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There are 2224061 results for: content related to: MBE growth and applications of cubic AlN/GaN quantum wells

  1. Self-consistent simulation of two-dimensional electron gas characteristics of a novel (InxAl1–xN/AlN) MQWs/InN/GaN heterostructure

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1263–1268, Wei Li, Quan Wang, Cuimei Wang, Haibo Yin, Junda Yan, Jiamin Gong, Baiquan Li, Xiaoliang Wang and Zhanguo Wang

    Version of Record online : 3 FEB 2016, DOI: 10.1002/pssa.201532778

  2. You have full text access to this OnlineOpen article
    Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    Advanced Electronic Materials

    Volume 4, Issue 1, January 2018, J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback and J. A. Simmons

    Version of Record online : 4 DEC 2017, DOI: 10.1002/aelm.201600501

  3. Determination of polar C-plane and nonpolar A-plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

    physica status solidi (b)

    Volume 251, Issue 4, April 2014, Pages: 788–791, Huijie Li, Xianglin Liu, Ling Sang, Jianxia Wang, Dongdong Jin, Heng Zhang, Shaoyan Yang, Shuman Liu, Wei Mao, Yue Hao, Qinsheng Zhu and Zhanguo Wang

    Version of Record online : 2 DEC 2013, DOI: 10.1002/pssb.201350199

  4. You have free access to this content
    Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

    physica status solidi (a)

    Volume 210, Issue 3, March 2013, Pages: 439–450, V. N. Jmerik, E. V. Lutsenko and S. V. Ivanov

    Version of Record online : 1 MAR 2013, DOI: 10.1002/pssa.201300006

  5. Strain–Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer

    Strain

    Volume 47, Issue s2, December 2011, Pages: 19–27, M. K. Öztürk, H. Altuntaş, S. Çörekçi, Y. Hongbo, S. Özçelik and E. Özbay

    Version of Record online : 10 JUN 2010, DOI: 10.1111/j.1475-1305.2009.00730.x

  6. Blue Light: A Fascinating Journey (Nobel Lecture)

    Angewandte Chemie International Edition

    Volume 54, Issue 27, June 26, 2015, Pages: 7750–7763, Prof. Isamu Akasaki

    Version of Record online : 27 MAY 2015, DOI: 10.1002/anie.201502664

  7. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices

    Laser & Photonics Reviews

    Volume 7, Issue 4, July 2013, Pages: 572–579, Wei Lin, Wei Jiang, Na Gao, Duanjun Cai, Shuping Li and Junyong Kang

    Version of Record online : 24 APR 2013, DOI: 10.1002/lpor.201200118

  8. Fascinating journeys into blue light (Nobel Lecture)

    Annalen der Physik

    Volume 527, Issue 5-6, June 2015, Pages: 311–326, Isamu Akasaki

    Version of Record online : 12 MAY 2015, DOI: 10.1002/andp.201500803

  9. You have free access to this content
    Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

    Chemical Vapor Deposition

    Volume 21, Issue 1-2-3, March 2015, Pages: 33–40, Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang

    Version of Record online : 18 DEC 2014, DOI: 10.1002/cvde.201407100

  10. Al(Ga)N/GaN high electron mobility transistors on silicon

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1049–1058, Yvon Cordier

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201532070

  11. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates

    physica status solidi (a)

    Volume 213, Issue 12, December 2016, Pages: 3078–3102, Zi-Hui Zhang, Yonghui Zhang, Wengang Bi, Hilmi Volkan Demir and Xiao Wei Sun

    Version of Record online : 27 JUN 2016, DOI: 10.1002/pssa.201600281

  12. Strain analysis of InGaN/GaN multi quantum well LED structures

    Crystal Research and Technology

    Volume 47, Issue 8, August 2012, Pages: 824–833, S. Şebnem Çetin, M. Kemal Öztürk, S. Özçelik and E. Özbay

    Version of Record online : 20 JUN 2012, DOI: 10.1002/crat.201100222

  13. Recent Progress on Piezotronic and Piezo-Phototronic Effects in III-Group Nitride Devices and Applications

    Advanced Engineering Materials

    Chunhua Du, Weiguo Hu and Zhong Lin Wang

    Version of Record online : 6 DEC 2017, DOI: 10.1002/adem.201700760

  14. GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1195–1200, Mateusz Wośko, Bogdan Paszkiewicz, Andrej Vincze, Tomasz Szymański and Regina Paszkiewicz

    Version of Record online : 21 JAN 2015, DOI: 10.1002/pssb.201451596

  15. Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

    Advanced Materials

    Volume 28, Issue 33, September 7, 2016, Pages: 7234–7242, Xingfu Wang, Ruomeng Yu, Chunyan Jiang, Weiguo Hu, Wenzhuo Wu, Yong Ding, Wenbo Peng, Shuti Li and Zhong Lin Wang

    Version of Record online : 3 JUN 2016, DOI: 10.1002/adma.201601721

  16. Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD

    physica status solidi (a)

    Volume 209, Issue 3, March 2012, Pages: 434–438, Özgür Kelekçi, Pınar T. Taşlı, HongBo Yu, Mehmet Kasap, Süleyman Özçelik and Ekmel Özbay

    Version of Record online : 20 JAN 2012, DOI: 10.1002/pssa.201100313

  17. III-Nitride Light-Emitting Diodes

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Kai Ding, Vitaliy Avrutin, Ümit Özgür and Hadis Morkoç

    Published Online : 14 NOV 2017, DOI: 10.1002/047134608X.W6014.pub2

  18. Modulation-Doped Field-Effect Transistors (MODFET)

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Congyong Zhu, Romualdo A. Ferreyra and Hadis Morkoç

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W3149.pub2

  19. Semiconductor Nanowires

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Lorenzo Rigutti

    Published Online : 15 SEP 2014, DOI: 10.1002/047134608X.W8215

  20. Suppression of Iron Memory Effect in GaN Epitaxial Layers

    physica status solidi (b)

    Stefano Leone, Fouad Benkhelifa, Lutz Kirste, Christian Manz, Stefan Mueller, Ruediger Quay and Tim Stadelmann

    Version of Record online : 18 OCT 2017, DOI: 10.1002/pssb.201700377