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There are 32357 results for: content related to: Silicon nanocrystals from high-temperature annealing: Characterization on device level

  1. A Membrane Device for Substrate-Free Photovoltaic Characterization of Quantum Dot Based p-i-n Solar Cells

    Advanced Materials

    Volume 24, Issue 23, June 19, 2012, Pages: 3124–3129, Philipp Löper, David Stüwe, Matthias Künle, Martin Bivour, Christian Reichel, Rainer Neubauer, Manuel Schnabel, Martin Hermle, Oliver Eibl, Stefan Janz, Margit Zacharias and Stefan W. Glunz

    Version of Record online : 16 MAY 2012, DOI: 10.1002/adma.201200539

  2. The effect of high temperature annealing process on crystallization process of polypropylene, mechanical properties, and surface quality of plastic parts

    Journal of Applied Polymer Science

    Volume 132, Issue 46, December 10, 2015, Weihua Wang, Guoqun Zhao, Xianghong Wu and Zhen Zhai

    Version of Record online : 13 AUG 2015, DOI: 10.1002/app.42773

  3. Electrical properties of hydrogen-implanted Si annealed under high hydrostatic pressure

    Crystal Research and Technology

    Volume 38, Issue 3-5, April 2003, Pages: 336–343, M. Kaniewska and A. Misiuk

    Version of Record online : 10 APR 2003, DOI: 10.1002/crat.200310041

  4. Effect of high-temperature annealing on the elastoplastic response of isotactic polypropylene in loading–unloading tests

    Journal of Applied Polymer Science

    Volume 90, Issue 1, 3 October 2003, Pages: 186–196, A. D. Drozdov and J. de C. Christiansen

    Version of Record online : 25 JUL 2003, DOI: 10.1002/app.12628

  5. Effect of low-temperature annealing on dimensional stability of poly(ethylene 2,6-naphthalene dicarboxylate) fibers melt-spun at high speed

    Journal of Applied Polymer Science

    Volume 95, Issue 2, 15 January 2005, Pages: 212–218, Young Ah Kang, Kyoung Hou Kim, Hyun Hok Cho and Takeshi Kikutani

    Version of Record online : 22 NOV 2004, DOI: 10.1002/app.21183

  6. Dislocation density reduction limited by inclusions in kerfless high-performance multicrystalline silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 9, September 2015, Pages: 503–506, Sergio Castellanos and Tonio Buonassisi

    Version of Record online : 19 AUG 2015, DOI: 10.1002/pssr.201510239

  7. DLTS studies of low-t emperature annealing in lithium-d oped silicon

    physica status solidi (a)

    Volume 130, Issue 1, 16 March 1992, Pages: 53–60, N. V. Brilliantov, A. I. Rudenko, Yu. V. Shcherbakov and V. V. Zverev

    Version of Record online : 16 FEB 2006, DOI: 10.1002/pssa.2211300107

  8. Influence of activation energy and sensitivity to hydrogen embrittlement on fatigue strength degradation by irreversible hydrogen in high-strength steels

    Fatigue & Fracture of Engineering Materials & Structures

    Volume 34, Issue 5, May 2011, Pages: 363–373, M. NAKATANI and K. MINOSHIMA

    Version of Record online : 28 OCT 2010, DOI: 10.1111/j.1460-2695.2010.01526.x

  9. The use of infrared spectroscopy for determination of polypropylene stereoregularity

    Journal of Applied Polymer Science

    Volume 36, Issue 2, 5 July 1988, Pages: 279–293, David R. Burfield and Patrick S. T. Loi

    Version of Record online : 9 MAR 2003, DOI: 10.1002/app.1988.070360203

  10. Silicon Nanocrystals: Photosensitizers for Oxygen Molecules

    Advanced Materials

    Volume 17, Issue 21, November, 2005, Pages: 2531–2544, D. Kovalev and M. Fujii

    Version of Record online : 29 SEP 2005, DOI: 10.1002/adma.200500328

  11. Study of acceptor centers in GaAs after high temperature annealing. Experiments and calculation

    physica status solidi (c)

    Volume 0, Issue 2, February 2003, Pages: 665–668, A. Nouiri, Y. Sayad and A. Djemel

    Version of Record online : 27 JAN 2003, DOI: 10.1002/pssc.200306208

  12. Initial anomalous diffusion of boron atoms at low-temperature annealing

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 84, Issue 10, October 2001, Pages: 59–64, Tomoya Saito, Jianxin Xia, Ryangsu Kim, Takenori Aoki, Hiroyuki Kobayashi, Yoshikazu Furuta, Yoshinari Kamakura and Kenji Taniguchi

    Version of Record online : 18 SEP 2001, DOI: 10.1002/ecjb.1066

  13. Surface Breakaway Decomposition of Perovskite 0.91PZN–0.09PT during High-Temperature Annealing

    Journal of the American Ceramic Society

    Volume 85, Issue 11, November 2002, Pages: 2817–2826, Leong-Chew Lim, Rongmin Liu and Francis J. Kumar

    Version of Record online : 20 DEC 2004, DOI: 10.1111/j.1151-2916.2002.tb00534.x

  14. Innovative Quantum Effects in Silicon for Photovoltaic Applications

    Advanced Silicon Materials for Photovoltaic Applications

    Zhizhong Yuan, Aleksei Anopchenko, Lorenzo Pavesi, Pages: 355–391, 2012

    Published Online : 13 JUN 2012, DOI: 10.1002/9781118312193.ch10

  15. Effect of high-temperature annealing on PL spectra of silicon nitride

    physica status solidi (a)

    Volume 90, Issue 1, 16 July 1985, Pages: 355–358, V. V. Vasilev and I. P. Mikhailovskii

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210900137

  16. Low-Temperature Activation of Hematite Nanowires for Photoelectrochemical Water Oxidation

    ChemSusChem

    Volume 7, Issue 3, March 2014, Pages: 848–853, Yichuan Ling, Gongming Wang, Hanyu Wang, Yi Yang and Prof. Yat Li

    Version of Record online : 3 FEB 2014, DOI: 10.1002/cssc.201301013

  17. Defect engineering of Si nanocrystal interfaces

    physica status solidi (a)

    Volume 209, Issue 12, December 2012, Pages: 2449–2454, Margit Zacharias, Daniel Hiller, Andreas Hartel and Sebastian Gutsch

    Version of Record online : 26 NOV 2012, DOI: 10.1002/pssa.201200734

  18. Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen

    physica status solidi (c)

    Volume 9, Issue 10-11, October 2012, Pages: 2194–2197, Moustafa Y. Ghannam, Yaser Abdul Raheem, Abdul Azeez Alomar and Jef Poortmans

    Version of Record online : 19 SEP 2012, DOI: 10.1002/pssc.201200181

  19. Deformation state of 49BFmath image-implanted Si wafers after high-temperature thermal annealing

    Crystal Research and Technology

    Volume 20, Issue 9, September 1985, Pages: 1239–1243, Dr. I. S. Vassilev, Dr. I. N. Petrov, P. A. Botev, Dr. Z. Furmanik and Prof. Dr. J. Auleytner

    Version of Record online : 19 FEB 2006, DOI: 10.1002/crat.2170200923

  20. Synergistic mechanical response in blends of diene polymers and their complexes with palladium chloride

    Journal of Polymer Science Part B: Polymer Physics

    Volume 34, Issue 16, 20 September 1996, Pages: 2675–2687, Laurence A. Belfiore, Pronab Das and Francis Bossé

    Version of Record online : 7 DEC 1998, DOI: 10.1002/(SICI)1099-0488(19961130)34:16<2675::AID-POLB1>3.0.CO;2-P