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There are 35513 results for: content related to: Back Cover: Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy (Phys. Status Solidi A 1/2012)

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    Back Cover: Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy (Phys. Status Solidi A 1/2012)

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Anja Eisenhardt, Marcel Himmerlich and Stefan Krischok

    Version of Record online : 19 DEC 2011, DOI: 10.1002/pssa.201190046

  2. Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Pages: 45–49, Anja Eisenhardt, Marcel Himmerlich and Stefan Krischok

    Version of Record online : 18 NOV 2011, DOI: 10.1002/pssa.201100098

  3. MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures

    physica status solidi (b)

    Volume 244, Issue 6, June 2007, Pages: 1802–1805, N. A. Fichtenbaum, C. J. Neufeld, C. Schaake, Y. Wu, M. H. Wong, M. Grundmann, S. Keller, S. P. DenBaars, J. S. Speck and U. K. Mishra

    Version of Record online : 18 APR 2007, DOI: 10.1002/pssb.200674753

  4. Formation of low-resistance and thermally stable Ohmic contacts to laser lift-off prepared N-polar n-GaN

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 527–529, Junjing Deng, Zhizhong Chen, Suyuan Wang, Feng Yu, Shengli Qi, Tongjun Yu and Guoyi Zhang

    Version of Record online : 7 DEC 2011, DOI: 10.1002/pssc.201100398

  5. Carrier recombination processes in In-polar and N-polar p-type InN films

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 472–475, Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwara, Xinqian Wang, Kazuhide Kusakabe and Akihiko Yoshikawa

    Version of Record online : 9 JAN 2012, DOI: 10.1002/pssb.201100496

  6. Comparison study of N- and In-polar {0001} InN layers grown by MOVPE

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 977–981, Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina and M. Kneissl

    Version of Record online : 13 JAN 2012, DOI: 10.1002/pssc.201100093

  7. Growth and characterization of mixed polar GaN columns and core–shell LEDs

    physica status solidi (a)

    Volume 212, Issue 4, April 2015, Pages: 727–731, Xue Wang, Uwe Jahn, Martin Mandl, Tilman Schimpke, Jana Hartmann, Johannes Ledig, Martin Straßburg, Hergo-H. Wehmann and Andreas Waag

    Version of Record online : 27 FEB 2015, DOI: 10.1002/pssa.201400362

  8. You have free access to this content
    Contents: (Phys. Status Solidi 1/2012)

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Pages: 5–10,

    Version of Record online : 15 DEC 2011, DOI: 10.1002/pssa.201221903

  9. Solid-phase epitaxy of InOx Ny alloys via thermal oxidation of InN films on yttria-stabilized zirconia

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 4, April 2014, Pages: 362–366, Atsushi Kobayashi, Takeki Itoh, Jitsuo Ohta, Masaharu Oshima and Hiroshi Fujioka

    Version of Record online : 17 FEB 2014, DOI: 10.1002/pssr.201400007

  10. Growth of In-polar and N-polar InN nanocolumns on GaN templates by molecular beam epitaxy

    physica status solidi (c)

    Volume 3, Issue 6, June 2006, Pages: 1561–1565, Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani and Akihiko Yoshikawa

    Version of Record online : 17 MAY 2006, DOI: 10.1002/pssc.200565327

  11. Investigation of inversion domain formation in AlN grown on sapphire by MOVPE

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 496–498, Viola Kueller, Arne Knauer, Frank Brunner, Anna Mogilatenko, Michael Kneissl and Markus Weyers

    Version of Record online : 12 DEC 2011, DOI: 10.1002/pssc.201100495

  12. Structural analysis of N-polar AlN layers grown on Si (111) substrates by high resolution X-ray diffraction

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 487–490, Mahesh Pandikunta, Oleg Ledyaev, Vladimir Kuryatkov and Sergey A. Nikishin

    Version of Record online : 24 JAN 2014, DOI: 10.1002/pssc.201300428

  13. Thermal and chemical stabilities of In- and N-polar InN surfaces

    physica status solidi (b)

    Volume 244, Issue 6, June 2007, Pages: 1834–1838, H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki and Y. Nanishi

    Version of Record online : 7 MAY 2007, DOI: 10.1002/pssb.200674923

  14. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

    physica status solidi (a)

    Volume 207, Issue 1, January 2010, Pages: 45–48, Ramón Collazo, Seiji Mita, Jinqiao Xie, Anthony Rice, James Tweedie, Rafael Dalmau and Zlatko Sitar

    Version of Record online : 8 DEC 2009, DOI: 10.1002/pssa.200982629

  15. Properties of AlN based lateral polarity structures

    physica status solidi (c)

    Volume 11, Issue 2, February 2014, Pages: 261–264, Ronny Kirste, Seiji Mita, Marc P. Hoffmann, Lindsay Hussey, Wei Guo, Isaac Bryan, Zachary Bryan, James Tweedie, Michael Gerhold, Axel Hoffmann, Ramón Collazo and Zlatko Sitar

    Version of Record online : 20 JAN 2014, DOI: 10.1002/pssc.201300287

  16. Growth and characterization of AlxGa1−xN lateral polarity structures

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1039–1042, Marc Patrick Hoffmann, Ronny Kirste, Seiji Mita, Wei Guo, James Tweedie, Milena Bobea, Isaac Bryan, Zachary Bryan, Michael Gerhold, Ramon Collazo and Zlatko Sitar

    Version of Record online : 18 NOV 2014, DOI: 10.1002/pssa.201431740

  17. Impact of gallium supersaturation on the growth of N-polar GaN

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2078–2080, Seiji Mita, Ramón Collazo, Anthony Rice, James Tweedie, Jinqiao Xie, Rafael Dalmau and Zlatko Sitar

    Version of Record online : 9 JUN 2011, DOI: 10.1002/pssc.201001063

  18. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1977–1979, Ramón Collazo, Seiji Mita, Anthony Rice, Rafael Dalmau, Patrick Wellenius, John Muth and Zlatko Sitar

    Version of Record online : 18 APR 2008, DOI: 10.1002/pssc.200778624

  19. Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 855–865, Andrew I. Duff, Liverios Lymperakis and Jörg Neugebauer

    Version of Record online : 25 MAR 2015, DOI: 10.1002/pssb.201451687

  20. Capacitance-voltage characteristic of Ga- and N-polar AlGaN/GaN HEMTs

    physica status solidi (c)

    Volume 13, Issue 5-6, May 2016, Pages: 317–320, Daqing Peng, Zhonghui Li, Chuanhao Li, Dongguo Zhang, Liang Li, Xun Dong, Lei Pan and Weike Luo

    Version of Record online : 9 FEB 2016, DOI: 10.1002/pssc.201510195