2013, DOI: 10.1002/pssr.201206534