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There are 19173 results for: content related to: GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN–GaN intermediate layer

  1. Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

    physica status solidi (a)

    Volume 209, Issue 6, June 2012, Pages: 1174–1178, Shaobo Dun, Yang Jiang, Jingqiang Li, Yulong Fang, Jiayun Yin, Bo Liu, Jingjing Wang, Hong Chen, Zhihong Feng and Shujun Cai

    Article first published online : 5 MAR 2012, DOI: 10.1002/pssa.201127553

  2. Palladium-Supported Boron-Doped Hollow Carbon Spheres as Catalysts for the Solvent-free Aerobic Oxidation of Alcohols


    Volume 4, Issue 12, December 2012, Pages: 1930–1934, Dr. Vilas Ravat, Isaac Nongwe and Prof. Neil J. Coville

    Article first published online : 2 OCT 2012, DOI: 10.1002/cctc.201200374

  3. Micro-Raman spectroscopy of Pd–B/SiO2 amorphous alloy catalyst

    Journal of Raman Spectroscopy

    Volume 31, Issue 12, December 2000, Pages: 1051–1055, Guihua Wang, Xibin Yu, Xiaowei Cao, Hexing Li and Zongrang Zhang

    Article first published online : 24 OCT 2000, DOI: 10.1002/1097-4555(200012)31:12<1051::AID-JRS642>3.0.CO;2-N

  4. Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

    Surface and Interface Analysis

    Volume 42, Issue 6-7, June - July 2010, Pages: 799–802, L. Semra, A. Telia and A. Soltani

    Article first published online : 11 MAY 2010, DOI: 10.1002/sia.3462

  5. MOCVD Growth and Transport Investigation of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures on Sapphire Substrates

    physica status solidi (b)

    Volume 216, Issue 1, November 1999, Pages: 743–748, T. Wang, Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai and H. Ohno

    Article first published online : 9 NOV 1999, DOI: 10.1002/(SICI)1521-3951(199911)216:1<743::AID-PSSB743>3.0.CO;2-G

  6. AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Pages: 216–220, Ajay Raman, Christophe A. Hurni, James S. Speck and Umesh K. Mishra

    Article first published online : 27 SEP 2011, DOI: 10.1002/pssa.201127169

  7. Statistical Mechanics of a Three-Component System: Pd[BOND]B[BOND]H

    Berichte der Bunsengesellschaft für physikalische Chemie

    Volume 77, Issue 1, Januar 1973, Pages: 36–41, R. Mehlmann, H. Husemann and H. Brodowsky

    Article first published online : 5 MAY 2010, DOI: 10.1002/bbpc.19730770110

  8. You have free access to this content
    Investigation of 2D Electron Gas on AlGaN/GaN Interface by Electroreflectance

    physica status solidi (c)

    Volume 0, Issue 1, December 2002, Pages: 329–333, A. Drabińska, K.P. Korona, R. Bożek, J.M. Baranowski, K. Pakuła, T. Tomaszewicz and J. Gronkowski

    Article first published online : 19 DEC 2002, DOI: 10.1002/pssc.200390055

  9. Magnetotransport characterization of AlGaN/GaN interfaces

    physica status solidi (a)

    Volume 204, Issue 2, February 2007, Pages: 586–590, R. Tauk, A. Tiberj, P. Lorenzini, Z. Bougrioua, M. Azize, M. Sakowicz, K. Karpierz and W. Knap

    Article first published online : 13 NOV 2006, DOI: 10.1002/pssa.200622330

  10. Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth

    physica status solidi (c)

    Volume 2, Issue 7, May 2005, Pages: 2663–2667, Yugang Zhou, Rongming Chu, Jie Liu, Kevin J. Chen and Kei May Lau

    Article first published online : 11 APR 2005, DOI: 10.1002/pssc.200461623

  11. Distribution of built-in electric field in GaN(cap)/AlGaN/GaN(buffer) transistor heterostructures with various AlGaN thicknesses

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 883–886, M. Gladysiewicz and R. Kudrawiec

    Article first published online : 26 JAN 2012, DOI: 10.1002/pssc.201100485

  12. Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 923–926, Sen Huang, Shu Yang, John Roberts and Kevin J. Chen

    Article first published online : 29 FEB 2012, DOI: 10.1002/pssc.201100302

  13. AlGaN/GaN Nanowire Heterostructures

    Wide Band Gap Semiconductor Nanowires 2

    Jörg Teubert, Jordi Arbiol, Martin Eickhoff, Pages: 1–40, 2014

    Published Online : 8 AUG 2014, DOI: 10.1002/9781118984291.ch1

  14. Studies on reversible uptake of carbon monoxide, catalytic hydrogenation, reactions with benzyl halides and reproducible occurrence of an ESR-signal by a new polyoxime-palladium complex

    Die Makromolekulare Chemie

    Volume 176, Issue 5, May 1975, Pages: 1217–1231, Sung Jho Kim and Takeo Takizawa

    Article first published online : 12 MAR 2003, DOI: 10.1002/macp.1975.021760503

  15. Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1829–1831, F. Niebelschuetz, K. Brueckner, K. Tonisch, R. Stephan, V. Cimalla, O. Ambacher and M. A. Hein

    Article first published online : 31 MAY 2010, DOI: 10.1002/pssc.200983616

  16. Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

    physica status solidi (a)

    Volume 208, Issue 2, February 2011, Pages: 357–376, K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher and M. A. Hein

    Article first published online : 21 JUL 2010, DOI: 10.1002/pssa.201026343

  17. High-responsivity AlGaN–GaN multi-quantum well UV photodetector

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    Volume 27, Issue 2, March/April 2014, Pages: 309–317, Ali Rostami, Neda Ravanbaksh, Saeed Golmohammadi and Kambiz Abedi

    Article first published online : 17 DEC 2013, DOI: 10.1002/jnm.1933

  18. Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 989–995, Pankaj Upadhyay, Mudassar Meer, Kuldeep Takhar, Dolar Khachariya, Akhil Kumar S, Debashree Banerjee, Swaroop Ganguly, Apurba Laha and Dipankar Saha

    Article first published online : 20 MAR 2015, DOI: 10.1002/pssb.201451586

  19. Study on growth and electrical performance of double-heterostructure AlGaN/GaN/AlGaN field-effect-transistors

    physica status solidi (c)

    Volume 6, Issue S2, June 2009, Pages: S1003–S1006, Andrei Vescan, Hilde Hardtdegen, Nico Ketteniß, Martin Eickelkamp, Achim Noculak, Jens Goliasch, Martina v. d. Ahe, Helge Lago Bay, Thomas Schäpers, Holger Kalisch, Detlev Grützmacher and Rolf H. Jansen

    Article first published online : 16 JAN 2009, DOI: 10.1002/pssc.200880855

  20. AlGaN/GaN High Electron Mobility Transistors

    Nitride Semiconductor Devices: Principles and Simulation

    Tomás Palacios, Umesh K. Mishra, Pages: 211–233, 2007

    Published Online : 29 MAR 2007, DOI: 10.1002/9783527610723.ch10