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There are 18562 results for: content related to: Atomic scale modeling of edge a -type dislocations in InN

  1. Investigation of the atomic core structure of the (equation image)-mixed dislocation in wurtzite GaN

    physica status solidi (c)

    Volume 4, Issue 8, July 2007, Pages: 2940–2944, I. Belabbas, A. Béré, J. Chen, P. Ruterana and G. Nouet

    Version of Record online : 30 MAY 2007, DOI: 10.1002/pssc.200675441

  2. Atomic Structure of Extended Defects in Wurtzite GaN Epitaxial Layers

    physica status solidi (b)

    Volume 227, Issue 1, September 2001, Pages: 177–228, P. Ruterana and G. Nouet

    Version of Record online : 5 SEP 2001, DOI: 10.1002/1521-3951(200109)227:1<177::AID-PSSB177>3.0.CO;2-7

  3. Atomic scale defect analysis in the scanning transmission electron microscope

    Microscopy Research and Technique

    Volume 69, Issue 5, May 2006, Pages: 330–342, Ilke Arslan and Nigel D. Browning

    Version of Record online : 27 APR 2006, DOI: 10.1002/jemt.20289

  4. Partial dislocations in wurtzite GaN

    physica status solidi (a)

    Volume 202, Issue 15, December 2005, Pages: 2888–2899, Ph. Komninou, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias and Th. Karakostas

    Version of Record online : 17 NOV 2005, DOI: 10.1002/pssa.200521263

  5. Electronic structure of threading dislocations in wurtzite GaN

    physica status solidi (c)

    Volume 12, Issue 8, August 2015, Pages: 1123–1128, I. Belabbas, J. Chen and G. Nouet

    Version of Record online : 13 MAY 2015, DOI: 10.1002/pssc.201400215

  6. Grain Boundaries in Semiconductors

    Standard Article

    Materials Science and Technology

    Jany Thibault, Jean-Luc Rouviere and Alain Bourret

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0248

  7. Grain Boundaries in Semiconductors

    Handbook of Semiconductor Technology Set

    Jany Thibault, Jean-Luc Rouviere, Alain Bourret, Pages: 377–451, 2008

    Published Online : 4 JUN 2008, DOI: 10.1002/9783527619290.ch7

  8. Grain Boundaries in Semiconductors

    Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

    Jany Thibault, Jean-Luc Rouviere, Alain Bourret, Pages: 377–451, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621842.ch7

  9. A new stable core structure of 60° shuffle dislocation in silicon and associated mobility behavior

    physica status solidi (b)

    Volume 249, Issue 6, June 2012, Pages: 1250–1253, Kangyou Zhong, Qingyuan Meng and Wei Zhao

    Version of Record online : 1 FEB 2012, DOI: 10.1002/pssb.201147540

  10. HRTEM of dislocation cores and thin-foil effects in metals and intermetallic compounds

    Microscopy Research and Technique

    Volume 69, Issue 5, May 2006, Pages: 317–329, M.J. Mills, N.L. Baluc and P.M. Sarosi

    Version of Record online : 27 APR 2006, DOI: 10.1002/jemt.20288

  11. You have free access to this content
    Local analysis of the edge dislocation core in BaTiO3 thin film by STEM-EELS

    Journal of Microscopy

    Volume 236, Issue 2, November 2009, Pages: 128–131, H. KURATA, S. ISOJIMA, M. KAWAI, Y. SHIMAKAWA and S. ISODA

    Version of Record online : 22 OCT 2009, DOI: 10.1111/j.1365-2818.2009.03265.x

  12. Core models of a-edge threading dislocations in wurtzite III(Al,Ga,In)-nitrides

    physica status solidi (a)

    Volume 206, Issue 8, August 2009, Pages: 1931–1935, J. Kioseoglou, Ph. Komninou and Th. Karakostas

    Version of Record online : 17 JUL 2009, DOI: 10.1002/pssa.200881435

  13. Global search for stable screw dislocation cores in III-N semiconductors

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Pages: 71–74, S. Kraeusel and B. Hourahine

    Version of Record online : 16 NOV 2011, DOI: 10.1002/pssa.201100097

  14. Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe

    Acta Crystallographica Section A

    Volume 70, Issue 6, November 2014, Pages: 524–531, Tadas Paulauskas, Christopher Buurma, Eric Colegrove, Brian Stafford, Zhao Guo, Maria K. Y. Chan, Ce Sun, Moon J. Kim, Sivalingam Sivananthan and Robert F. Klie

    DOI: 10.1107/S2053273314019639

  15. Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 484–487, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, Ph. Komninou and Th. Karakostas

    Version of Record online : 29 FEB 2012, DOI: 10.1002/pssc.201100372

  16. On the nature of defects produced by motion of dislocations in silicon

    physica status solidi (a)

    Volume 212, Issue 8, August 2015, Pages: 1695–1703, M. A. Khorosheva, V. V. Kveder and M. Seibt

    Version of Record online : 10 JUN 2015, DOI: 10.1002/pssa.201532153

  17. Excess Solute Atmosphere Carried by a Potential Well Characteristic of a Moving Dislocation Core

    physica status solidi (b)

    Volume 125, Issue 1, 1 September 1984, Pages: 147–154, R. Fuentes-Samaniego and J. P. Hirth

    Version of Record online : 10 FEB 2006, DOI: 10.1002/pssb.2221250116

  18. On a Dislocation Core Tensor

    physica status solidi (b)

    Volume 168, Issue 1, 1 November 1991, Pages: 59–66, B. Maruszewski

    Version of Record online : 19 FEB 2006, DOI: 10.1002/pssb.2221680105

  19. Dislocations in Crystals

    Standard Article

    Materials Science and Technology

    David J. Bacon

    Published Online : 15 SEP 2006, DOI: 10.1002/9783527603978.mst0007

  20. A theoretical investigation of dislocations in cubic and hexagonal gallium nitride

    physica status solidi (c)

    Volume 0, Issue 6, September 2003, Pages: 1684–1709, A. T. Blumenau, C. J. Fall, J. Elsner, R. Jones, M. I. Heggie and T. Frauenheim

    Version of Record online : 27 AUG 2003, DOI: 10.1002/pssc.200303126