Search Results

There are 18351 results for: content related to: On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics

  1. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

    physica status solidi (a)

    Volume 209, Issue 12, December 2012, Pages: 2646–2652, Janina Möreke, Milan Ťapajna, Michael J. Uren, Yi Pei, Umesh K. Mishra and Martin Kuball

    Version of Record online : 20 SEP 2012, DOI: 10.1002/pssa.201228395

  2. Optoelectronic devices on AlGaN/GaN HEMT platform

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1213–1221, Baikui Li, Xi Tang, Jiannong Wang and Kevin J. Chen

    Version of Record online : 24 FEB 2016, DOI: 10.1002/pssa.201532782

  3. Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane-based low-k insulator films

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1153–1157, Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda and Kazukiyo Joshin

    Version of Record online : 29 DEC 2014, DOI: 10.1002/pssa.201431665

  4. You have free access to this content
    Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

    Chemical Vapor Deposition

    Volume 21, Issue 1-2-3, March 2015, Pages: 33–40, Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang

    Version of Record online : 18 DEC 2014, DOI: 10.1002/cvde.201407100

  5. Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1137–1144, Zhibo Guo and T. Paul Chow

    Version of Record online : 30 JAN 2015, DOI: 10.1002/pssa.201431657

  6. AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

    physica status solidi (a)

    Volume 214, Issue 3, March 2017, Y. Li, G. I. Ng, S. Arulkumaran, Z. H. Liu, K. Ranjan, W. C. Xing, K. S. Ang, P. P. Murmu and J. Kennedy

    Version of Record online : 2 NOV 2016, DOI: 10.1002/pssa.201600555

  7. Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1130–1136, Raúl Rodríguez, Benito González, Javier García, Fetene M. Yigletu, José M. Tirado, Benjamín Iñiguez and Antonio Nunez

    Version of Record online : 20 JAN 2015, DOI: 10.1002/pssa.201431897

  8. Enhancement-mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1081–1085, Kai Zhang, Xing Chen, Minhan Mi, Shenglei Zhao, Yonghe Chen, Jincheng Zhang, Xiaohua Ma and Yue Hao

    Version of Record online : 20 OCT 2014, DOI: 10.1002/pssa.201431585

  9. Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 923–926, Sen Huang, Shu Yang, John Roberts and Kevin J. Chen

    Version of Record online : 29 FEB 2012, DOI: 10.1002/pssc.201100302

  10. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 480–483, S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot and Y. Cordier

    Version of Record online : 1 MAR 2013, DOI: 10.1002/pssa.201200572

  11. Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates

    physica status solidi (a)

    Volume 214, Issue 4, April 2017, Wael Jatal, Uwe Baumann, Heiko O. Jacobs, Frank Schwierz and Jörg Pezoldt

    Version of Record online : 24 FEB 2017, DOI: 10.1002/pssa.201600415

  12. Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1162–1169, Andrzej Taube, Eliana Kamińska, Maciej Kozubal, Jakub Kaczmarski, Wojciech Wojtasiak, Jakub Jasiński, Michał A. Borysiewicz, Marek Ekielski, Marcin Juchniewicz, Jakub Grochowski, Marcin Myśliwiec, Elżbieta Dynowska, Adam Barcz, Paweł Prystawko, Marcin Zając, Robert Kucharski and Anna Piotrowska

    Version of Record online : 13 FEB 2015, DOI: 10.1002/pssa.201431724

  13. High-temperature operation of GaN-based OPAMP on silicon substrate

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1952–1954, Kazuki Nomoto, Kazuya Hasegawa and Tohru Nakamura

    Version of Record online : 31 MAY 2010, DOI: 10.1002/pssc.200983483

  14. High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 1, January 2011, Pages: 37–39, S. Arulkumaran, S. Vicknesh, G. I. Ng, Z. H. Liu, S. L. Selvaraj and T. Egawa

    Version of Record online : 2 DEC 2010, DOI: 10.1002/pssr.201004465

  15. Recess gate AlGaN/GaN HEMTs using overlap gate metal structure

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1955–1957, Toshihide Ide, Guanxi Piao, Yoshiki Yano and Mitsuaki Shimizu

    Version of Record online : 26 APR 2010, DOI: 10.1002/pssc.200983487

  16. Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 879–882, Shenghou Liu, Yong Cai, Rumin Gong, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, Jingjing Wang, Jiayun Yin, Cheng P. Wen, Hua Qin and Baoshun Zhang

    Version of Record online : 7 DEC 2011, DOI: 10.1002/pssc.201100415

  17. AlGaN/GaN High Electron Mobility Transistors

    Nitride Semiconductor Devices: Principles and Simulation

    Tomás Palacios, Umesh K. Mishra, Pages: 211–233, 2007

    Published Online : 29 MAR 2007, DOI: 10.1002/9783527610723.ch10

  18. Al(Ga)N/GaN high electron mobility transistors on silicon

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1049–1058, Yvon Cordier

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201532070

  19. Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack

    physica status solidi (c)

    Volume 10, Issue 11, November 2013, Pages: 1421–1425, M. J. Anand, G. I. Ng, S. Vicknesh, S. Arulkumaran and K. Ranjan

    Version of Record online : 18 OCT 2013, DOI: 10.1002/pssc.201300219

  20. Edge-field effects on gate capacitance, threshold voltage and low-field mobility in AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2448–2450, Hyeongnam Kim, Michael L. Schuette and Wu Lu

    Version of Record online : 20 JUN 2011, DOI: 10.1002/pssc.201001078