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There are 29520 results for: content related to: Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire

  1. Growth of c-axis-oriented aluminum nitride thin films onto different substrates and buffer layers

    Surface and Interface Analysis

    Volume 47, Issue 4, April 2015, Pages: 447–453, T. J. A. Mori, R. D. Della Pace, A. M. H. de Andrade, M. A. Corrêa, P. Stamenov, L. F. Schelp and L. S. Dorneles

    Version of Record online : 18 DEC 2014, DOI: 10.1002/sia.5732

  2. Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures

    physica status solidi (a)

    Volume 209, Issue 2, February 2012, Pages: 266–271, Mustafa Alevli, Cagla Ozgit, Inci Donmez and Necmi Biyikli

    Version of Record online : 24 NOV 2011, DOI: 10.1002/pssa.201127430

  3. Desorption induced GaN quantum dots on (0001) AlN by MOVPE

    physica status solidi (RRL) - Rapid Research Letters

    Volume 9, Issue 9, September 2015, Pages: 526–529, Konrad Bellmann, Farsane Tabataba-Vakili, Tim Wernicke, Andre Strittmatter, Gordon Callsen, Axel Hoffmann and Michael Kneissl

    Version of Record online : 21 AUG 2015, DOI: 10.1002/pssr.201510217

  4. Preparation and properties of aluminum nitride-filled epoxy composites: Effect of filler characteristics and composite processing conditions

    Journal of Applied Polymer Science

    Volume 127, Issue 5, 5 March 2013, Pages: 3456–3466, B. L. Zhu, J. Wang, J. Ma, J. Wu, K. C. Yung and C. S. Xie

    Version of Record online : 22 MAY 2012, DOI: 10.1002/app.37599

  5. Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1089–1095, Xiao-Hang Li, Shuo Wang, Hongen Xie, Yong O. Wei, Tsung-Ting Kao, Md. Mahbub Satter, Shyh-Chiang Shen, Paul Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Alec M. Fischer and Fernando A. Ponce

    Version of Record online : 20 JAN 2015, DOI: 10.1002/pssb.201451571

  6. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    physica status solidi (a)

    Volume 209, Issue 1, January 2012, Pages: 21–24, Piero Gamarra, Cedric Lacam, Michelle Magis, Maurice Tordjman and Marie-Antoinette di Forte Poisson

    Version of Record online : 21 NOV 2011, DOI: 10.1002/pssa.201100090

  7. You have free access to this content
    Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

    Chemical Vapor Deposition

    Volume 21, Issue 1-2-3, March 2015, Pages: 33–40, Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang

    Version of Record online : 18 DEC 2014, DOI: 10.1002/cvde.201407100

  8. Temperature Dependence of the Electrical Properties and Seebeck Coefficient of AlN–SiC Ceramics

    Journal of the American Ceramic Society

    Volume 89, Issue 4, April 2006, Pages: 1295–1299, Ryota Kobayashi, Junichi Tatami, Toru Wakihara, Takeshi Meguro and Katsutoshi Komeya

    Version of Record online : 13 FEB 2006, DOI: 10.1111/j.1551-2916.2005.00837.x

  9. Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 10, October 2013, Pages: 699–712, V. Consonni

    Version of Record online : 29 JUL 2013, DOI: 10.1002/pssr.201307237

  10. Graphoepitaxy of High-Quality GaN Layers on Graphene/6H–SiC

    Advanced Materials Interfaces

    Volume 2, Issue 2, January 21, 2015, András Kovács, Martial Duchamp, Rafal E. Dunin-Borkowski, Rositza Yakimova, Péter L. Neumann, Hannes Behmenburg, Bartosz Foltynski, Cristoph Giesen, Michael Heuken and Béla Pécz

    Version of Record online : 22 DEC 2014, DOI: 10.1002/admi.201400230

  11. Self-organized growth of catalyst-free GaN nano- and micro-rods on Si(111) substrates by MOCVD

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1132–1137, B. Foltynski, C. Giesen and M. Heuken

    Version of Record online : 20 JAN 2015, DOI: 10.1002/pssb.201451508

  12. Effect of sputtering power on surface characteristics and crystal quality of AlN films deposited by pulsed DC reactive sputtering

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1163–1171, Hiroto Takeuchi, Makoto Ohtsuka and Hiroyuki Fukuyama

    Version of Record online : 23 MAR 2015, DOI: 10.1002/pssb.201451599

  13. You have free access to this content
    Effects of Denosumab, Alendronate, or Denosumab Following Alendronate on Bone Turnover, Calcium Homeostasis, Bone Mass and Bone Strength in Ovariectomized Cynomolgus Monkeys

    Journal of Bone and Mineral Research

    Volume 30, Issue 4, April 2015, Pages: 657–669, Paul J Kostenuik, Susan Y Smith, Rana Samadfam, Jacquelin Jolette, Lei Zhou and Michael S Ominsky

    Version of Record online : 25 MAR 2015, DOI: 10.1002/jbmr.2401

  14. Growth of AlN Crystals on SiC Substrates by Thermal Nitridation of Al2O3

    Journal of the American Ceramic Society

    Volume 97, Issue 12, December 2014, Pages: 3781–3786, Yu You, Makoto Ohtsuka, Hideto Miyake and Hiroyuki Fukuyama

    Version of Record online : 22 AUG 2014, DOI: 10.1111/jace.13183

  15. Control of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy

    physica status solidi (c)

    Volume 8, Issue 7-8, July 2011, Pages: 2028–2030, Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada and Akinori Koukitu

    Version of Record online : 21 APR 2011, DOI: 10.1002/pssc.201000954

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    The purine metabolite allantoin enhances abiotic stress tolerance through synergistic activation of abscisic acid metabolism

    Plant, Cell & Environment

    Volume 37, Issue 4, April 2014, Pages: 1022–1036, SHUNSUKE WATANABE, MAYUMI MATSUMOTO, YUKI HAKOMORI, HIROSHI TAKAGI, HIROSHI SHIMADA and ATSUSHI SAKAMOTO

    Version of Record online : 8 NOV 2013, DOI: 10.1111/pce.12218

  17. Effect of the filler size and content on the thermomechanical properties of particulate aluminum nitride filled epoxy composites

    Journal of Applied Polymer Science

    Volume 116, Issue 1, 5 April 2010, Pages: 225–236, K. C. Yung, B. L. Zhu, T. M. Yue and C. S. Xie

    Version of Record online : 1 DEC 2009, DOI: 10.1002/app.31431

  18. Effect of growth stoichiometry on the structural properties of AlN films on thermally nitrided sapphire equation image

    physica status solidi (RRL) - Rapid Research Letters

    Volume 8, Issue 3, March 2014, Pages: 256–259, Kohei Ueno, Eiji Kishikawa, Shigeru Inoue, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima and Hiroyuki Fukuyama

    Version of Record online : 16 DEC 2013, DOI: 10.1002/pssr.201308275

  19. AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs

    physica status solidi (a)

    Volume 213, Issue 12, December 2016, Pages: 3178–3185, Sylvia Hagedorn, Arne Knauer, Anna Mogilatenko, Eberhard Richter and Markus Weyers

    Version of Record online : 1 AUG 2016, DOI: 10.1002/pssa.201600218

  20. High thermal conductivity epoxy molding compound filled with a combustion synthesized AlN powder

    Journal of Applied Polymer Science

    Volume 102, Issue 5, 5 December 2006, Pages: 4734–4740, Cheng-Yu Hsieh and Shyan-Lung Chung

    Version of Record online : 28 SEP 2006, DOI: 10.1002/app.25000