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There are 830036 results for: content related to: Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N 2 environment

  1. Mg doping of 3D semipolar InGaN/GaN-based light emitting diodes

    physica status solidi (a)

    Volume 211, Issue 11, November 2014, Pages: 2645–2649, Junjun Wang, Yumin Gao, Saiful Alam and Ferdinand Scholz

    Version of Record online : 14 AUG 2014, DOI: 10.1002/pssa.201431369

  2. Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1109–1115, Yingda Chen, Hualong Wu, Guanglong Yue, Zimin Chen, Zhiyuan Zheng, Zhisheng Wu, Gang Wang and Hao Jiang

    Version of Record online : 9 DEC 2014, DOI: 10.1002/pssb.201451489

  3. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates

    physica status solidi (a)

    Volume 213, Issue 12, December 2016, Pages: 3078–3102, Zi-Hui Zhang, Yonghui Zhang, Wengang Bi, Hilmi Volkan Demir and Xiao Wei Sun

    Version of Record online : 27 JUN 2016, DOI: 10.1002/pssa.201600281

  4. Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

    Small

    Volume 10, Issue 9, May 14, 2014, Pages: 1668–1686, Chong Geng, Tongbo Wei, Xiaoqing Wang, Dezhong Shen, Zhibiao Hao and Qingfeng Yan

    Version of Record online : 14 FEB 2014, DOI: 10.1002/smll.201303599

  5. Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate

    physica status solidi (a)

    Volume 212, Issue 5, May 2015, Pages: 1033–1038, Masatomo Sumiya, Tohru Honda, Liwen Sang, Yoshitaka Nakano, Kenji Watanabe and Fumio Hasegawa

    Version of Record online : 18 FEB 2015, DOI: 10.1002/pssa.201431732

  6. Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells

    physica status solidi (a)

    Volume 214, Issue 4, April 2017, Saiful Alam, Suresh Sundaram, Helge Haas, Xin Li, Youssef El Gmili, Miryam E. Jamroz, Ivan C. Robin, Paul L. Voss, Jean-Paul Salvestrini and Abdallah Ougazzaden

    Version of Record online : 17 NOV 2016, DOI: 10.1002/pssa.201600496

  7. Nitrogen ion implantation isolation technology for normally-off GaN MISFETs on p-GaN substrate

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 914–917, Hayao Kasai, Hiroki Ogawa, Tomoaki Nishimura and Tohru Nakamura

    Version of Record online : 24 JAN 2014, DOI: 10.1002/pssc.201300436

  8. Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells

    physica status solidi (a)

    Volume 211, Issue 9, September 2014, Pages: 2157–2160, J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, L. C. Le, X. G. He, X. J. Li and H. Yang

    Version of Record online : 22 MAY 2014, DOI: 10.1002/pssa.201431086

  9. Variable-Color Light-Emitting Diodes Using GaN Microdonut arrays

    Advanced Materials

    Volume 26, Issue 19, May 21, 2014, Pages: 3019–3023, Youngbin Tchoe, Janghyun Jo, Miyoung Kim, Jaehyuk Heo, Geonwook Yoo, Cheolsoo Sone and Gyu-Chul Yi

    Version of Record online : 22 FEB 2014, DOI: 10.1002/adma.201305684

  10. Large-Scale Horizontally Aligned ZnO Microrod Arrays with Controlled Orientation, Periodic Distribution as Building Blocks for Chip-in Piezo-Phototronic LEDs

    Small

    Volume 11, Issue 4, January 27, 2015, Pages: 438–445, Zhen Guo, Haiwen Li, Lianqun Zhou, Dongxu Zhao, Yihui Wu, Zhiqiang Zhang, Wei Zhang, Chuanyu Li and Jia Yao

    Version of Record online : 15 SEP 2014, DOI: 10.1002/smll.201402151

  11. Highly transparent conductive Ag/Ga2O3 electrode for near-ultraviolet light-emitting diodes

    physica status solidi (a)

    Volume 211, Issue 8, August 2014, Pages: 1760–1763, Kie Young Woo, Jae Hoon Lee, Kyeong Heon Kim, Su Jin Kim and Tae Geun Kim

    Version of Record online : 20 MAR 2014, DOI: 10.1002/pssa.201330495

  12. Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed

    physica status solidi (b)

    Volume 252, Issue 5, May 2015, Pages: 1172–1179, Tomasz Sochacki, Mikolaj Amilusik, Michal Fijalkowski, Malgorzata Iwinska, Boleslaw Lucznik, Jan L. Weyher, Grzegorz Kamler, Robert Kucharski, Izabella Grzegory and Michal Bockowski

    Version of Record online : 16 DEC 2014, DOI: 10.1002/pssb.201451604

  13. Temperature-dependent ac current-voltage-capacitance characteristics of GaN-based light-emitting diodes under high forward bias

    physica status solidi (c)

    Volume 11, Issue 3-4, April 2014, Pages: 714–717, Wei Yang, Ding Li, Juan He, Cunda Wang and Xiaodong Hu

    Version of Record online : 19 MAR 2014, DOI: 10.1002/pssc.201300434

  14. Optimization of n-electrode pattern for p-side down vertical InGaN/GaN blue light emitting diodes

    physica status solidi (a)

    Volume 211, Issue 9, September 2014, Pages: 2134–2141, Sandeep Kumar, Sumitra Singh, Ashok Kumar Lunia, Suchandan Pal and C. Dhanavantri

    Version of Record online : 16 MAY 2014, DOI: 10.1002/pssa.201431066

  15. Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer

    physica status solidi (a)

    Volume 211, Issue 4, April 2014, Pages: 744–747, H. Fang, M. Katagiri, H. Miyake, K. Hiramatsu, H. Oku, H. Asamura and K. Kawamura

    Version of Record online : 10 MAR 2014, DOI: 10.1002/pssa.201300443

  16. Generation of dislocation clusters by glide m-planes in semipolar GaN layers

    physica status solidi (a)

    Volume 211, Issue 4, April 2014, Pages: 736–739, N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn and H. T. Grahn

    Version of Record online : 20 MAR 2014, DOI: 10.1002/pssa.201300465

  17. Enhancement of optical performance of near-UV nitride-based light emitting diodes with different aluminum composition barrier structure

    physica status solidi (a)

    Volume 211, Issue 8, August 2014, Pages: 1769–1772, C. K. Wang, Y. Z. Chiou, C. C. Hsiang, D. H. Lee, W. Y. Yan, W. S. Chen, C. M. Cheng, K. H. Chen, J. J. Tang and J. Lee

    Version of Record online : 19 FEB 2014, DOI: 10.1002/pssa.201330586

  18. Theoretical description of charge transport in disordered organic semiconductors

    physica status solidi (b)

    Volume 251, Issue 3, March 2014, Pages: 487–525, S. D. Baranovskii

    Version of Record online : 25 FEB 2014, DOI: 10.1002/pssb.201350339

  19. Dual-acceptor doped p-ZnO:(As,Sb)/n-GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector

    physica status solidi (a)

    Volume 211, Issue 9, September 2014, Pages: 2072–2077, E. Przeździecka, A. Wierzbicka, P. Dłużewski, M. Stachowicz, R. Jakieła, K. Gościński, M. A. Pietrzyk, K. Kopalko and A. Kozanecki

    Version of Record online : 22 APR 2014, DOI: 10.1002/pssa.201300758

  20. THz intersubband transitions in AlGaN/GaN multi-quantum-wells

    physica status solidi (a)

    Volume 211, Issue 4, April 2014, Pages: 761–764, Mark Beeler, Catherine Bougerol, Edith Bellet-Amalaric and Eva Monroy

    Version of Record online : 14 FEB 2014, DOI: 10.1002/pssa.201300431