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There are 4799 results for: content related to: The concept of quasi-Fermi level and expansion of faulted loops in SiC under minority carrier injection

  1. 4H-SiC: a new nonlinear material for midinfrared lasers

    Laser & Photonics Reviews

    Volume 7, Issue 5, September 2013, Pages: 831–838, Shunchong Wang, Minjie Zhan, Gang Wang, Hongwen Xuan, Wei Zhang, Chunjun Liu, Chunhua Xu, Yu Liu, Zhiyi Wei and Xiaolong Chen

    Article first published online : 19 JUL 2013, DOI: 10.1002/lpor.201300068

  2. Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors

    Advanced Optical Materials

    Volume 1, Issue 9, September 2013, Pages: 609–625, Stefania Castelletto, Brett C. Johnson and Alberto Boretti

    Article first published online : 7 AUG 2013, DOI: 10.1002/adom.201300246

  3. Fundamental Aspects of SiC

    Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

    Wolfgang J. Choyke, Robert P. Devaty, Pages: 661–713, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621842.ch11

  4. Formation of Extended Defects in 4H-SiC Epitaxial Growth and Development of a Fast Growth Technique

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano, Pages: 63–94, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch3

  5. Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique

    physica status solidi (b)

    Volume 246, Issue 7, July 2009, Pages: 1553–1568, Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata and Masahiro Nagano

    Article first published online : 16 JUN 2009, DOI: 10.1002/pssb.200945056

  6. Fundamental Aspects of SiC

    Handbook of Semiconductor Technology Set

    Wolfgang J. Choyke, Robert P. Devaty, Pages: 661–713, 2008

    Published Online : 4 JUN 2008, DOI: 10.1002/9783527619290.ch11

  7. Heteroepitaxial Growth of Nonpolar-face AlN on SiC Substrates by Plasma-assisted Molecular-beam Epitaxy

    Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

    Tanya Paskova, Pages: 73–99, 2008

    Published Online : 16 SEP 2008, DOI: 10.1002/9783527623150.ch4

  8. Silicon Carbide Applications in Power Electronics

    Power Electronics Semiconductor Devices

    Marie-Laure Locatelli, Dominique Planson, Pages: 185–265, 2010

    Published Online : 2 FEB 2010, DOI: 10.1002/9780470611494.ch4

  9. Fundamental Aspects of SiC

    Standard Article

    Materials Science and Technology

    W. J. Choyke and Robert P. Devaty

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0252

  10. Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Tsunenobu Kimoto, Katsunori Danno, Jun Suda, Pages: 267–286, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch10

  11. EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 95–151, S. Greulich-Weber

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<95::AID-PSSA95>3.0.CO;2-X

  12. Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1327–1336, Tsunenobu Kimoto, Katsunori Danno and Jun Suda

    Article first published online : 2 JUN 2008, DOI: 10.1002/pssb.200844076

  13. Raman Micro-Spectroscopy of Polytype and Structural Changes in 6H-Silicon Carbide due to Machining

    International Journal of Applied Ceramic Technology

    Volume 12, Issue 4, July/August 2015, Pages: 795–804, Benjamin Groth, Richard Haber and Adrian Mann

    Article first published online : 7 MAY 2014, DOI: 10.1111/ijac.12267

  14. Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds

    physica status solidi (b)

    Volume 245, Issue 7, July 2008, Pages: 1257–1271, B. M. Epelbaum, O. Filip and A. Winnacker

    Article first published online : 2 JUN 2008, DOI: 10.1002/pssb.200743508

  15. CVD Growth of 3C-SiC on 4H/6H Mesas

    Chemical Vapor Deposition

    Volume 12, Issue 8-9, September, 2006, Pages: 531–540, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang and M. Dudley

    Article first published online : 21 AUG 2006, DOI: 10.1002/cvde.200506460

  16. Porous SiC Preparation, Characterization and Morphology

    Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

    Y. Ke, Y. Shishkin, R. P. Devaty, W. J. Choyke, Pages: 1–29, 2008

    Published Online : 7 MAR 2008, DOI: 10.1002/9780470751817.ch1

  17. Bulk and Epitaxial Growth of Micropipe-Free Silicon Carbide on Basal and Rhombohedral Plane Seeds

    Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

    Boris M. Epelbaum, Octavian Filip, Albrecht Winnacker, Pages: 33–61, 2011

    Published Online : 28 MAR 2011, DOI: 10.1002/9783527629053.ch2

  18. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    physica status solidi (a)

    Volume 162, Issue 1, July 1997, Pages: 199–225, T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell

    Article first published online : 16 NOV 2001, DOI: 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO;2-0

  19. Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions

    X-Ray Spectrometry

    Volume 44, Issue 5, September/October 2015, Pages: 371–378, W. Wierzchowski, A. Turos, K. Wieteska, A. Stonert, R. Ratajczak, P. Jóźwik, R. Wilhelm, S. Akhamadaliev, K. Mazur and C. Paulmann

    Article first published online : 15 JUL 2015, DOI: 10.1002/xrs.2642

  20. Base Peculiarities of the Electron Spin Resonance in the Vicinity of Insulator–Metal Transition in 4H-SiC

    physica status solidi (b)

    Volume 230, Issue 1, March 2002, Pages: 113–116, A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek and E.N. Mokhov

    Article first published online : 11 MAR 2002, DOI: 10.1002/1521-3951(200203)230:1<113::AID-PSSB113>3.0.CO;2-J