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There are 7628 results for: content related to: Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

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    Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

    Chemical Vapor Deposition

    Volume 21, Issue 1-2-3, March 2015, Pages: 33–40, Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong and Edward Yi Chang

    Version of Record online : 18 DEC 2014, DOI: 10.1002/cvde.201407100

  2. Pulsed modulation doping of AlxGa1-xN (x>0.6) AlGaN epilayers for deep UV optoelectronic devices

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 408–411, Hung-Chi Chen, Iftikhar Ahmad, Bin Zhang, Antwon Coleman, Mahbuba Sultana, Vinod Adivarahan and Asif Khan

    Version of Record online : 20 FEB 2014, DOI: 10.1002/pssc.201300661

  3. High carrier concentration in high Al-composition AlGaN-channnel HEMTs

    physica status solidi (c)

    Volume 9, Issue 2, February 2012, Pages: 373–376, Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Norimasa Yafune, Keiichi Sakuno, Hirokuni Tokuda, Masaaki Kuzuhara, Kenichiro Takeda, Motoaki Iwaya and Hiroshi Amano

    Version of Record online : 17 NOV 2011, DOI: 10.1002/pssc.201100289

  4. Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1104–1109, Yusuke Takei, Masayuki Kamiya, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi Iwai

    Version of Record online : 9 FEB 2015, DOI: 10.1002/pssa.201431645

  5. Influence of growth process scheme on the properties of AlGaN/AlN/GaN heterostructures

    physica status solidi (c)

    Volume 10, Issue 3, March 2013, Pages: 306–310, Mateusz Wośko, Bogdan Paszkiewicz, Regina Paszkiewicz and Marek Tłaczała

    Version of Record online : 24 JAN 2013, DOI: 10.1002/pssc.201200708

  6. Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers

    physica status solidi (a)

    Volume 209, Issue 3, March 2012, Pages: 501–504, Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Masaki Ueno, Takao Nakamura, Kenichiro Takeda, Motoaki Iwaya, Yoshio Honda and Hiroshi Amano

    Version of Record online : 15 FEB 2012, DOI: 10.1002/pssa.201100379

  7. Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer

    physica status solidi (c)

    Volume 5, Issue 6, May 2008, Pages: 1743–1745, R. Datta, C. McAleese, P. Cherns, F. D. G. Rayment and C. J. Humphreys

    Version of Record online : 18 APR 2008, DOI: 10.1002/pssc.200778616

  8. Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 1938–1940, Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata, Kenichiro Takeda and Hiroshi Amano

    Version of Record online : 6 MAY 2010, DOI: 10.1002/pssc.200983440

  9. Strain–Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer

    Strain

    Volume 47, Issue s2, December 2011, Pages: 19–27, M. K. Öztürk, H. Altuntaş, S. Çörekçi, Y. Hongbo, S. Özçelik and E. Özbay

    Version of Record online : 10 JUN 2010, DOI: 10.1111/j.1475-1305.2009.00730.x

  10. AlGaN/GaN Nanowire Heterostructures

    Wide Band Gap Semiconductor Nanowires 2

    Jörg Teubert, Jordi Arbiol, Martin Eickhoff, Pages: 1–40, 2014

    Published Online : 8 AUG 2014, DOI: 10.1002/9781118984291.ch1

  11. Growth and characterization of AlGaN/GaN/AlGaN field effect transistors

    physica status solidi (c)

    Volume 7, Issue 10, October 2010, Pages: 2404–2407, Z. Chen, Y. Pei, R. Chu, S. Newman, D. Brown, R. Chung, S. Keller, S. P. DenBaars, S. Nakamura and U. K. Mishra

    Version of Record online : 15 JUN 2010, DOI: 10.1002/pssc.200983890

  12. Carbon-doped p-type (0001) plane AlGaN (Al = 6–55%) with high hole density

    physica status solidi (b)

    Volume 249, Issue 3, March 2012, Pages: 459–463, Hideo Kawanishi and Tatsuya Tomizawa

    Version of Record online : 9 JAN 2012, DOI: 10.1002/pssb.201100316

  13. a -plane AlN and AlGaN growth on r -plane sapphire by MOVPE

    physica status solidi (c)

    Volume 7, Issue 7-8, July 2010, Pages: 2107–2110, Reina Miyagawa, Hideto Miyake and Kazumasa Hiramatsu

    Version of Record online : 10 JUN 2010, DOI: 10.1002/pssc.200983601

  14. Temperature-dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

    physica status solidi (RRL) - Rapid Research Letters

    Volume 7, Issue 4, April 2013, Pages: 297–300, Jianping Zeng, Wei Li, Jianchang Yan, Junxi Wang, Peipei Cong, Jinmin Li, Weiying Wang, Peng Jin and Zhanguo Wang

    Version of Record online : 6 FEB 2013, DOI: 10.1002/pssr.201307004

  15. Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

    physica status solidi (a)

    Volume 208, Issue 2, February 2011, Pages: 357–376, K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher and M. A. Hein

    Version of Record online : 21 JUL 2010, DOI: 10.1002/pssa.201026343

  16. Dislocation reduction in high Al-content AlGaN films for deep ultraviolet light emitting diodes

    physica status solidi (a)

    Volume 208, Issue 7, July 2011, Pages: 1501–1503, Iftikhar Ahmad, Balakrishnan Krishnan, Bin Zhang, Qhalid Fareed, Mohamed Lachab, Joseph Dion and Asif Khan

    Version of Record online : 1 JUN 2011, DOI: 10.1002/pssa.201001104

  17. Fabrication of AlGaN multiple quantum wells on sapphire with lattice-relaxation layer

    physica status solidi (c)

    Volume 12, Issue 4-5, April 2015, Pages: 361–364, Kazuhiro Nakahama, Fumitsugu Fukuyo, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida and Yuji Kobayashi

    Version of Record online : 18 MAR 2015, DOI: 10.1002/pssc.201400201

  18. Al(Ga)N/GaN high electron mobility transistors on silicon

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1049–1058, Yvon Cordier

    Version of Record online : 17 MAR 2015, DOI: 10.1002/pssa.201532070

  19. E-beam pumped mid-UV sources based on MBE-grown AlGaN MQW

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1011–1016, S. V. Ivanov, V. N. Jmerik, D. V. Nechaev, V. I. Kozlovsky and M. D. Tiberi

    Version of Record online : 19 FEB 2015, DOI: 10.1002/pssa.201431756

  20. The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

    physica status solidi (b)

    Volume 252, Issue 9, September 2015, Pages: 1960–1965, S. Ardali, G. Atmaca, S. B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev and E. Tiras

    Version of Record online : 28 APR 2015, DOI: 10.1002/pssb.201552135