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There are 3993 results for: content related to: On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics

  1. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

    physica status solidi (a)

    Volume 209, Issue 12, December 2012, Pages: 2646–2652, Janina Möreke, Milan Ťapajna, Michael J. Uren, Yi Pei, Umesh K. Mishra and Martin Kuball

    Article first published online : 20 SEP 2012, DOI: 10.1002/pssa.201228395

  2. Reduction of current collapse in the multi-mesa-channel AlGaN/GaN HEMT

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 898–902, Kota Ohi and Tamotsu Hashizume

    Article first published online : 3 FEB 2012, DOI: 10.1002/pssc.201100301

  3. Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1898–1901, K. Horio and A. Nakajima

    Article first published online : 13 MAR 2008, DOI: 10.1002/pssc.200778401

  4. Analysis of trapping effects in AlGaN/GaN HEMTs based on near zero bias output conductance

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 2004–2006, Hyeongnam Kim and Wu Lu

    Article first published online : 30 APR 2010, DOI: 10.1002/pssc.200983626

  5. Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 9, Issue 7, July 2012, Pages: 1655–1657, Kazushige Horio and Hiraku Onodera

    Article first published online : 14 MAY 2012, DOI: 10.1002/pssc.201100554

  6. Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

    physica status solidi (c)

    Volume 10, Issue 11, November 2013, Pages: 1421–1425, M. J. Anand, G. I. Ng, S. Vicknesh, S. Arulkumaran and K. Ranjan

    Article first published online : 18 OCT 2013, DOI: 10.1002/pssc.201300219

  7. Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

    physica status solidi (a)

    Volume 194, Issue 2, December 2002, Pages: 447–451, T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto and K. Maezawa

    Article first published online : 4 DEC 2002, DOI: 10.1002/1521-396X(200212)194:2<447::AID-PSSA447>3.0.CO;2-7

  8. Edge-field effects on gate capacitance, threshold voltage and low-field mobility in AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2448–2450, Hyeongnam Kim, Michael L. Schuette and Wu Lu

    Article first published online : 20 JUN 2011, DOI: 10.1002/pssc.201001078

  9. High-temperature operation of GaN-based OPAMP on silicon substrate

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1952–1954, Kazuki Nomoto, Kazuya Hasegawa and Tohru Nakamura

    Article first published online : 31 MAY 2010, DOI: 10.1002/pssc.200983483

  10. Drain current DLTS of normally-off AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 4, Issue 4, April 2007, Pages: 1536–1539, T. Mizutani, A. Kawano, S. Kishimoto and K. Maeazawa

    Article first published online : 28 MAR 2007, DOI: 10.1002/pssc.200674155

  11. Reduction of buffer-related current collapse in field-plate AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 6, Issue S2, June 2009, Pages: S929–S932, Atsushi Nakajima, Keiichi Itagaki and Kazushige Horio

    Article first published online : 14 JAN 2009, DOI: 10.1002/pssc.200880756

  12. Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2619–2622, D. Gregušová, J. Bernát, M. Držík, M. Marso, J. Novák, F. Uherek and P. Kordoš

    Article first published online : 1 FEB 2005, DOI: 10.1002/pssc.200461350

  13. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 887–889, Satyaki Ganguly, Bo Song, Wan Sik Hwang, Zongyang Hu, Mingda Zhu, Jai Verma, Huili (Grace) Xing and Debdeep Jena

    Article first published online : 20 MAR 2014, DOI: 10.1002/pssc.201300668

  14. High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 1, January 2011, Pages: 37–39, S. Arulkumaran, S. Vicknesh, G. I. Ng, Z. H. Liu, S. L. Selvaraj and T. Egawa

    Article first published online : 2 DEC 2010, DOI: 10.1002/pssr.201004465

  15. Temperature-dependent microwave noise performances of AlGaN/GaN HEMTs with post-gate annealing

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2659–2662, Dongmin Liu, Jaesun Lee and Wu Lu

    Article first published online : 15 MAR 2005, DOI: 10.1002/pssc.200461510

  16. Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors

    Microwave and Optical Technology Letters

    Volume 54, Issue 9, September 2012, Pages: 2103–2106, Jong-Min Lee, Hyung-Sup Yoon, Byoung-Gue Min, Jae-Kyoung Mun and Eunsoo Nam

    Article first published online : 18 JUN 2012, DOI: 10.1002/mop.27036

  17. Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 879–882, Shenghou Liu, Yong Cai, Rumin Gong, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, Jingjing Wang, Jiayun Yin, Cheng P. Wen, Hua Qin and Baoshun Zhang

    Article first published online : 7 DEC 2011, DOI: 10.1002/pssc.201100415

  18. Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

    Microwave and Optical Technology Letters

    Volume 34, Issue 1, 5 July 2002, Pages: 4–6, Y. Guhel, B. Boudart, V. Hoel, M. Werquin, C. Gaquiere, J. C. De Jaeger, M. A. Poisson, I. Daumiller and E. Kohn

    Article first published online : 21 MAY 2002, DOI: 10.1002/mop.10355

  19. Kilovolt AlGaN/GaN HEMTs as Switching Devices

    physica status solidi (a)

    Volume 188, Issue 1, November 2001, Pages: 213–217, N.-Q. Zhang, B. Moran, S.P. DenBaars, U.K. Mishra, X.W. Wang and T.P. Ma

    Article first published online : 22 NOV 2001, DOI: 10.1002/1521-396X(200111)188:1<213::AID-PSSA213>3.0.CO;2-8

  20. Buffer-trap and surface-state effects on gate lag in AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1931–1933, Kazushige Horio and Atsushi Nakajima

    Article first published online : 14 MAY 2010, DOI: 10.1002/pssc.200983418