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There are 168234 results for: content related to: Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

  1. InP-Based Devices and Circuits

    RF Technologies for Low Power Wireless Communications

    Dimitris Pavlidis, Donald Sawdai, George I. Haddad, Pages: 79–124, 2002

    Published Online : 15 JAN 2002, DOI: 10.1002/0471221643.ch3

  2. Modulation-Doped Field-Effect Transistors (MODFET)

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Congyong Zhu, Romualdo A. Ferreyra and Hadis Morkoç

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W3149.pub2

  3. III-V Compound Semiconductor Optoelectronic Devices

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    Wiley Encyclopedia of Electrical and Electronics Engineering

    Sudha Mokkapati and Chennupati Jagadish

    Published Online : 15 DEC 2014, DOI: 10.1002/047134608X.W3159.pub2

  4. 0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

    Microwave and Optical Technology Letters

    Volume 11, Issue 3, 20 February 1996, Pages: 135–139, Takatomo Enoki, Hiroshi Ito, Kenji Ikuta, Yohtaro Umeda and Yasunobu Ishii

    Version of Record online : 7 DEC 1998, DOI: 10.1002/(SICI)1098-2760(19960220)11:3<135::AID-MOP7>3.0.CO;2-M

  5. InP-based heterojunction bipolar transistors: Recent advances and thermal properties

    Microwave and Optical Technology Letters

    Volume 11, Issue 3, 20 February 1996, Pages: 114–120, Hin-Fal Chau, William Liu and Edward A. Beam III

    Version of Record online : 7 DEC 1998, DOI: 10.1002/(SICI)1098-2760(19960220)11:3<114::AID-MOP2>3.0.CO;2-O

  6. Semiconductors, Compound

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    Kirk-Othmer Encyclopedia of Chemical Technology

    Daniel D. Koleske, Timothy J. Drummond, Robert M. Biefeld, Marc E. Sherwin and Mary H. Crawford

    Published Online : 15 SEP 2006, DOI: 10.1002/0471238961.0315131604182113.a01.pub2

  7. Quantum Dot Technologies

    The Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics

    Richard A. Hogg, Ziyang Zhang, Pages: 7–42, 2014

    Published Online : 3 JAN 2014, DOI: 10.1002/9783527665587.ch1

  8. Mechanisms of semiconductor nanostructure formation

    physica status solidi (a)

    Volume 195, Issue 1, January 2003, Pages: 151–158, R. S. Goldman, B. Shin and B. Lita

    Version of Record online : 14 JAN 2003, DOI: 10.1002/pssa.200306280

  9. InGaP/InAlAs/InGaAs HEMT using a Pt-based Schottky gate

    Microwave and Optical Technology Letters

    Volume 11, Issue 3, 20 February 1996, Pages: 128–131, M. Amano, S. Fujita, S. Hosoi, T. Noda, A. Sasaki and Y. Ashizawa

    Version of Record online : 7 DEC 1998, DOI: 10.1002/(SICI)1098-2760(19960220)11:3<128::AID-MOP5>3.0.CO;2-N

  10. InP-based long-wavelength vertical-cavity surface-emitting lasers with buried tunnel junction

    physica status solidi (c)

    Volume 1, Issue 8, July 2004, Pages: 2183–2209, Christian Lauer, Markus Ortsiefer, Robert Shau, Jürgen Rosskopf, Gerhard Böhm, Ralf Meyer and Markus-Christian Amann

    Version of Record online : 21 JUN 2004, DOI: 10.1002/pssc.200404770

  11. 80–110 GHz MMIC amplifiers using a 0.1-μm GaAs-based mHEMT technology

    Microwave and Optical Technology Letters

    Volume 54, Issue 8, August 2012, Pages: 1978–1982, Dong Min Kang and Hyung Sup Yoon

    Version of Record online : 16 MAY 2012, DOI: 10.1002/mop.26948

  12. Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

    physica status solidi (a)

    Y. Kawamura, I. Shishido, S. Tanaka and S. Kawamata

    Version of Record online : 8 NOV 2016, DOI: 10.1002/pssa.201600510

  13. Modulation Doped FETs

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    Encyclopedia of RF and Microwave Engineering

    Lianghong Liu and Hadis Morkoç

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme269

  14. Low-temperature heteroepitaxial growth of InAlAs layers on ZnSnAs2/InP(001)

    physica status solidi (c)

    Volume 12, Issue 6, June 2015, Pages: 516–519, Hiroto Oomae, Akiko Suzuki, Hideyuki Toyota, Shin'ichi Nakamura and Naotaka Uchitomi

    Version of Record online : 30 MAR 2015, DOI: 10.1002/pssc.201400246

  15. In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD

    physica status solidi (a)

    Volume 209, Issue 7, July 2012, Pages: 1380–1383, Xiuju Zhou, Chak Wah Tang, Qiang Li and Kei May Lau

    Version of Record online : 25 APR 2012, DOI: 10.1002/pssa.201127707

  16. Two-dimensional simulation of type-II InP/GaAsSb/InP double heterojunction bipolar transistors

    physica status solidi (c)

    Volume 4, Issue 5, April 2007, Pages: 1675–1679, N. G. M. Tao, H. G. Liu and C. R. Bolognesi

    Version of Record online : 4 APR 2007, DOI: 10.1002/pssc.200674269

  17. Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

    Journal of Raman Spectroscopy

    Volume 40, Issue 8, August 2009, Pages: 1023–1027, A. Sayari, N. Yahyaoui, M. Oueslati, H. Maaref and K. Zellama

    Version of Record online : 20 FEB 2009, DOI: 10.1002/jrs.2224

  18. InP-based InGaAsSbN quantum well laser diodes in the 2-μm wavelength region

    Electronics and Communications in Japan

    Volume 94, Issue 5, May 2011, Pages: 33–38, Yuichi Kawamura

    Version of Record online : 25 APR 2011, DOI: 10.1002/ecj.10195

  19. Indium Phosphide (InP)

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    Encyclopedia of RF and Microwave Engineering

    Osamu Wada

    Published Online : 15 APR 2005, DOI: 10.1002/0471654507.eme175

  20. Raman characterization of an operating InAlAs—InGaAs—InP high electronic mobility transistor

    Journal of Raman Spectroscopy

    Volume 26, Issue 2, February 1995, Pages: 167–172, N. Matrullo, M. Constant, G. Sagon, R. Fauquembergue and A. Leroy

    Version of Record online : 14 APR 2005, DOI: 10.1002/jrs.1250260209