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There are 16076 results for: content related to: Fabrication of p-type Zn O nanorods/n- G a N film heterojunction ultraviolet light-emitting diodes by aqueous solution method

  1. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates

    physica status solidi (a)

    Zi-Hui Zhang, Yonghui Zhang, Wengang Bi, Hilmi Volkan Demir and Xiao Wei Sun

    Version of Record online : 27 JUN 2016, DOI: 10.1002/pssa.201600281

  2. Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1033–1038, Masatomo Sumiya, Tohru Honda, Liwen Sang, Yoshitaka Nakano, Kenji Watanabe and Fumio Hasegawa

    Version of Record online : 18 FEB 2015, DOI: 10.1002/pssa.201431732

  3. Theoretical study on the effect of graded InyGa1−yN layer on p-GaN/InyGa1−yN/n-GaN p–i–n solar cell

    physica status solidi (a)

    Volume 210, Issue 12, December 2013, Pages: 2656–2661, Pramila Mahala, Abhijit Ray, Omkar Jani and Chenna Dhanavantri

    Version of Record online : 1 OCT 2013, DOI: 10.1002/pssa.201330030

  4. Al(Ga)N/GaN high electron mobility transistors on silicon

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1049–1058, Yvon Cordier

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201532070

  5. Advances in III-nitride semiconductor microdisk lasers

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 960–973, Yiyun Zhang, Xuhui Zhang, Kwai Hei Li, Yuk Fai Cheung, Cong Feng and Hoi Wai Choi

    Version of Record online : 30 MAR 2015, DOI: 10.1002/pssa.201431745

  6. Dual-acceptor doped p-ZnO:(As,Sb)/n-GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector

    physica status solidi (a)

    Volume 211, Issue 9, September 2014, Pages: 2072–2077, E. Przeździecka, A. Wierzbicka, P. Dłużewski, M. Stachowicz, R. Jakieła, K. Gościński, M. A. Pietrzyk, K. Kopalko and A. Kozanecki

    Version of Record online : 22 APR 2014, DOI: 10.1002/pssa.201300758

  7. Cuprous iodide – a p-type transparent semiconductor: history and novel applications

    physica status solidi (a)

    Volume 210, Issue 9, September 2013, Pages: 1671–1703, Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner and Holger von Wenckstern

    Version of Record online : 12 AUG 2013, DOI: 10.1002/pssa.201329349

  8. Self-aligned normally-off metal–oxide–semiconductor n++GaN/InAlN/GaN high electron mobility transistors

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1086–1090, M. Blaho, D. Gregušová, Š. Haščík, M. Jurkovič, M. Ťapajna, K. Fröhlich, J. Dérer, J. -F. Carlin, N. Grandjean and J. Kuzmík

    Version of Record online : 21 JAN 2015, DOI: 10.1002/pssa.201431588

  9. Electrodeposition of kesterite thin films for photovoltaic applications: Quo vadis?

    physica status solidi (a)

    Volume 212, Issue 1, January 2015, Pages: 88–102, D. Colombara, A. Crossay, L. Vauche, S. Jaime, M. Arasimowicz, P.-P. Grand and P. J. Dale

    Version of Record online : 3 DEC 2014, DOI: 10.1002/pssa.201431364

  10. Karl Bädeker (1877–1914) and the discovery of transparent conductive materials

    physica status solidi (a)

    Volume 212, Issue 7, July 2015, Pages: 1409–1426, Marius Grundmann

    Version of Record online : 17 APR 2015, DOI: 10.1002/pssa.201431921

  11. High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes

    physica status solidi (a)

    Jiajiang Lv, Chenju Zheng, Quan Chen, Shengjun Zhou and Sheng Liu

    Version of Record online : 1 AUG 2016, DOI: 10.1002/pssa.201600319

  12. Thermoelectric enhancement in the two-dimensional electron gas of AlGaN/GaN heterostructures

    physica status solidi (a)

    Volume 213, Issue 4, April 2016, Pages: 1088–1092, Kazuya Nagase, Shinya Takado and Ken Nakahara

    Version of Record online : 16 DEC 2015, DOI: 10.1002/pssa.201532653

  13. Self-consistent simulation of two-dimensional electron gas characteristics of a novel (InxAl1–xN/AlN) MQWs/InN/GaN heterostructure

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1263–1268, Wei Li, Quan Wang, Cuimei Wang, Haibo Yin, Junda Yan, Jiamin Gong, Baiquan Li, Xiaoliang Wang and Zhanguo Wang

    Version of Record online : 3 FEB 2016, DOI: 10.1002/pssa.201532778

  14. Polarization doping for III-nitride optoelectronics

    physica status solidi (a)

    Volume 210, Issue 7, July 2013, Pages: 1369–1376, Oleg V. Khokhlev, Kirill A. Bulashevich and Sergey Yu. Karpov

    Version of Record online : 18 MAR 2013, DOI: 10.1002/pssa.201228614

  15. Optimization of n-electrode pattern for p-side down vertical InGaN/GaN blue light emitting diodes

    physica status solidi (a)

    Volume 211, Issue 9, September 2014, Pages: 2134–2141, Sandeep Kumar, Sumitra Singh, Ashok Kumar Lunia, Suchandan Pal and C. Dhanavantri

    Version of Record online : 16 MAY 2014, DOI: 10.1002/pssa.201431066

  16. Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors

    physica status solidi (a)

    Volume 213, Issue 8, August 2016, Pages: 2203–2207, Weihang Zhang, Xiangdong Li, Jincheng Zhang, Haiqing Jiang, Xin Xu, Zhenxing Guo, Renyuan Jiang, Yu Zou, Yunlong He and Yue Hao

    Version of Record online : 4 MAR 2016, DOI: 10.1002/pssa.201532894

  17. Controlled dewetting as fabrication and patterning strategy for metal nanostructures

    physica status solidi (a)

    Volume 212, Issue 8, August 2015, Pages: 1662–1684, Francesco Ruffino and Maria Grazia Grimaldi

    Version of Record online : 11 JUN 2015, DOI: 10.1002/pssa.201431755

  18. Multilayer graphene/ITO transparent n-electrodes for high-efficiency III-nitride light-emitting diodes

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1204–1208, Tae Kyoung Kim, Seung Kyu Oh, Yu-Jung Cha, Dong Kyu Lee, Chan-Hwa Hong, Hong Kyw Choi, Yeo Jin Yoon and Joon Seop Kwak

    Version of Record online : 16 DEC 2015, DOI: 10.1002/pssa.201532788

  19. Milliwatt-class GaN-based blue vertical-cavity surface-emitting lasers fabricated by epitaxial lateral overgrowth

    physica status solidi (a)

    Volume 213, Issue 5, May 2016, Pages: 1170–1176, Tatsushi Hamaguchi, Noriyuki Fuutagawa, Shouichiro Izumi, Masahiro Murayama and Hironobu Narui

    Version of Record online : 8 JAN 2016, DOI: 10.1002/pssa.201532759

  20. Performance projection of III-nitride heterojunction nanowire tunneling field-effect transistors

    physica status solidi (a)

    Volume 213, Issue 4, April 2016, Pages: 905–908, Wenjun Li, Lina Cao, Cory Lund, Stacia Keller and Patrick Fay

    Version of Record online : 3 DEC 2015, DOI: 10.1002/pssa.201532564