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There are 121825 results for: content related to: Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces

  1. Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A

    physica status solidi (b)

    Volume 253, Issue 4, April 2016, Pages: 644–647, Hisashi Yamada, Osamu Ichikawa, Noboru Fukuhara and Masahiko Hata

    Version of Record online : 2 DEC 2015, DOI: 10.1002/pssb.201552466

  2. Synchrotron radiation photoemission study of interface formation between MgO and the atomically clean In0.53Ga0.47As surface

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 2, February 2014, Pages: 167–171, Lalit Chauhan and Greg Hughes

    Version of Record online : 19 NOV 2013, DOI: 10.1002/pssr.201308192

  3. Growth and properties of InGaAs nanowires on silicon

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 1, January 2014, Pages: 11–30, Gregor Koblmüller and Gerhard Abstreiter

    Version of Record online : 2 DEC 2013, DOI: 10.1002/pssr.201308207

  4. Fabrication and electrical characterization of InGaAs MISFET using ultrathin Si interface control layer

    Electronics and Communications in Japan (Part II: Electronics)

    Volume 77, Issue 1, January 1994, Pages: 66–76, Yong-Gui Xie, Satoshi Suzuki, Takayuki Sawada and Hideki Hasegawa

    Version of Record online : 22 MAR 2007, DOI: 10.1002/ecjb.4420770107

  5. Micro-Raman study on chirped InGaAs–InAlAs superlattices

    physica status solidi (a)

    Volume 210, Issue 11, November 2013, Pages: 2364–2368, Yongzheng Hu, Lijun Wang, Fengqi Liu, Jinchuan Zhang, Junqi Liu and Zhanguo Wang

    Version of Record online : 6 AUG 2013, DOI: 10.1002/pssa.201330002

  6. Au-free Si MOS compatible Ni/Ge/Al ohmic contacts to n+-InGaAs

    physica status solidi (a)

    Volume 212, Issue 4, April 2015, Pages: 804–808, Jungwoo Oh, Seonno Yoon, Bugeun Ki, Yunwon Song and Hi-Deok Lee

    Version of Record online : 14 JAN 2015, DOI: 10.1002/pssa.201431713

  7. 2-µm Wavelength Lasers Employing InP-based Strained-Layer Quantum Wells

    Long-Wavelength Infrared Semiconductor Lasers

    Manabu Mitsuhara, Mamoru Oishi, Pages: 19–68, 2005

    Published Online : 28 JAN 2005, DOI: 10.1002/0471649813.ch2

  8. Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE

    physica status solidi (b)

    Volume 234, Issue 3, December 2002, Pages: 782–786, S. Sanorpim, F. Nakajima, S. Imura, R. Katayama, J. Wu, K. Onabe and Y. Shiraki

    Version of Record online : 3 DEC 2002, DOI: 10.1002/1521-3951(200212)234:3<782::AID-PSSB782>3.0.CO;2-0

  9. Novel Heterogeneous Integration Technology of III–V Layers and InGaAs FinFETs to Silicon

    Advanced Functional Materials

    Volume 24, Issue 28, July 23, 2014, Pages: 4420–4426, Xing Dai, Binh-Minh Nguyen, Yoontae Hwang, Cesare Soci and Shadi A. Dayeh

    Version of Record online : 7 APR 2014, DOI: 10.1002/adfm.201400105

  10. Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement

    Progress in Photovoltaics: Research and Applications

    Volume 21, Issue 3, May 2013, Pages: 344–350, Swee Hoe Lim, Jing-Jing Li, Elizabeth H. Steenbergen and Yong-Hang Zhang

    Version of Record online : 30 NOV 2011, DOI: 10.1002/pip.1215

  11. You have full text access to this OnlineOpen article
    Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons

    Progress in Photovoltaics: Research and Applications

    Volume 25, Issue 2, February 2017, Pages: 161–174, Mitsuru Imaizumi, Tetsuya Nakamura, Tatsuya Takamoto, Takeshi Ohshima and Michio Tajima

    Version of Record online : 28 NOV 2016, DOI: 10.1002/pip.2840

  12. You have free access to this content
    Capping vertically aligned InGaAs/GaAs(Sb) quantum dots with a AlGaAsSb spacer layer in intermediate-band solar cell devices

    Progress in Photovoltaics: Research and Applications

    Volume 25, Issue 1, January 2017, Pages: 76–86, Wei-Sheng Liu, Hsiao-Chien Lin and Ren-Yo Liu

    Version of Record online : 12 SEP 2016, DOI: 10.1002/pip.2815

  13. Photoluminescence studies of self-assembled InAs quantum dots formed on InGaAs/GaAs quantum well

    Laser Physics Letters

    Volume 2, Issue 11, November 2005, Pages: 538–543, X. Mu, Y. J. Ding, Z. Wang and G. J. Salamo

    Version of Record online : 22 JUL 2005, DOI: 10.1002/lapl.200510037

  14. High-resolution transmission electron microscopy observations of InGaAs/InP multilayer heterostructures

    physica status solidi (a)

    Volume 127, Issue 2, 16 October 1991, Pages: 385–396, Y. Yabuuchi, Y. Takahashi, N. Ohtsuka, T. Isshiki, M. Tsujikura, H. Saijo and M. Shiojiri

    Version of Record online : 15 FEB 2006, DOI: 10.1002/pssa.2211270213

  15. Optical Properties of Barrier-Modulated InGaAs/GaAs Quantum Wires

    physica status solidi (b)

    Volume 173, Issue 1, 1 September 1992, Pages: 323–330, Ch. Gré;us, A. Orth, F. Daiminger, L. V. Butov, T. L. Reinecke and A. Forchel

    Version of Record online : 19 FEB 2006, DOI: 10.1002/pssb.2221730131

  16. Lattice defects in LPE InP[BOND]InGaAsP[BOND]InGaAs structure epitaxial layers on InP substrates

    physica status solidi (a)

    Volume 70, Issue 1, 16 March 1982, Pages: 277–286, K. Ishida, Y. Matsumoto and K. Taguchi

    Version of Record online : 17 FEB 2006, DOI: 10.1002/pssa.2210700133

  17. Characterization of InGaAs/GaNAs strain-compensated quantum dot solar cells

    physica status solidi (c)

    Volume 9, Issue 3-4, March 2012, Pages: 972–974, S. Nagarajan, M. Ali, H. Jussila, P. Mattila, A. Aierken, M. Sopanen and H. Lipsanen

    Version of Record online : 29 FEB 2012, DOI: 10.1002/pssc.201100333

  18. Self-organized microstructure growth

    Chemical Vapor Deposition

    Volume 1, Issue 3, November 1995, Pages: 81–88, Dr. Richard Nötzel, Prof. Takashi Fukui, Prof. Hideki Hasegawa, Dr. Jiro Temmyo, Dr. Atsuo Kozen and Dr. Toshiaki Tamamura

    Version of Record online : 14 SEP 2004, DOI: 10.1002/cvde.19950010305

  19. Concentration-dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

    Volume 24, Issue 5, September/October 2011, Pages: 465–477, P. S. Menon, K. Kandiah, A. A. Ehsan and S. Shaari

    Version of Record online : 8 DEC 2010, DOI: 10.1002/jnm.792

  20. Adhesive bonding for mechanically stacked solar cells

    Progress in Photovoltaics: Research and Applications

    Volume 23, Issue 9, September 2015, Pages: 1080–1090, Ian Mathews, Donagh O'Mahony, Kevin Thomas, Emanuele Pelucchi, Brian Corbett and Alan P. Morrison

    Version of Record online : 13 JUN 2014, DOI: 10.1002/pip.2517