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There are 4181 results for: content related to: HCl gas gettering of low-cost silicon

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  1. Gettering Processes and the Role of Extended Defects

    Advanced Silicon Materials for Photovoltaic Applications

    Michael Seibt, Vitaly Kveder, Pages: 127–188, 2012

    Published Online : 13 JUN 2012, DOI: 10.1002/9781118312193.ch4

  2. High-Temperature Properties of Transition Elements in Silicon

    Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

    Wolfgang Schröter, Michael Seibt, Dieter Gilles, Pages: 597–660, 2008

    Published Online : 28 MAY 2008, DOI: 10.1002/9783527621842.ch10

  3. High-Temperature Properties of Transition Elements in Silicon

    Handbook of Semiconductor Technology Set

    Wolfgang Schröter, Michael Seibt, Dieter Gilles, Pages: 597–660, 2008

    Published Online : 4 JUN 2008, DOI: 10.1002/9783527619290.ch10

  4. Gettering of transition metals by porous silicon in epitaxial silicon solar cells

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1866–1871, Hariharsudan Sivaramakrishnan Radhakrishnan, Chihak Ahn, Jan Van Hoeymissen, Frédéric Dross, Nick Cowern, Kris Van Nieuwenhuysen, Ivan Gordon, Robert Mertens and Jef Poortmans

    Article first published online : 7 SEP 2012, DOI: 10.1002/pssa.201200232

  5. Dynamic modelling of the diffusion-segregation gettering. Application to the gettering by Al in Si

    physica status solidi (a)

    Volume 157, Issue 1, 16 September 1996, Pages: 37–48, A. Luque, C. del Cañizo, R. Lagos and A. Moehlecke

    Article first published online : 17 FEB 2006, DOI: 10.1002/pssa.2211570106

  6. Physical mechanisms of boron diffusion gettering of iron in silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 4, Issue 5-6, June 2010, Pages: 136–138, V. Vähänissi, A. Haarahiltunen, H. Talvitie, M. Yli-Koski, J. Lindroos and H. Savin

    Article first published online : 21 APR 2010, DOI: 10.1002/pssr.201004105

  7. Iron segregation in silicon-on-insulator wafer with polysilicon interlayer

    physica status solidi (a)

    Volume 209, Issue 4, April 2012, Pages: 724–726, M. Yli-Koski, A. Haarahiltunen, J. Hintsala and H. Savin

    Article first published online : 13 FEB 2012, DOI: 10.1002/pssa.201127718

  8. Engineering metal precipitate size distributions to enhance gettering in multicrystalline silicon

    physica status solidi (a)

    Volume 209, Issue 10, October 2012, Pages: 1861–1865, Jasmin Hofstetter, David P. Fenning, Jean-François Lelièvre, Carlos del Cañizo and Tonio Buonassisi

    Article first published online : 14 AUG 2012, DOI: 10.1002/pssa.201200360

  9. The Role of Dopant and Segregation Annealing in Silicon p–n Junction Gettering

    physica status solidi (a)

    Volume 103, Issue 2, 16 October 1987, Pages: 643–654, G. F. Cerofolini, M. L. Polignano, H. Bender and C. Claeys

    Article first published online : 15 FEB 2006, DOI: 10.1002/pssa.2211030239

  10. Gettering of iron in CZ-silicon by polysilicon layer

    physica status solidi (c)

    Volume 8, Issue 3, March 2011, Pages: 751–754, A. Haarahiltunen, M. Yli-Koski, H. Talvitie, V. Vähänissi, J. Lindroos and H. Savin

    Article first published online : 23 NOV 2010, DOI: 10.1002/pssc.201000194

  11. Influence of precipitates on the kinetics of iron gettering from the Si wafers by the Al layers

    physica status solidi (c)

    Volume 8, Issue 3, March 2011, Pages: 767–770, Andrey Sarikov, Victor Naseka and Vladimir Litovchenko

    Article first published online : 23 NOV 2010, DOI: 10.1002/pssc.201000196

  12. Gettering in Silicon

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    S. A. McHugo and H. Hieslmair

    Published Online : 27 DEC 1999, DOI: 10.1002/047134608X.W3209

  13. Gettering of copper in proton- and helium-bombarded buried regions of gallium phosphide

    physica status solidi (a)

    Volume 106, Issue 1, 16 March 1988, Pages: 73–79, C. Aschekon, H. A. Klose, W. Frentkup and M. Griepentrog

    Article first published online : 15 FEB 2006, DOI: 10.1002/pssa.2211060110

  14. Gettering effect in grain boundaries of multi-crystalline silicon

    physica status solidi (c)

    Volume 9, Issue 10-11, October 2012, Pages: 1937–1941, H. Nouri, M. Bouaïcha, M. Ben Rabha and B. Bessaïs

    Article first published online : 14 SEP 2012, DOI: 10.1002/pssc.201200193

  15. Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

    physica status solidi (c)

    Volume 2, Issue 9, June 2005, Pages: 3486–3490, N. Khedher, M. Hajji, B. Bessaïs, H. Ezzaouia, A. Selmi and R. Bennaceur

    Article first published online : 6 JUN 2005, DOI: 10.1002/pssc.200461231

  16. Minority carrier lifetime improvement in silicon through laser damage gettering

    physica status solidi (a)

    Volume 58, Issue 1, 16 March 1980, Pages: 127–134, K. H. Yang and G. H. Schwuttke

    Article first published online : 17 FEB 2006, DOI: 10.1002/pssa.2210580115

  17. You have free access to this content
    Index

    Silicon Devices: Structures and Processing

    Kenneth A. Jackson, Pages: 195–202, 2007

    Published Online : 21 DEC 2007, DOI: 10.1002/9783527611805.index

  18. High-Temperature Properties of Transition Elements in Silicon

    Standard Article

    Materials Science and Technology

    Wolfgang Schröter, Michael Seibt and Dieter Gilles

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0251

  19. Gettering and precipitation behaviour of MBE related heavy metal impurities in dependence on silicon self-interstitial supersaturation

    physica status solidi (a)

    Volume 150, Issue 2, 16 August 1995, Pages: 733–742, G. Kissinger, G. Morgenstern, D. Knoll and P. Schley

    Article first published online : 17 FEB 2006, DOI: 10.1002/pssa.2211500216

  20. Present status and future of silicon crystal technology for high-performance silicon VLSI

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 73, Issue 3, 1990, Pages: 30–42, Hideki Tsuya

    Article first published online : 22 MAR 2007, DOI: 10.1002/ecjb.4420730304

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