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There are 27484 results for: content related to: Combined Raman-DLTS investigations of n-type Cu–In–S absorber layers grown on Cu tape substrate (CISCuT)

  1. Defects

    Semiconductor Material and Device Characterization, Third Edition

    Dieter K. Schroder, Pages: 251–317, 2005

    Published Online : 7 APR 2005, DOI: 10.1002/0471749095.ch5

  2. On the nature of defects produced by motion of dislocations in silicon

    physica status solidi (a)

    Volume 212, Issue 8, August 2015, Pages: 1695–1703, M. A. Khorosheva, V. V. Kveder and M. Seibt

    Version of Record online : 10 JUN 2015, DOI: 10.1002/pssa.201532153

  3. Deep Level Transient Spectroscopy

    Standard Article

    Characterization of Materials

    Chin-Che Tin

    Published Online : 18 MAY 2012, DOI: 10.1002/0471266965.com036.pub2

  4. Photo-excited DLTS: Measurement of minority carrier traps

    Electronics and Communications in Japan (Part I: Communications)

    Volume 64, Issue 1, January 1981, Pages: 120–127, Masahiko Takikawa and Toshiaki Ikoma

    Version of Record online : 12 SEP 2008, DOI: 10.1002/ecja.4410640115

  5. Laplace DLTS studies on deep levels coexisted with InAs quantum dots

    physica status solidi (c)

    Volume 3, Issue 11, December 2006, Pages: 3844–3847, S. W. Lin, A. R. Peaker and A. M. Song

    Version of Record online : 22 NOV 2006, DOI: 10.1002/pssc.200671560

  6. Evaluation of Deep Level Transient Spectra Originating from Continuous Distributions of Deep Energy Levels

    physica status solidi (a)

    Volume 124, Issue 1, 16 March 1991, Pages: 295–309, K. Tittelbach-Helmrich

    Version of Record online : 5 APR 2006, DOI: 10.1002/pssa.2211240128

  7. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 199–225, T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell

    Version of Record online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0

  8. DLTS study of GaAs MIS structures with plasma deposited insulator

    physica status solidi (a)

    Volume 153, Issue 2, 16 February 1996, Pages: 379–387, E. G. Salman, A. N. Korshunov and V. N. Vertoprakhov

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211530211

  9. DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs1−xPx

    physica status solidi (b)

    Volume 198, Issue 1, 1 November 1996, Pages: 193–198, J. Przybytek, M. Baj, T. Slupiński and Ming-Fu Li

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssb.2221980126

  10. Characterization of point defects in ZnO thin films by optical deep level transient spectroscopy

    physica status solidi (b)

    Volume 248, Issue 4, April 2011, Pages: 941–949, Martin Ellguth, Matthias Schmidt, Rainer Pickenhain, Holger V. Wenckstern and Marius Grundmann

    Version of Record online : 24 AUG 2010, DOI: 10.1002/pssb.201046244

  11. A DLTS Study of InAs MIS Structures

    physica status solidi (a)

    Volume 117, Issue 2, 16 February 1990, Pages: 509–514, E. G. Salman, A. N. Korshunov and V. N. Vertoprakhov

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssa.2211170221

  12. Optical Excitation of DX Centers in GaAlAs Alloys Doped with Si and Te

    physica status solidi (b)

    Volume 167, Issue 1, 1 September 1991, Pages: 177–187, P. Seguy and P. Y. Yu

    Version of Record online : 19 FEB 2006, DOI: 10.1002/pssb.2221670120

  13. Electrical characterisation of GaN and AlGaN layers grown by plasma-assisted MBE

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 1043–1047, V. Kolkovsky, L. Scheffler, M. Sobanska, K. Klosek, Z. R. Zytkiewicz and J. Weber

    Version of Record online : 15 FEB 2012, DOI: 10.1002/pssc.201100138

  14. Dislocation-related electronic states in partially strain-relaxed InGaAs/GaAs heterostructures grown by MOVPE

    physica status solidi (c)

    Volume 4, Issue 8, July 2007, Pages: 3037–3042, Ł. Gelczuk, M. Dąbrowska-Szata, G. Jóźwiak, D. Radziewicz, J. Serafińczuk and P. Dłużewski

    Version of Record online : 22 MAY 2007, DOI: 10.1002/pssc.200675467

  15. TCAD-based DLTS simulation for analysis of extended defects

    physica status solidi (a)

    Volume 211, Issue 1, January 2014, Pages: 136–142, Artur Scheinemann and Andreas Schenk

    Version of Record online : 9 JAN 2014, DOI: 10.1002/pssa.201300233

  16. A re-examination of cobalt-related defects in n- and p-type silicon

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1913–1916, Leopold Scheffler, Vladimir Kolkovsky and Jörg Weber

    Version of Record online : 23 JUL 2012, DOI: 10.1002/pssa.201200140

  17. Analysis of DLTS Curves of Aggregated Deep Level Impurities

    physica status solidi (a)

    Volume 85, Issue 1, 16 September 1984, Pages: 219–226, K. žďánský and N. T. Thuc Hien

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2210850127

  18. DLTS study of a seeded physical vapor transport ZnSe schottky diode

    physica status solidi (a)

    Volume 146, Issue 2, 16 December 1994, Pages: 735–743, B. G. Markey, S. W. S. McKeever and G. Cantwell

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2211460218

  19. Practical methods to improve DLTS data smoothing

    physica status solidi (a)

    Volume 156, Issue 2, 16 August 1996, Pages: 413–420, E. Losson, K. Dmowski and B. Lepley

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211560219

  20. Analysis of DLTS Curves Corresponding to Non-Exponential Transients

    physica status solidi (a)

    Volume 81, Issue 1, 16 January 1984, Pages: 353–360, K. Žďánský and N. T. Thuc Hien

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210810139