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There are 4759 results for: content related to: HCl gas gettering of low-cost silicon

  1. Gettering in Silicon

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    S. A. McHugo and H. Hieslmair

    Published Online : 27 DEC 1999, DOI: 10.1002/047134608X.W3209

  2. Gettering Processes and the Role of Extended Defects

    Advanced Silicon Materials for Photovoltaic Applications

    Michael Seibt, Vitaly Kveder, Pages: 127–188, 2012

    Published Online : 13 JUN 2012, DOI: 10.1002/9781118312193.ch4

  3. High-Temperature Properties of Transition Elements in Silicon

    Standard Article

    Materials Science and Technology

    Wolfgang Schröter, Michael Seibt and Dieter Gilles

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0251

  4. High-Temperature Properties of Transition Elements in Silicon

    Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

    Wolfgang Schröter, Michael Seibt, Dieter Gilles, Pages: 597–660, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621842.ch10

  5. High-Temperature Properties of Transition Elements in Silicon

    Handbook of Semiconductor Technology Set

    Wolfgang Schröter, Michael Seibt, Dieter Gilles, Pages: 597–660, 2008

    Published Online : 4 JUN 2008, DOI: 10.1002/9783527619290.ch10

  6. Dynamic modelling of the diffusion-segregation gettering. Application to the gettering by Al in Si

    physica status solidi (a)

    Volume 157, Issue 1, 16 September 1996, Pages: 37–48, A. Luque, C. del Cañizo, R. Lagos and A. Moehlecke

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2211570106

  7. Gettering of transition metals by porous silicon in epitaxial silicon solar cells

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1866–1871, Hariharsudan Sivaramakrishnan Radhakrishnan, Chihak Ahn, Jan Van Hoeymissen, Frédéric Dross, Nick Cowern, Kris Van Nieuwenhuysen, Ivan Gordon, Robert Mertens and Jef Poortmans

    Version of Record online : 7 SEP 2012, DOI: 10.1002/pssa.201200232

  8. Gettering of iron in CZ-silicon by polysilicon layer

    physica status solidi (c)

    Volume 8, Issue 3, March 2011, Pages: 751–754, A. Haarahiltunen, M. Yli-Koski, H. Talvitie, V. Vähänissi, J. Lindroos and H. Savin

    Version of Record online : 23 NOV 2010, DOI: 10.1002/pssc.201000194

  9. Physical mechanisms of boron diffusion gettering of iron in silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 5-6, June 2010, Pages: 136–138, V. Vähänissi, A. Haarahiltunen, H. Talvitie, M. Yli-Koski, J. Lindroos and H. Savin

    Version of Record online : 21 APR 2010, DOI: 10.1002/pssr.201004105

  10. Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities

    Progress in Photovoltaics: Research and Applications

    Supawan Joonwichien, Isao Takahashi, Kentaro Kutsukake and Noritaka Usami

    Version of Record online : 28 JUN 2016, DOI: 10.1002/pip.2795

  11. Influence of precipitates on the kinetics of iron gettering from the Si wafers by the Al layers

    physica status solidi (c)

    Volume 8, Issue 3, March 2011, Pages: 767–770, Andrey Sarikov, Victor Naseka and Vladimir Litovchenko

    Version of Record online : 23 NOV 2010, DOI: 10.1002/pssc.201000196

  12. Gettering in multicrystalline silicon wafers with screen-printed emitters

    Progress in Photovoltaics: Research and Applications

    Volume 19, Issue 8, December 2011, Pages: 946–953, T.M. Pletzer, E.F.R. Stegemann, H. Windgassen, S. Suckow, D.L. Bätzner and H. Kurz

    Version of Record online : 23 FEB 2011, DOI: 10.1002/pip.1099

  13. Gettering effect in grain boundaries of multi-crystalline silicon

    physica status solidi (c)

    Volume 9, Issue 10-11, October 2012, Pages: 1937–1941, H. Nouri, M. Bouaïcha, M. Ben Rabha and B. Bessaïs

    Version of Record online : 14 SEP 2012, DOI: 10.1002/pssc.201200193

  14. Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

    physica status solidi (c)

    Volume 2, Issue 9, June 2005, Pages: 3486–3490, N. Khedher, M. Hajji, B. Bessaïs, H. Ezzaouia, A. Selmi and R. Bennaceur

    Version of Record online : 6 JUN 2005, DOI: 10.1002/pssc.200461231

  15. Analysis of simultaneous boron and phosphorus diffusion gettering in silicon

    physica status solidi (a)

    Volume 207, Issue 11, November 2010, Pages: 2589–2592, J. Schön, M. C. Schubert, W. Warta, H. Savin and A. Haarahiltunen

    Version of Record online : 2 NOV 2010, DOI: 10.1002/pssa.201026333

  16. Impact of phosphorus gettering parameters and initial iron level on silicon solar cell properties

    Progress in Photovoltaics: Research and Applications

    Volume 21, Issue 5, August 2013, Pages: 1127–1135, Ville Vähänissi, Antti Haarahiltunen, Heli Talvitie, Marko Yli-Koski and Hele Savin

    Version of Record online : 2 MAY 2012, DOI: 10.1002/pip.2215

  17. A statistical model for the gettering of impurities on an atomistic scale

    physica status solidi (c)

    Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont

    Version of Record online : 11 JUL 2016, DOI: 10.1002/pssc.201600031

  18. The Role of Dopant and Segregation Annealing in Silicon p–n Junction Gettering

    physica status solidi (a)

    Volume 103, Issue 2, 16 October 1987, Pages: 643–654, G. F. Cerofolini, M. L. Polignano, H. Bender and C. Claeys

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssa.2211030239

  19. Iron segregation in silicon-on-insulator wafer with polysilicon interlayer

    physica status solidi (a)

    Volume 209, Issue 4, April 2012, Pages: 724–726, M. Yli-Koski, A. Haarahiltunen, J. Hintsala and H. Savin

    Version of Record online : 13 FEB 2012, DOI: 10.1002/pssa.201127718

  20. Gettering of copper in proton- and helium-bombarded buried regions of gallium phosphide

    physica status solidi (a)

    Volume 106, Issue 1, 16 March 1988, Pages: 73–79, C. Aschekon, H. A. Klose, W. Frentkup and M. Griepentrog

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssa.2211060110