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There are 14027 results for: content related to: On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics

  1. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

    physica status solidi (a)

    Volume 209, Issue 12, December 2012, Pages: 2646–2652, Janina Möreke, Milan Ťapajna, Michael J. Uren, Yi Pei, Umesh K. Mishra and Martin Kuball

    Article first published online : 20 SEP 2012, DOI: 10.1002/pssa.201228395

  2. High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 5, Issue 1, January 2011, Pages: 37–39, S. Arulkumaran, S. Vicknesh, G. I. Ng, Z. H. Liu, S. L. Selvaraj and T. Egawa

    Article first published online : 2 DEC 2010, DOI: 10.1002/pssr.201004465

  3. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 887–889, Satyaki Ganguly, Bo Song, Wan Sik Hwang, Zongyang Hu, Mingda Zhu, Jai Verma, Huili (Grace) Xing and Debdeep Jena

    Article first published online : 20 MAR 2014, DOI: 10.1002/pssc.201300668

  4. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 480–483, S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot and Y. Cordier

    Article first published online : 1 MAR 2013, DOI: 10.1002/pssa.201200572

  5. Temperature-dependent microwave noise performances of AlGaN/GaN HEMTs with post-gate annealing

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2659–2662, Dongmin Liu, Jaesun Lee and Wu Lu

    Article first published online : 15 MAR 2005, DOI: 10.1002/pssc.200461510

  6. Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 879–882, Shenghou Liu, Yong Cai, Rumin Gong, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, Jingjing Wang, Jiayun Yin, Cheng P. Wen, Hua Qin and Baoshun Zhang

    Article first published online : 7 DEC 2011, DOI: 10.1002/pssc.201100415

  7. High-temperature operation of GaN-based OPAMP on silicon substrate

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1952–1954, Kazuki Nomoto, Kazuya Hasegawa and Tohru Nakamura

    Article first published online : 31 MAY 2010, DOI: 10.1002/pssc.200983483

  8. Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 923–926, Sen Huang, Shu Yang, John Roberts and Kevin J. Chen

    Article first published online : 29 FEB 2012, DOI: 10.1002/pssc.201100302

  9. Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

    Microwave and Optical Technology Letters

    Volume 34, Issue 1, 5 July 2002, Pages: 4–6, Y. Guhel, B. Boudart, V. Hoel, M. Werquin, C. Gaquiere, J. C. De Jaeger, M. A. Poisson, I. Daumiller and E. Kohn

    Article first published online : 21 MAY 2002, DOI: 10.1002/mop.10355

  10. AlGaN/GaN High Electron Mobility Transistors

    Nitride Semiconductor Devices: Principles and Simulation

    Tomás Palacios, Umesh K. Mishra, Pages: 211–233, 2007

    Published Online : 29 MAR 2007, DOI: 10.1002/9783527610723.ch10

  11. Edge-field effects on gate capacitance, threshold voltage and low-field mobility in AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2448–2450, Hyeongnam Kim, Michael L. Schuette and Wu Lu

    Article first published online : 20 JUN 2011, DOI: 10.1002/pssc.201001078

  12. Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate

    physica status solidi (a)

    Volume 188, Issue 1, November 2001, Pages: 203–206, H. Kim, V. Tilak, B.M. Green, J.A. Smart, W.J. Schaff, J.R. Shealy and L.F. Eastman

    Article first published online : 22 NOV 2001, DOI: 10.1002/1521-396X(200111)188:1<203::AID-PSSA203>3.0.CO;2-C

  13. Recess gate AlGaN/GaN HEMTs using overlap gate metal structure

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1955–1957, Toshihide Ide, Guanxi Piao, Yoshiki Yano and Mitsuaki Shimizu

    Article first published online : 26 APR 2010, DOI: 10.1002/pssc.200983487

  14. Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1898–1901, K. Horio and A. Nakajima

    Article first published online : 13 MAR 2008, DOI: 10.1002/pssc.200778401

  15. Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2619–2622, D. Gregušová, J. Bernát, M. Držík, M. Marso, J. Novák, F. Uherek and P. Kordoš

    Article first published online : 1 FEB 2005, DOI: 10.1002/pssc.200461350

  16. Fabrication and Performance of AlGaN/GaN HEMTs on (111) Si Substrates

    physica status solidi (a)

    Volume 194, Issue 2, December 2002, Pages: 472–475, P. Javorka, A. Alam, M. Marso, M. Wolter, A. Fox, M. Heuken and P. Kordoš

    Article first published online : 4 DEC 2002, DOI: 10.1002/1521-396X(200212)194:2<472::AID-PSSA472>3.0.CO;2-F

  17. Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 940–944, Helmut Jung, Peter Abele, Jan Grünenpütt, Michael Hosch, Bernd Schauwecker, Hervé Blanck, Thomas Rödle and Michael Schäfer

    Article first published online : 27 FEB 2014, DOI: 10.1002/pssc.201300416

  18. Kilovolt AlGaN/GaN HEMTs as Switching Devices

    physica status solidi (a)

    Volume 188, Issue 1, November 2001, Pages: 213–217, N.-Q. Zhang, B. Moran, S.P. DenBaars, U.K. Mishra, X.W. Wang and T.P. Ma

    Article first published online : 22 NOV 2001, DOI: 10.1002/1521-396X(200111)188:1<213::AID-PSSA213>3.0.CO;2-8

  19. High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

    physica status solidi (a)

    Volume 200, Issue 1, November 2003, Pages: 187–190, Hideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa and Takashi Jimbo

    Article first published online : 7 NOV 2003, DOI: 10.1002/pssa.200303537

  20. Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 2368–2372, Shuo Jia, Yong Cai, Deliang Wang, Baoshun Zhang, Kei May Lau and Kevin J. Chen

    Article first published online : 17 MAY 2006, DOI: 10.1002/pssc.200565119