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There are 54806 results for: content related to: Low interface state density and low leakage current of atomic-layer deposited TiO 2 /Al 2 O 3 /sulfur-treated GaAs

  1. Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials’ Physical Properties

    Advanced Functional Materials

    Volume 22, Issue 9, May 9, 2012, Pages: 1782–1801, Rinaldo Trotta, Antonio Polimeni and Mario Capizzi

    Version of Record online : 16 MAR 2012, DOI: 10.1002/adfm.201102053

  2. The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiy Films

    Chemical Vapor Deposition

    Volume 21, Issue 7-8-9, September 2015, Pages: 166–175, Kamran Forghani, Yingxin Guan, Adam Wood, Susan Babock, Luke Mawst and Thomas F. Kuech

    Version of Record online : 27 APR 2015, DOI: 10.1002/cvde.201507160

  3. GaAs nanowires grown by MOVPE

    physica status solidi (b)

    Volume 247, Issue 6, June 2010, Pages: 1294–1309, Jens Bauer, Hendrik Paetzelt, Volker Gottschalch and Gerald Wagner

    Version of Record online : 23 MAR 2010, DOI: 10.1002/pssb.200945495

  4. n-GaAs/InGaP/p-GaAs Core-Multishell Nanowire Diodes for Efficient Light-to-Current Conversion

    Advanced Functional Materials

    Volume 22, Issue 5, March 7, 2012, Pages: 929–936, Christoph Gutsche, Andrey Lysov, Daniel Braam, Ingo Regolin, Gregor Keller, Zi-An Li, Martin Geller, Marina Spasova, Werner Prost and Franz-Josef Tegude

    Version of Record online : 21 DEC 2011, DOI: 10.1002/adfm.201101759

  5. Metal Semiconductor Field Effect Transistors

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Kazushige Horio

    Published Online : 27 DEC 1999, DOI: 10.1002/047134608X.W3146

  6. Top-Down Fabrication of Semiconductor Nanowires with Alternating Structures along their Longitudinal and Transverse Axes


    Volume 1, Issue 11, November 2005, Pages: 1052–1057, Yugang Sun, Rachel A. Graff, Michael S. Strano and John A. Rogers

    Version of Record online : 5 SEP 2005, DOI: 10.1002/smll.200500094

  7. Evaluation of robustness to surface conditions of the target factor analysis method for determining the dielectric function from reflection electron energy loss spectra: Application to GaAs

    Surface and Interface Analysis

    Volume 45, Issue 6, June 2013, Pages: 985–992, H. Jin, H. Shinotsuka, H. Yoshikawa, H. Iwai, M. Arai, S. Tanuma and S. Tougaard

    Version of Record online : 8 JAN 2013, DOI: 10.1002/sia.5196

  8. Gallium Arsenide

    Standard Article

    Encyclopedia of Applied Physics

    David C. Look

    Published Online : 15 APR 2003, DOI: 10.1002/3527600434.eap151

  9. Glycosamino Acids: Building Blocks for Combinatorial Synthesis—Implications for Drug Discovery

    Angewandte Chemie International Edition

    Volume 41, Issue 2, January 18, 2002, Pages: 230–253, Frank Schweizer

    Version of Record online : 18 JAN 2002, DOI: 10.1002/1521-3773(20020118)41:2<230::AID-ANIE230>3.0.CO;2-L

  10. You have full text access to this OnlineOpen article
    In situ X-ray diffraction of GaAs/MnSb/Ga(In)As heterostructures

    physica status solidi (b)

    Volume 254, Issue 2, February 2017, P. J. Mousley, C. W. Burrows, M. J. Ashwin, M. Takahasi, T. Sasaki and G. R. Bell

    Version of Record online : 25 OCT 2016, DOI: 10.1002/pssb.201600503

  11. Stable 16.2% Efficient Surface Plasmon-Enhanced Graphene/GaAs Heterostructure Solar Cell

    Advanced Energy Materials

    Volume 6, Issue 21, November 9, 2016, Shi-Sheng Lin, Zhi-Qian Wu, Xiao-Qiang Li, Yue-Jiao Zhang, Sheng-Jiao Zhang, Peng Wang, Rajapandiyan Panneerselvam and Jian-Feng Li

    Version of Record online : 5 AUG 2016, DOI: 10.1002/aenm.201600822

  12. Point Defects, Diffusion, and Precipitation

    Standard Article

    Materials Science and Technology

    The Y. Tan and Ulrich M. Gösele

    Published Online : 15 FEB 2013, DOI: 10.1002/9783527603978.mst0246

  13. Impact of spatial separation of type-II GaSb quantum dots from the depletion region on the conversion efficiency limit of GaAs solar cells

    Progress in Photovoltaics: Research and Applications

    Volume 23, Issue 8, August 2015, Pages: 1003–1016, Ara Kechiantz, Andrei Afanasev and Jean-Louis Lazzari

    Version of Record online : 6 JUN 2014, DOI: 10.1002/pip.2521

  14. Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating

    Macromolecular Rapid Communications

    Volume 38, Issue 12, June 2017, Xiaoxue Wang, Sema Ermez, Hilal Goktas, Silvija Gradečak and Karen Gleason

    Version of Record online : 13 APR 2017, DOI: 10.1002/marc.201700055

  15. Epitaxial growth of lateral quantum dot molecules

    physica status solidi (b)

    Volume 249, Issue 4, April 2012, Pages: 702–709, Eugenio Zallo, Paola Atkinson, Lijuan Wang, Armando Rastelli and Oliver G. Schmidt

    Version of Record online : 20 FEB 2012, DOI: 10.1002/pssb.201100772

  16. Surfactantless Synthesis of Silver Nanoplates and Their Application in SERS


    Volume 3, Issue 11, November 5, 2007, Pages: 1964–1975, Yugang Sun and Gary P. Wiederrecht

    Version of Record online : 12 OCT 2007, DOI: 10.1002/smll.200700484

  17. Semiconductors, Compound—Electronic Properties

    Standard Article

    Encyclopedia of Applied Physics

    Sandip Tiwari

    Published Online : 15 APR 2003, DOI: 10.1002/3527600434.eap418

  18. Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays

    Advanced Energy Materials

    Volume 2, Issue 10, October, 2012, Pages: 1254–1260, Dong Liang, Yijie Huo, Yangsen Kang, Ken Xingze Wang, Anjia Gu, Meiyueh Tan, Zongfu Yu, Shuang Li, Jieyang Jia, Xinyu Bao, Shuang Wang, Yan Yao, H.-S. Philip Wong, Shanhui Fan, Yi Cui and James S. Harris

    Version of Record online : 31 MAY 2012, DOI: 10.1002/aenm.201200022

  19. Gallium Arsenide Field Effect Transistor Logic Circuits

    Standard Article

    Wiley Encyclopedia of Electrical and Electronics Engineering

    Douglas J. Fouts and Todd R. Weatherford

    Published Online : 27 DEC 1999, DOI: 10.1002/047134608X.W6809

  20. Effect of high-energy light-ion irradiation on SI-GaAs and GaAs:Cr as observed by Raman spectroscopy

    Journal of Raman Spectroscopy

    Volume 43, Issue 2, February 2012, Pages: 344–350, Shramana Mishra, D. Kabiraj, Anushree Roy and Subhasis Ghosh

    Version of Record online : 12 AUG 2011, DOI: 10.1002/jrs.3039